TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER
    1.
    发明申请
    TUNNELING MAGNETORESISTIVE (TMR) SENSOR WITH A SOFT BIAS LAYER 审中-公开
    具有软偏移层的隧道磁传感器(TMR)传感器

    公开(公告)号:US20160163338A1

    公开(公告)日:2016-06-09

    申请号:US14559856

    申请日:2014-12-03

    CPC classification number: G11B5/3932 G11B5/3909 G11B5/3912

    Abstract: An apparatus according to one embodiment includes a read sensor. The read sensor has an antiferromagnetic layer (AFM), a first antiparallel magnetic layer (AP1 ) positioned above the AFM layer in a first direction oriented along a media-facing surface and perpendicular to a track width direction, a non-magnetic layer positioned above the AP1 in the first direction, a second antiparallel magnetic layer (AP2) positioned above the non-magnetic layer in the first direction, a harrier layer positioned above the AP2 in the first direction, and a free layer positioned above the barrier layer in the first direction. A soft bias layer is positioned behind at least a portion of the free layer in an element height direction normal to the media-facing surface, the soft bias layer including a soft magnetic material configured to compensate for a magnetic coupling of the free layer with the AP2.

    Abstract translation: 根据一个实施例的装置包括读取传感器。 读取传感器具有反铁磁层(AFM),位于AFM层上方的第一反向磁性层(AP1),沿着面向介质的表面定向并垂直于轨道宽度方向的第一方向,位于上方的非磁性层 在第一方向上的AP1,位于第一方向上的非磁性层上方的第二反并联磁性层(AP2),位于第一方向上的AP2上方的吸收层和位于第一方向上的阻挡层上方的自由层 第一个方向 柔性偏置层位于垂直于面向媒体的表面的元件高度方向上位于自由层的至少一部分之后,软偏置层包括软磁材料,其被配置为补偿自由层与 AP2。

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