Elimination of the fast-erase phenomena in flash memory
    4.
    发明授权
    Elimination of the fast-erase phenomena in flash memory 有权
    消除闪存中的快速擦除现象

    公开(公告)号:US07045419B2

    公开(公告)日:2006-05-16

    申请号:US10733230

    申请日:2003-12-12

    CPC classification number: H01L29/66825 H01L29/42324 H01L29/7883

    Abstract: A method of forming a semiconductor device that includes providing a semiconductor substrate, forming a first insulating layer over the semiconductor substrate, forming a floating gate over the first insulating layer with a reaction gas, wherein the floating gate comprises a microcrystalline material having a grain size of about 50–300 Å, forming a second insulating layer over the floating gate, and forming a control gate over the second insulating layer.

    Abstract translation: 一种形成半导体器件的方法,包括提供半导体衬底,在所述半导体衬底上形成第一绝缘层,在所述第一绝缘层上形成具有反应气体的浮栅,其中所述浮栅包括具有晶粒尺寸的微晶材料 约50-300埃,在浮栅上形成第二绝缘层,并在第二绝缘层上形成控制栅极。

    Elimination of the fast-erase phenomena in flash memory
    5.
    发明申请
    Elimination of the fast-erase phenomena in flash memory 有权
    消除闪存中的快速擦除现象

    公开(公告)号:US20050130398A1

    公开(公告)日:2005-06-16

    申请号:US10733230

    申请日:2003-12-12

    CPC classification number: H01L29/66825 H01L29/42324 H01L29/7883

    Abstract: A method of forming a semiconductor device that includes providing a semiconductor substrate, forming a first insulating layer over the semiconductor substrate, forming a floating gate over the first insulating layer with a reaction gas, wherein the floating gate comprises a microcrystalline material having a grain size of about 50-300 Å, forming a second insulating layer over the floating gate, and forming a control gate over the second insulating layer.

    Abstract translation: 一种形成半导体器件的方法,包括提供半导体衬底,在所述半导体衬底上形成第一绝缘层,在所述第一绝缘层上形成具有反应气体的浮栅,其中所述浮栅包括具有晶粒尺寸的微晶材料 约50-300埃,在浮栅上形成第二绝缘层,并在第二绝缘层上形成控制栅极。

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