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公开(公告)号:US20150097156A1
公开(公告)日:2015-04-09
申请号:US14390839
申请日:2013-05-10
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Kazutoshi Nakajima , Minoru Niigaki , Toru Hirohata , Hiroyuki Yamashita , Wataru Akahori , Kazuue Fujita , Kazunori Tanaka
IPC: H01L31/0232 , H01L31/09
CPC classification number: H01L31/02327 , B82Y20/00 , H01L31/035236 , H01L31/09 , H01L31/101 , H01L31/1035
Abstract: A photodetector 1A comprises an optical element 10, having a structure including first regions and second regions periodically arranged with respect to the first regions along a plane perpendicular to a predetermined direction, for generating an electric field component in the predetermined direction when light is incident thereon along the predetermined direction; and a semiconductor multilayer body 4 having a quantum cascade structure, arranged on the other side opposite from one side in the predetermined direction with respect to the optical element, for producing a current according to the electric field component in the predetermined direction generated by the optical element 10; while the quantum cascade structure includes an active region 4b for exciting an electron and an injector region 4c for transporting the electron, the active region 4b being formed on the outermost surface on the one side of the injector region 4c in the quantum cascade structure.
Abstract translation: 光电检测器1A包括光学元件10,其具有包括第一区域和第二区域的结构,所述第一区域和第二区域沿着垂直于预定方向的平面相对于第一区域周期性地布置,以在光入射时沿着预定方向产生电场分量 沿预定方向; 以及具有量子级联结构的半导体层叠体4,其相对于光学元件配置在与预定方向的一侧相反的另一侧,用于根据由光学器件产生的预定方向上的电场分量产生电流 元素10; 而量子级联结构包括用于激发电子的有源区域4b和用于传输电子的注入区域4c,有源区域4b形成在量子级联结构中的注入区域4c一侧的最外表面上。
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公开(公告)号:US20150053922A1
公开(公告)日:2015-02-26
申请号:US14390842
申请日:2013-05-10
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Kazutoshi Nakajima , Masamichi Yamanishi , Kazuue Fujita , Minoru Niigaki , Toru Hirohata , Hiroyuki Yamashita , Wataru Akahori
IPC: H01L31/0216 , H01L31/0232 , H01L31/0352
CPC classification number: H01L31/02164 , B82Y20/00 , H01L31/02327 , H01L31/035209 , H01L31/035236 , H01L31/101 , H01L31/1035
Abstract: A photodetector 1A comprises an optical element 10, having a structure including first regions and second regions periodically arranged with respect to the first regions along a plane perpendicular to a predetermined direction, for generating an electric field component in the predetermined direction when light is incident thereon along the predetermined direction; arid a semiconductor multilayer body 4 having a quantum cascade structure, arranged on the other side opposite from one side in the predetermined direction with respect to the optical element, for producing a current according to the electric field component in the predetermined direction generated by the optical element 10; while the quantum cascade structure includes an active region 4b having a first upper quantum level and a second upper quantum level lower than the first upper quantum level, and an injector region 4c for transporting an electron excited by the active region 4b.
Abstract translation: 光电检测器1A包括光学元件10,其具有包括第一区域和第二区域的结构,所述第一区域和第二区域沿着垂直于预定方向的平面相对于第一区域周期性地布置,以在光入射时沿着预定方向产生电场分量 沿预定方向; 以及具有量子级联结构的半导体多层体4,其相对于光学元件配置在与预定方向的一侧相反的另一侧,用于根据由光学元件产生的预定方向上的电场分量产生电流 元素10; 而量子级联结构包括具有第一上量子级和低于第一上量子级的第二上量子级的有源区4b和用于传输由有源区4b激发的电子的注入区4c。
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公开(公告)号:US08853809B2
公开(公告)日:2014-10-07
申请号:US13888656
申请日:2013-05-07
Applicant: Hamamatsu Photonics K.K.
Inventor: Kazutoshi Nakajima , Toru Hirohata , Wataru Aka-Hori , Kazunori Tanaka , Kazuue Fujita
IPC: H01L31/0232 , G02B1/00
CPC classification number: H01L31/02327 , G02B1/005
Abstract: An optical element 10 for transmitting light therethrough along a predetermined direction and modulating the light comprises a structure 11 having a first region R1 and a second region R2 periodically arranged with respect to the first region R1 along a plane perpendicular to the predetermined direction, the first and second regions R1, R2 having respective refractive indexes different from each other, and properties of transmitting the light therethrough.
Abstract translation: 用于沿着预定方向透射光并调制光的光学元件10包括具有第一区域R1和第二区域R2的结构11,第一区域R1和第二区域R2沿着垂直于预定方向的平面相对于第一区域R1周期性地布置, 和具有各自折射率彼此不同的第二区域R1,R2以及透射光的性质。
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公开(公告)号:US10784393B2
公开(公告)日:2020-09-22
申请号:US16100457
申请日:2018-08-10
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Hiroyasu Fujiwara , Wei Dong , Kazutoshi Nakajima , Shohei Hayashi
IPC: H01L31/08 , H01L31/02 , H01L31/0352 , H01L31/07 , H01L31/10 , H01L31/108 , H01L31/101 , H01L31/0232 , H01L31/0224
Abstract: A photodetection element is a photodetection element having an incidence surface for light on a back surface of a semiconductor layer, and includes a periodic nano-concave/convex structure provided on a front surface of the semiconductor layer and having convex portions and concave portions constituting a longitudinal resonator and a transverse resonator for the light incident from the incidence surface, the periodic nano-concave/convex structure converting the light into surface plasmons, and a metal film provided to cover the periodic nano-concave/convex structure, a height and an arrangement pitch of the convex portions in the periodic nano-concave/convex structure are set such that a resonance wavelength of the longitudinal resonator and a resonance wavelength of the transverse resonator match, and a thickness of the metal film is equal to or greater than 20 nm.
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公开(公告)号:US10686094B2
公开(公告)日:2020-06-16
申请号:US16114360
申请日:2018-08-28
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Wei Dong , Hiroyasu Fujiwara , Kazutoshi Nakajima
IPC: H01L31/108 , H01L31/0232 , H01L31/0224 , G02B6/122 , H01L31/0352 , H01L31/0236 , G02B6/12
Abstract: A photodetection element includes a semiconductor layer having, on one surface side, a periodic concave/convex structure that includes periodic convex portions and concave portions and converts light into surface plasmon, and a metal film provided on the one surface side of the semiconductor layer in correspondence to the periodic concave/convex structure, and in the periodic concave/convex structure, a Schottky junction portion that has a Schottky junction with the metal film is provided on a base end side of the convex portion, and a non-Schottky junction portion that does not have a Schottky junction with the metal film is provided on a distal end side of the convex portion.
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公开(公告)号:US09368661B2
公开(公告)日:2016-06-14
申请号:US13899940
申请日:2013-05-22
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor: Kazutoshi Nakajima , Toru Hirohata , Minoru Niigaki , Wataru Akahori , Kazuue Fujita
IPC: H01L27/14 , H01L31/0352 , H01L27/144 , H01L31/09 , B82Y20/00 , H01L27/146
CPC classification number: H01L31/0352 , B82Y20/00 , H01L27/1446 , H01L27/14649 , H01L31/035236 , H01L31/09
Abstract: A photodetector 1A comprises a multilayer structure 3 having a first layer 4 constituted by first metal or first semiconductor, a semiconductor structure layer 5 mounted on the first layer 4 and adapted to excite an electron by plasmon resonance, and a second layer 6 mounted on the semiconductor structure layer 5 and constituted by second metal or second semiconductor.
Abstract translation: 光电检测器1A包括具有由第一金属或第一半导体构成的第一层4的多层结构3,安装在第一层4上并适于通过等离子体共振激发电子的半导体结构层5和安装在第一层上的第二层6 半导体结构层5,由第二金属或第二半导体构成。
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