摘要:
A field effect transistor is provided which includes a contiguous single-crystal semiconductor region in which a source region, a channel region and a drain region are disposed. The channel region has an edge in common with the source region as a source edge, and the channel region further has an edge in common with the drain region as a drain edge. A gate conductor overlies the channel region. The field effect transistor further includes a structure which applies a stress at a first magnitude to only one of the source edge and the drain edge while applying the stress at no greater than a second magnitude to another one of the source edge and the drain edge, wherein the second magnitude has a value ranging from zero to about half the first magnitude. In a particular embodiment, the stress is applied at the first magnitude to the source edge while the zero or lower magnitude stress is applied to the drain edge. In another embodiment, the stress is applied at the first magnitude to the drain edge while the zero or lower magnitude stress is applied to the drain edge.
摘要:
A bipolar transistor is provided which includes a tapered, i.e. frustum-shaped, collector pedestal having an upper substantially planar surface, a lower surface, and a slanted sidewall extending between the upper surface and the lower surface, the upper surface having substantially less area than the lower surface. The bipolar transistor further includes an intrinsic base overlying the upper surface of the collector pedestal, a raised extrinsic base conductively connected to the intrinsic base and an emitter overlying the intrinsic base. In a particular embodiment, the emitter is self-aligned to the collector pedestal, having a centerline which is aligned to the centerline of the collector pedestal.
摘要:
A SiGe bipolar transistor containing substantially no dislocation defects present between the emitter and collector region and a method of forming the same are provided. The SiGe bipolar transistor includes a collector region of a first conductivity type; a SiGe base region formed on a portion of said collector region; and an emitter region of said first conductivity type formed over a portion of said base region, wherein said collector region and said base region include carbon continuously therein. The SiGe base region is further doped with boron.
摘要:
Multilevel metallization layouts for an integrated circuit chip including transistors having first, second and third elements to which metallization layouts connect. The layouts minimize current limiting mechanism including electromigration by positioning the connection for the second contact vertically from the chip, overlapping the planes and fingers of the metallization layouts to the first and second elements and forming a pyramid or staircase of multilevel metallization layers to smooth diagonal current flow.
摘要:
A transistor having minimized parasitics is provided including an emitter having a recessed extrinsic emitter portion atop an intrinsic emitter portion; a base including an intrinsic base portion in electrical contact with the intrinsic emitter portion and an extrinsic base portion in electrical contact with the intrinsic base portion and electrically isolated from the recessed extrinsic emitter portion by a set of emitter/base spacers; and a collector in electrical contact with the intrinsic base portion. The transistor may further include extrinsic base having top surfaces entirely silicided to the emitter/base spacer. Additionally, the transistor may include a base window opening within the transistor's active area. Methods of forming the above-described transistor are also provided.
摘要:
A transistor having minimized parasitics is provided including an emitter having a recessed extrinsic emitter portion atop an intrinsic emitter portion; a base including an intrinsic base portion in electrical contact with the intrinsic emitter portion and an extrinsic base portion in electrical contact with the intrinsic base portion and electrically isolated from the recessed extrinsic emitter portion by a set of emitter/base spacers; and a collector in electrical contact with the intrinsic base portion. The transistor may further include extrinsic base having top surfaces entirely silicided to the emitter/base spacer. Additionally, the transistor may include a base window opening within the transistor's active area. Methods of forming the above-described transistor are also provided.
摘要:
Provided are antisense morpholino oligomers targeted against bacterial virulence factors such as genes that contribute to antibiotic resistance or biofilm formation, or genes associated with fatty acid biosynthesis, and related compositions and methods of using the oligomers and compositions, for instance, in the treatment of an infected mammalian subject.
摘要:
A nitric oxide gas-releasing conduit configured for surgical implantation through a patient's tympanic membrane. The nitric oxide gas-releasing conduit comprises a gas-permeable cured resin material configured for releasably sequestering therein gas. The gas-permeable cured resin material is charged with nitric oxide gas. The nitric oxide gas-releasing conduit may be optionally coated with an antimicrobial gas-releasing composition. The gas-releasing coating composition may be configured to release nitric oxide.
摘要:
A nitric oxide gas-releasing conduit configured for surgical implantation through a patient's tympanic membrane. The nitric oxide gas-releasing conduit comprises a gas-permeable cured resin material configured for releasably sequestering therein gas. The gas-permeable cured resin material is charged with nitric oxide gas. The nitric oxide gas-releasing conduit may be optionally coated with an antimicrobial gas-releasing composition. The gas-releasing coating composition may be configured to release nitric oxid.
摘要:
This invention pertains to the identification of neurogenerative and/or neurotrophic factors that can induce migration of stem cells to neural tissue and/or induce proliferation and/or differentiation of such cells into neurons. Such agents include, but are not limited to stem cell factor (SCF), heparin binding EGF (HB-EGF), and VEGF.