公开(公告)号：US20040051042A1

公开(公告)日：2004-03-18

申请号：US10655904

申请日：2003-09-05

Applicant: HEETRONIX

Inventor： James D. Parsons

IPC: G01J005/00

CPC classification number: H01L31/0256 ,  H01L31/0312 ,  H01L31/036 ,  H01L31/09

Abstract: SiC at least about 400 micrometers thick, and preferably within the range of about 400-2,000 micrometers thick, is employed to detect electromagnetic radiation having a wavelength less than about 10 micrometers via an acoustic absorption mechanism. The SiC body preferably has a non-dopant impurity level low enough that it does not interfere with a single crystal structure for the SiC, and an approximately uniform thickness with an approximately flat radiation receiving surface.

Abstract translation: 采用至少约400微米厚，优选在约400-2,000微米厚范围内的SiC通过声吸收机制检测波长小于约10微米的电磁辐射。 SiC体优选具有足够低的非掺杂剂杂质水平，使得其不干扰用于SiC的单晶结构，并且具有近似均匀的具有近似平坦的辐射接收表面的厚度。

公开(公告)号：US20040169249A1

公开(公告)日：2004-09-02

申请号：US10753476

申请日：2004-01-07

Applicant: HEETRONIX

Inventor： James D. Parsons

IPC: H01L021/00

CPC classification number: G01K7/16 ,  H01C7/022

Abstract: A high temperature hybrid-circuit structure includes a temperature sensitive device which comprises SiC, AlN and/or AlxGa1-xN(x>0.69) connected via electrodes to an electrically conductive mounting layer that is physically bonded to an AlN die. The die, temperature sensitive device and mounting layer, which can be a thin film of W, WC or W2C less than 10 micrometers thick, have temperature coefficients of expansion within 1.06 of each other. The mounting layer can consist entirely of a W, WC or W2C adhesive layer, or an adhesive layer with an overlay metallization having a thermal coefficient of expansion not greater than about 3.5 times that of the adhesive layer. Applications include temperature sensors, pressure sensors, chemical sensors and high temperature and high power electronic circuits. Without the mounting layer, a thin film piezoelectric layer of SiC, AlN and/or AlxGa1-xN(x>0.69), less than 10 micrometers thick, can be secured to the die.

Abstract translation: 高温混合电路结构包括温度敏感器件，其包括通过电极连接到物理地结合到AlN管芯的导电安装层的SiC，AlN和/或Al x Ga 1-x N（x> 0.69）。 可以是小于10微米厚的W，WC或W2C薄膜的管芯，温度敏感器件和安装层具有彼此的1.06之内的温度系数。 安装层可以完全由W，WC或W2C粘合剂层组成，或具有覆盖金属化层的粘合剂层，其热膨胀系数不大于粘合层的约3.5倍。 应用包括温度传感器，压力传感器，化学传感器和高温高功率电子电路。 没有安装层，可以将小于10微米厚的SiC，AlN和/或Al x Ga 1-x N（x> 0.69）的薄膜压电层固定到模具。

公开(公告)号：US20040056321A1

公开(公告)日：2004-03-25

申请号：US10608737

申请日：2003-06-27

Applicant: HEETRONIX

Inventor： James D. Parsons

IPC: H01L029/82

CPC classification number: G01F1/692 ,  G01F23/248 ,  G01K7/18 ,  G01K7/183 ,  H01C3/04 ,  H01C3/12 ,  H01C7/006 ,  H01C17/075 ,  H01C17/12 ,  H05B3/265 ,  H05B2203/003

Abstract: A sensor system has an AlN substrate, a W layer on the substrate, a signal source adapted to apply an electrical actuating signal to the W layer, and a sensor adapted to sense the response of the W layer. The W layer can comprise a thin film, with various types of optional protective layers over the film. Applications include sensing temperature, fluid flow rates, fluid levels, pressure and chemical environments. For a planar heater, the W layer comprises a plurality of conductive strands distributed on the substrate, with the strands generally parallel and serpentine shaped for a rectangular substrate, and extending along respective lines of longitude that merge at opposite poles of the substrate for a circular substrate.

Abstract translation: 传感器系统具有AlN衬底，衬底上的W层，适于向W层施加电致动信号的信号源以及适于感测W层的响应的传感器。 W层可以包括薄膜，在膜上具有各种类型的可选保护层。 应用包括感测温度，流体流速，流体水平，压力和化学环境。 对于平面加热器，W层包括分布在基板上的多个导电股线，其中股线基本上平行于蛇形形状，用于矩形基板，并且沿着经线的相应线延伸，在基板的相对极处合并为圆形 基质。

公开(公告)号：US20040035201A1

公开(公告)日：2004-02-26

申请号：US10608731

申请日：2003-06-27

Applicant: HEETRONIX

Inventor： Craig A. Vincze ,  James Gibson ,  James D. Parsons ,  Thomas E. Fehlman

IPC: G01F001/68

CPC classification number: G01F1/692 ,  G01F1/6845 ,  G01F1/6847 ,  G01F5/00

Abstract: A mass flow meter employs discrete chip-type temperature sensors to sense a fluid flow rate. The sensor can be a semiconductor chip such as SiC or silicon, or thin film tungsten on an AlN substrate. The sensors can be distributed symmetrically with respect to the conduit through which the fluid flows, and can be connected in a four-sensor bridge circuit for accurate flow rate monitoring. An output from the mass flow meter can be used to control the fluid flow.

Abstract translation: 质量流量计采用分立的片式温度传感器来感测流体流速。 该传感器可以是诸如SiC或硅的半导体芯片，或AlN衬底上的薄膜钨。 传感器可以相对于流体流过的管道对称地分布，并且可以连接在四传感器桥接电路中以进行精确的流量监测。 可以使用质量流量计的输出来控制流体流量。