公开(公告)号：US09368661B2

公开(公告)日：2016-06-14

申请号：US13899940

申请日：2013-05-22

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi Nakajima ,  Toru Hirohata ,  Minoru Niigaki ,  Wataru Akahori ,  Kazuue Fujita

IPC: H01L27/14 ,  H01L31/0352 ,  H01L27/144 ,  H01L31/09 ,  B82Y20/00 ,  H01L27/146

CPC classification number: H01L31/0352 ,  B82Y20/00 ,  H01L27/1446 ,  H01L27/14649 ,  H01L31/035236 ,  H01L31/09

Abstract: A photodetector 1A comprises a multilayer structure 3 having a first layer 4 constituted by first metal or first semiconductor, a semiconductor structure layer 5 mounted on the first layer 4 and adapted to excite an electron by plasmon resonance, and a second layer 6 mounted on the semiconductor structure layer 5 and constituted by second metal or second semiconductor.

Abstract translation: 光电检测器1A包括具有由第一金属或第一半导体构成的第一层4的多层结构3，安装在第一层4上并适于通过等离子体共振激发电子的半导体结构层5和安装在第一层上的第二层6 半导体结构层5，由第二金属或第二半导体构成。

公开(公告)号：US10673002B2

公开(公告)日：2020-06-02

申请号：US15489776

申请日：2017-04-18

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shigeo Hara ,  Wataru Akahori ,  Takahiko Yamanaka ,  Tadataka Edamura

IPC: H01L51/42 ,  H01L51/00

Abstract: Organic photoelectric conversion element has a first electrode, a photoelectric conversion layer, and a second electrode. The photoelectric conversion layer has a first organic layer that contains a first organic semiconductor containing principally a p-type organic semiconductor, a second organic layer that contains a second organic semiconductor containing principally an n-type organic semiconductor, and an intermediate layer that contains the first organic semiconductor and the second organic semiconductor. The second organic layer is disposed at a side of the second electrode relative to the first organic layer. The intermediate layer is between the first organic layer and the second organic layer and reaches each of these layers. The thickness of the second organic layer is greater than the sum of the thicknesses of the first organic layer and intermediate layer.

公开(公告)号：US20150053922A1

公开(公告)日：2015-02-26

申请号：US14390842

申请日：2013-05-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi Nakajima ,  Masamichi Yamanishi ,  Kazuue Fujita ,  Minoru Niigaki ,  Toru Hirohata ,  Hiroyuki Yamashita ,  Wataru Akahori

IPC: H01L31/0216 ,  H01L31/0232 ,  H01L31/0352

CPC classification number: H01L31/02164 ,  B82Y20/00 ,  H01L31/02327 ,  H01L31/035209 ,  H01L31/035236 ,  H01L31/101 ,  H01L31/1035

Abstract: A photodetector 1A comprises an optical element 10, having a structure including first regions and second regions periodically arranged with respect to the first regions along a plane perpendicular to a predetermined direction, for generating an electric field component in the predetermined direction when light is incident thereon along the predetermined direction; arid a semiconductor multilayer body 4 having a quantum cascade structure, arranged on the other side opposite from one side in the predetermined direction with respect to the optical element, for producing a current according to the electric field component in the predetermined direction generated by the optical element 10; while the quantum cascade structure includes an active region 4b having a first upper quantum level and a second upper quantum level lower than the first upper quantum level, and an injector region 4c for transporting an electron excited by the active region 4b.

Abstract translation: 光电检测器1A包括光学元件10，其具有包括第一区域和第二区域的结构，所述第一区域和第二区域沿着垂直于预定方向的平面相对于第一区域周期性地布置，以在光入射时沿着预定方向产生电场分量 沿预定方向; 以及具有量子级联结构的半导体多层体4，其相对于光学元件配置在与预定方向的一侧相反的另一侧，用于根据由光学元件产生的预定方向上的电场分量产生电流 元素10; 而量子级联结构包括具有第一上量子级和低于第一上量子级的第二上量子级的有源区4b和用于传输由有源区4b激发的电子的注入区4c。

公开(公告)号：US20150097156A1

公开(公告)日：2015-04-09

申请号：US14390839

申请日：2013-05-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kazutoshi Nakajima ,  Minoru Niigaki ,  Toru Hirohata ,  Hiroyuki Yamashita ,  Wataru Akahori ,  Kazuue Fujita ,  Kazunori Tanaka

IPC: H01L31/0232 ,  H01L31/09

CPC classification number: H01L31/02327 ,  B82Y20/00 ,  H01L31/035236 ,  H01L31/09 ,  H01L31/101 ,  H01L31/1035

Abstract: A photodetector 1A comprises an optical element 10, having a structure including first regions and second regions periodically arranged with respect to the first regions along a plane perpendicular to a predetermined direction, for generating an electric field component in the predetermined direction when light is incident thereon along the predetermined direction; and a semiconductor multilayer body 4 having a quantum cascade structure, arranged on the other side opposite from one side in the predetermined direction with respect to the optical element, for producing a current according to the electric field component in the predetermined direction generated by the optical element 10; while the quantum cascade structure includes an active region 4b for exciting an electron and an injector region 4c for transporting the electron, the active region 4b being formed on the outermost surface on the one side of the injector region 4c in the quantum cascade structure.

Abstract translation: 光电检测器1A包括光学元件10，其具有包括第一区域和第二区域的结构，所述第一区域和第二区域沿着垂直于预定方向的平面相对于第一区域周期性地布置，以在光入射时沿着预定方向产生电场分量 沿预定方向; 以及具有量子级联结构的半导体层叠体4，其相对于光学元件配置在与预定方向的一侧相反的另一侧，用于根据由光学器件产生的预定方向上的电场分量产生电流 元素10; 而量子级联结构包括用于激发电子的有源区域4b和用于传输电子的注入区域4c，有源区域4b形成在量子级联结构中的注入区域4c一侧的最外表面上。