公开(公告)号：US11004999B2

公开(公告)日：2021-05-11

申请号：US16353112

申请日：2019-03-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei Dong ,  Hiroyasu Fujiwara

IPC: H01L31/108 ,  B82Y40/00

Abstract: A photodetector element according to an aspect of the present disclosure includes a semiconductor layer with an uneven structure on one surface side that is constituted of projection portions and recess portions, and converts light into surface plasmons, and a metal film that is provided on the one surface side of the semiconductor layer in a manner corresponding to the uneven structure and a Schottky junction is formed between the metal film and the semiconductor layer. The semiconductor layer is constituted of n-type conductive silicon, and the other surface side of the semiconductor layer serves as an incident surface for light. The metal film is constituted of a material including nickel which form the Schottky junction when combined with the semiconductor layer.

公开(公告)号：US12135444B2

公开(公告)日：2024-11-05

申请号：US18209718

申请日：2023-06-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shohei Hayashi ,  Tetsushi Shimomura ,  Hiroyasu Fujiwara

IPC: G02B5/18 ,  G02B27/00 ,  G02F1/39 ,  G02B3/08

Abstract: A terahertz wave lens includes a substrate having a surface provided with an uneven structure that changes a phase of the terahertz wave. The uneven structure includes a plurality of holes that are periodically arranged. The uneven structure includes a plurality of regions where the plurality of holes are arranged. A height of the hole in a thickness direction of the substrate and a width of the pillar differ for each of the regions. Outer end portions of the uneven structure in the thickness direction are located on the same plane.

公开(公告)号：US12032184B2

公开(公告)日：2024-07-09

申请号：US17120885

申请日：2020-12-14

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shohei Hayashi ,  Tetsushi Shimomura ,  Hiroyasu Fujiwara

IPC: G02B5/18 ,  C23F4/00 ,  G02B3/00 ,  G02B3/08 ,  H01Q15/02 ,  H01Q15/04

CPC classification number: G02B5/1866 ,  C23F4/00 ,  G02B5/1809 ,  G02B5/1857 ,  G02B5/1871 ,  G02B5/1876 ,  G02B2003/0093 ,  G02B3/08 ,  H01Q15/02 ,  H01Q15/04

Abstract: A terahertz wave lens concentrates or collimates a terahertz wave. The terahertz wave lens includes a substrate having a surface provided with an uneven structure that changes a phase of the terahertz wave. The uneven structure includes a plurality of pillars that are periodically arranged. The uneven structure includes a plurality of regions where the plurality of pillars are arranged. A height of the pillar in a thickness direction of the substrate and a width of the pillar differ for each of the regions. A distance (period) between centers of the pillars adjacent to each other is constant. Outer end portions of the uneven structure in the thickness direction are located on the same plane.

公开(公告)号：US11774651B2

公开(公告)日：2023-10-03

申请号：US17116189

申请日：2020-12-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Shohei Hayashi ,  Tetsushi Shimomura ,  Hiroyasu Fujiwara

IPC: G02B5/18 ,  G02F1/39 ,  G02B27/00 ,  G02B3/08

CPC classification number: G02B5/1871 ,  G02B5/1809 ,  G02B5/1857 ,  G02B5/1876 ,  G02B27/0025 ,  G02F1/39 ,  G02B3/08 ,  G02F2203/13

Abstract: A terahertz wave lens includes a substrate having a surface provided with an uneven structure that changes a phase of the terahertz wave. The uneven structure includes a plurality of holes that are periodically arranged. The uneven structure includes a plurality of regions where the plurality of holes are arranged. A height of the hole in a thickness direction of the substrate and a width of the pillar differ for each of the regions. Outer end portions of the uneven structure in the thickness direction are located on the same plane.

公开(公告)号：US10784393B2

公开(公告)日：2020-09-22

申请号：US16100457

申请日：2018-08-10

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Hiroyasu Fujiwara ,  Wei Dong ,  Kazutoshi Nakajima ,  Shohei Hayashi

IPC: H01L31/08 ,  H01L31/02 ,  H01L31/0352 ,  H01L31/07 ,  H01L31/10 ,  H01L31/108 ,  H01L31/101 ,  H01L31/0232 ,  H01L31/0224

Abstract: A photodetection element is a photodetection element having an incidence surface for light on a back surface of a semiconductor layer, and includes a periodic nano-concave/convex structure provided on a front surface of the semiconductor layer and having convex portions and concave portions constituting a longitudinal resonator and a transverse resonator for the light incident from the incidence surface, the periodic nano-concave/convex structure converting the light into surface plasmons, and a metal film provided to cover the periodic nano-concave/convex structure, a height and an arrangement pitch of the convex portions in the periodic nano-concave/convex structure are set such that a resonance wavelength of the longitudinal resonator and a resonance wavelength of the transverse resonator match, and a thickness of the metal film is equal to or greater than 20 nm.

公开(公告)号：US10686094B2

公开(公告)日：2020-06-16

申请号：US16114360

申请日：2018-08-28

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Wei Dong ,  Hiroyasu Fujiwara ,  Kazutoshi Nakajima

IPC: H01L31/108 ,  H01L31/0232 ,  H01L31/0224 ,  G02B6/122 ,  H01L31/0352 ,  H01L31/0236 ,  G02B6/12

Abstract: A photodetection element includes a semiconductor layer having, on one surface side, a periodic concave/convex structure that includes periodic convex portions and concave portions and converts light into surface plasmon, and a metal film provided on the one surface side of the semiconductor layer in correspondence to the periodic concave/convex structure, and in the periodic concave/convex structure, a Schottky junction portion that has a Schottky junction with the metal film is provided on a base end side of the convex portion, and a non-Schottky junction portion that does not have a Schottky junction with the metal film is provided on a distal end side of the convex portion.