Abstract:
A cell sample measurement apparatus includes a sample stage for placing an object cell sample containing a plurality of cells cultured on a culture dish, an evaluation light irradiation unit for irradiating N irradiation regions set by dividing a culture region in the object cell sample with evaluation light having a wavelength in a mid-infrared region with irradiation amounts different from each other, a dead cell number measurement unit for measuring a dead cell number generated according to the irradiation amount of the evaluation light in each of the N irradiation regions, and a culture state analysis unit for obtaining, for the object cell sample, an object correlation between the irradiation amount of the evaluation light and the dead cell number for the N irradiation regions serving as an index of evaluation of a culture state of the object cell sample.
Abstract:
An optical element includes a laminate including a first refractive index layer and a second refractive index layer having different refractive index for terahertz waves, wherein the laminate includes a pair layer group in which a plurality of pair layers including the first refractive index layer and the second refractive index layer are laminated, wherein the thickness of the first refractive index layer and the thickness of the second refractive index layer are each smaller than a wavelength of the terahertz waves, and wherein each of the pair layers has a predetermined effective refractive index for the terahertz waves depending on a thickness ratio between the first refractive index layer and the second refractive index layer.
Abstract:
The optical element for a low frequency band includes a substrate including a first main face and a second main face, the substrate having birefringence, and an antireflection film located on the first main face, wherein the low frequency band is lower than a reststrahlen band of the antireflection film, wherein an absolute value of a difference between a first refractive index and a second refractive index of the substrate in the low frequency band is 0.2 or more, and wherein a thickness of the substrate is 15 μm or more and 4000 μm or less.
Abstract:
In an optical analysis device, a terahertz wave generation module includes a terahertz wave generation unit, and a polarization switching unit that periodically switches a polarization state of a terahertz wave between a first polarization state and a second polarization state that are different from each other on the basis of a frequency signal. An electric field vector measurement unit detects a first electric field vector of a terahertz wave in a first polarization state and a second electric field vector of the terahertz wave in a second polarization state by referring to a frequency signal. An optical parameter analysis unit determines an optical parameter of a measurement target from an intersection between first analysis data based on spectral data obtained by performing Fourier transformation on a product of the first electric field vector and a rotation matrix and second analysis data based on spectral data obtained by performing Fourier transformation on a product of the second electric field vector and the rotation matrix.
Abstract:
A total reflection spectroscopic measurement device includes a terahertz wave generation unit, an internal total reflection prism, a detection unit configured to detect the terahertz wave, an electric field vector measurement unit configured to measure an electric field vector of the terahertz wave, and an analysis unit configured to acquire information about an optical constant of the object to be measured. Proportions of S polarization component and P polarization component of the terahertz wave are constant. The analysis unit acquires the information about the optical constant on the basis of a ratio between S polarization component and P polarization component of the measured electric field vector when the object is not arranged on the total reflection surface and a ratio between S polarization component and P polarization component of the measured electric field vector when the object is arranged on the total reflection surface.
Abstract:
In this electric field vector detection method, an electro-optic crystal, where a (111) surface of an optical isotropic medium is cut out, is used as a terahertz wave detection element. The method includes: causing polarization of probe light of ultrashort pulsed light to be circular polarization; allowing the probe light having circular polarization to enter the terahertz wave detection element and probing the terahertz wave; modulating the probe light, having probed the terahertz wave, by a rotating analyzer and detecting the modulated probe light by a photodetector; performing lock-in detection of a detection signal from the photodetector by a lock-in detector using a frequency based on a rotational frequency of the rotating analyzer as a reference signal; and detecting an electric field vector of the terahertz wave based on a detection signal from the lock-in detector.
Abstract:
A spectroscopic measurement device includes: a light source unit configured to output pump light and probe light; a terahertz wave generation unit configured to generate a terahertz wave by the input of the pump light; a terahertz wave detection unit to which the terahertz wave and the probe light are input and configured to modulate the probe light based on a refractive index that changes due to an electro-optical effect according to the input of the terahertz wave; and a light detection unit configured to detect the probe light modulated by the terahertz wave detection unit. A main body unit is configured to include the light source unit and the light detection unit. A measurement unit is configured to include the terahertz wave generation unit and the terahertz wave detection unit. The main body unit and the measurement unit are optically connected to each other by a polarization maintaining fiber.
Abstract:
An optical kit includes a base including a main surface; and a holding unit provided on the main surface to hold an optical system. The holding unit includes a lens holding unit that holds a lens, a reflector holding unit that holds a corner reflector, a first aperture member holding unit that holds a first aperture member, a second aperture member holding unit that holds a second aperture member, and a third aperture member holding unit that holds a third aperture member. The reflector holding unit includes a first mechanism that holds an entirety of the corner reflector so as to be rotatable along the main surface, and a second mechanism configured to adjust an optical axis of a diffracted light in each of a reflective diffraction grating and a mirror.
Abstract:
An optical measurement device includes a light source configured to output a terahertz wave and coaxial light having a wavelength different from the wavelength of the terahertz wave, coaxially with the terahertz wave; an intensity modulation unit configured to perform intensity modulation of at least the terahertz wave of the terahertz wave and the coaxial light in a predetermined modulation frequency; and a light detection unit configured to synchronously detects each of the terahertz wave and the coaxial light which have acted on a measurement subject via the intensity modulation unit based on the modulation frequency.
Abstract:
A wavelength conversion element includes a crystal having a periodically poled structure in which polarization is inverted with an inversion period Λ along a z-axis which is an input axis of a light pulse. The wavelength conversion element is configured to generate an output light pulse converted to have an output frequency f(x) corresponding to the inversion period Λ(x) at each position x by change of the inversion period Λ according to the position x, and when a target frequency linearly changing with the position x is set to fT(x)=b+ax, a frequency width of the output frequency is set to δf(x), and the output frequency is set to f(x)=fT(x)+α(x), the output frequency is set to coincide with the target frequency within a range satisfying a condition |α(x)|≦δf(x).