知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

14 records (took 0.013 seconds)

    METHOD FOR MAKING A PERPENDICULAR MAGNETIC RECORDING WRITE HEAD WITH WRITE POLE HAVING THIN SIDE GAPS AND THICKER LEADING GAP
    7.
    发明申请
    METHOD FOR MAKING A PERPENDICULAR MAGNETIC RECORDING WRITE HEAD WITH WRITE POLE HAVING THIN SIDE GAPS AND THICKER LEADING GAP 有权
    用于制作具有薄边和厚度导线缝隙的写入磁头的全磁性记录写头的方法

    公开(公告)号：US20170053668A1

    公开(公告)日：2017-02-23

    申请号：US14827705

    申请日：2015-08-17

    Applicant: HGST Netherlands B.V.

    Inventor： April D. Hixson-Goldsmith ,  Ning Shi ,  Kyusik Shin ,  Suping Song ,  Brian R. York

    IPC: G11B5/31 ,  G11B5/127

    CPC classification number: G11B5/3163 ,  G11B5/1278 ,  G11B5/232 ,  G11B5/3116 ,  G11B5/315

    Abstract: Ionized physical vapor deposition (IPVD) is used to form a magnetic recording disk drive write head main pole with thin side gap layers and a thicker leading gap layer. A metal or metal alloy is formed by IPVD in a trench with a bottom and outwardly sloping sidewalls. An optional Ru seed layer is deposited on the metal or metal alloy. This is followed by atomic layer deposition (ALD) of a Ru smoothing layer. If the IPVD results in metal or metal alloy side gap layers with a rough surface, the ALD process is modified, resulting in a smooth Ru smoothing layer that does not replicate the rough surface of the side gap layers.

    Abstract translation: 电离物理气相沉积（IPVD）用于形成磁记录盘驱动写头主极，具有薄侧间隙层和较厚的前导间隙层。 通过IPVD在具有底部和向外倾斜侧壁的沟槽中形成金属或金属合金。 可选的Ru籽晶层沉积在金属或金属合金上。 这之后是Ru平滑层的原子层沉积（ALD）。 如果IPVD导致具有粗糙表面的金属或金属合金侧间隙层，则ALD工艺被改变，导致不平滑侧面间隙层的粗糙表面的光滑的Ru平滑层。

    TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER
    8.
    发明申请
    TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER 审中-公开
    具有软偏移层的隧道磁传感器（TMR）传感器

    公开(公告)号：US20160163338A1

    公开(公告)日：2016-06-09

    申请号：US14559856

    申请日：2014-12-03

    Applicant: HGST Netherlands B.V.

    Inventor： Kuok S. Ho ,  Nian Ji ,  Quang Le ,  Ying Li ,  Simon H. Liao ,  Guangli Liu ,  Xiaoyong Liu ,  Suping Song ,  Shuxia Wang ,  Hualiang Yu

    IPC: G11B5/39 ,  G11B5/127

    CPC classification number: G11B5/3932 ,  G11B5/3909 ,  G11B5/3912

    Abstract: An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (AFM), a first antiparallel magnetic layer (AP1 ) positioned above the AFM layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a non-magnetic layer positioned above the AP1 in the first direction, a second antiparallel magnetic layer (AP2) positioned above the non-magnetic layer in the first direction, a harrier layer positioned above the AP2 in the first direction, and a free layer positioned above the barrier layer in the first direction. A soft bias layer is positioned behind at least a portion of the free layer in an element height direction normal to the media-facing surface, the soft bias layer including a soft magnetic material configured to compensate for a magnetic coupling of the free layer with the AP2.

    Abstract translation: 根据一个实施例的装置包括读取传感器。 读取传感器具有反铁磁层（AFM），位于AFM层上方的第一反向磁性层（AP1），沿着面向介质的表面定向并垂直于轨道宽度方向的第一方向，位于上方的非磁性层 在第一方向上的AP1，位于第一方向上的非磁性层上方的第二反并联磁性层（AP2），位于第一方向上的AP2上方的吸收层和位于第一方向上的阻挡层上方的自由层 第一个方向 柔性偏置层位于垂直于面向媒体的表面的元件高度方向上位于自由层的至少一部分之后，软偏置层包括软磁材料，其被配置为补偿自由层与 AP2。

    MULTIPLE-INPUT-MULTIPLE-OUTPUT SENSOR DESIGNS FOR MAGNETIC APPLICATIONS
    9.
    发明申请
    MULTIPLE-INPUT-MULTIPLE-OUTPUT SENSOR DESIGNS FOR MAGNETIC APPLICATIONS 审中-公开
    用于磁性应用的多输入多输出传感器设计

    公开(公告)号：US20160055868A1

    公开(公告)日：2016-02-25

    申请号：US14465748

    申请日：2014-08-21

    Applicant: HGST NETHERLANDS B.V.

    Inventor： Zheng Gao ,  Lijie Guan ,  Kuok S. Ho ,  Suping Song ,  Shuxia Wang

    IPC: G11B5/39 ,  G01R1/18 ,  G01R33/09

    CPC classification number: G11B5/3912 ,  G01R1/18 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/3948 ,  G11B5/397 ,  G11B5/4886 ,  G11B2005/3996

    Abstract: According to one embodiment, a system includes a leading magnetic shield, a first sensor structure above the leading magnetic shield, a first middle magnetic shield above the first sensor structure, a nonmagnetic spacer above the first middle magnetic shield, a second middle magnetic shield above the nonmagnetic spacer, a second sensor structure above the second middle magnetic shield, and a trailing magnetic shield above the second sensor structure. Other systems, methods, and computer program products are described in additional embodiments.

    Abstract translation: 根据一个实施例，系统包括前导磁屏蔽，位于导磁屏蔽之上的第一传感器结构，位于第一传感器结构之上的第一中间磁屏蔽，位于第一中间磁屏蔽之上的非磁性隔离物，位于第一中间磁屏蔽之上的第二中间磁屏蔽 非磁性间隔件，位于第二中间磁屏蔽之上的第二传感器结构，以及位于第二传感器结构之上的尾部磁屏蔽。 在另外的实施例中描述了其他系统，方法和计算机程序产品。

    Reader sensor having a recessed antiferromagnetic (AFM) pinning layer
    10.
    发明授权
    Reader sensor having a recessed antiferromagnetic (AFM) pinning layer 有权
    读取器传感器具有凹入的反铁磁（AFM）钉扎层

    公开(公告)号：US09007729B1

    公开(公告)日：2015-04-14

    申请号：US14265187

    申请日：2014-04-29

    Applicant: HGST Netherlands B.V.

    Inventor： Kuok S. Ho ,  Suping Song

    IPC: G11B5/39

    CPC classification number: G11B5/39 ,  G11B5/3929

    Abstract: In one embodiment, a read sensor includes an antiferromagnetic (AFM) pinning layer, the AFM pinning layer being recessed from a media-facing surface in an element height direction to a first height, a first antiparallel pinned multilayer (AP1) positioned above the AFM pinning layer and extending beyond the first height to the media-facing surface, a second antiparallel pinned layer (AP2) positioned above the AP1 and extending beyond the first height to the media-facing surface, and a free layer positioned at the media-facing surface above the AP2 and extending from the media-facing surface in the element height direction to a second height, wherein the element height direction is perpendicular to the media-facing surface, wherein the AP1 and the AP2 are not recessed from the media-facing surface, and wherein the AFM, the AP1, and the AP2 extend beyond the free layer in the element height direction beyond the second height.

    Abstract translation: 在一个实施例中，读取传感器包括反铁磁（AFM）钉扎层，AFM钉扎层从元件高度方向上的面向介质的表面凹陷到第一高度，位于AFM上方的第一反平行钉扎多层（AP1） 钉扎层并延伸超过第一高度到面向介质的表面，位于AP1上方并延伸超过第一高度并延伸到面向介质的表面的第二反平行钉扎层（AP2），以及位于介质面向 表面在AP2上方并且在元件高度方向上从面向媒体的表面延伸到第二高度，其中元件高度方向垂直于面向介质的表面，其中AP1和AP2不从介质面向 表面，并且其中AFM，AP1和AP2延伸超过元件高度方向上的自由层超过第二高度。

Patent Agency Ranking