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1.发明授权Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices 有权用于制造MEMS器件和CMOS器件的集成MEMS-CMOS器件和方法公开(公告)号：US09546090B1
公开(公告)日：2017-01-17
申请号：US14826449
申请日：2015-08-14
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Jia Jie Xia , Nagarajan Ranganathan , Rakesh Kumar , Aveek Nath Chatterjee
CPC classification number: B81B7/007 , B81B2201/016 , B81B2201/0271 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C1/00253 , B81C2201/013 , B81C2201/019 , B81C2201/053 , B81C2203/0735 , B81C2203/0771 , B81C2203/0792
Abstract: Integrated MEMS-CMOS devices and methods for fabricating MEMS devices and CMOS devices are provided. An exemplary method for fabricating a MEMS device and a CMOS device includes forming the CMOS device in and/or over a first side of a semiconductor substrate. Further, the method includes forming the MEMS device in and/or under a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.
Abstract translation: 提供了用于制造MEMS器件和CMOS器件的集成MEMS-CMOS器件和方法。 用于制造MEMS器件和CMOS器件的示例性方法包括在半导体衬底的第一侧中和/或之上形成CMOS器件。 此外，该方法包括在半导体衬底的第二面内和/或下方形成MEMS器件。 半导体衬底的第二面与半导体衬底的第一侧相对。
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公开(公告)号：US20170320093A1
公开(公告)日：2017-11-09
申请号：US15278910
申请日：2016-09-28
Applicant: Globalfoundries Singapore Pte. Ltd.
Inventor： Aveek Nath Chatterjee , Rakesh Kumar , Jaime Viegas , Mateusz Tomasz Madzik
IPC: B06B1/06 , H01L41/047
CPC classification number: B06B1/0629 , B06B1/0238 , B06B1/0622 , B06B2201/55 , G10K11/345 , H01L41/047 , H01L41/0472 , H01L41/0805 , H01L41/0973
Abstract: Provided in accordance with the herein described exemplary embodiments are piezo micro-machined ultrasonic transducers (pMUTs) each having a first electrode that includes a first electrode portion and a second electrode portion. The second electrode portion is separately operable from the first electrode portion. A second electrode is spaced apart from the first electrode and defines a space between the first electrode and the second electrode. A piezoelectric material is disposed in the space. Also provided are arrays of pMUTs wherein individual pMUTs have first electrode portions operably associated with array rows and second electrode portions operably associated with array columns.
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公开(公告)号：US09550668B1
公开(公告)日：2017-01-24
申请号：US14834498
申请日：2015-08-25
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Jia Jie Xia , Nagarajan Ranganathan , Rakesh Kumar , Aveek Nath Chatterjee
CPC classification number: B81B7/02 , B81B7/007 , B81B2201/0228 , B81B2201/0235 , B81B2201/0264 , B81B2207/095 , B81B2207/096 , B81C1/00269 , B81C2203/0109 , H01L29/84
Abstract: Integrated MEMS devices for pressure sensing and inertial sensing, methods for fabricating such integrated devices, and methods for fabricating vertically integrated MEMS pressure sensor/inertial sensor devices are provided. In an example, a method for fabricating an integrated device for pressure and inertial sensing includes forming a MEMS pressure sensor on a first side of a semiconductor substrate. The method further includes forming a MEMS inertial sensor on a second side of the semiconductor substrate. The second side of the semiconductor substrate is opposite the first side of the semiconductor substrate.
Abstract translation: 提供用于压力感测和惯性感测的集成MEMS器件，用于制造这种集成器件的方法，以及用于制造垂直集成的MEMS压力传感器/惯性传感器器件的方法。 在一个示例中，用于制造用于压力和惯性感测的集成装置的方法包括在半导体衬底的第一侧上形成MEMS压力传感器。 该方法还包括在半导体衬底的第二侧上形成MEMS惯性传感器。 半导体衬底的第二面与半导体衬底的第一侧相对。
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Patent Agency Ranking
公开(公告)号：US10554153B2
公开(公告)日：2020-02-04
申请号：US15185642
申请日：2016-06-17
Applicant: Globalfoundries Singapore Pte. Ltd.
Inventor： Aveek Nath Chatterjee , Rakesh Kumar
Abstract: Micro-Electro-Mechanical System (MEMS) devices for harvesting sound energy and methods for fabricating MEMS devices for harvesting sound energy are provided. In an embodiment, a method for fabricating a MEMS device for harvesting sound energy includes forming a pressure sensitive MEMS structure disposed over a semiconductor substrate and including a suspended structure in a cavity. Further, the method includes etching the semiconductor substrate to form an acoustic port through the semiconductor substrate configured to allow acoustic pressure to deflect the suspended structure.
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5.发明申请公开(公告)号：US20170121172A1
公开(公告)日：2017-05-04
申请号：US15405911
申请日：2017-01-13
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Jia Jie Xia , Nagarajan Ranganathan , Rakesh Kumar , Aveek Nath Chatterjee
CPC classification number: B81B7/007 , B81B2201/016 , B81B2201/0271 , B81B2207/015 , B81B2207/07 , B81C1/00246 , B81C1/00253 , B81C2201/013 , B81C2201/019 , B81C2201/053 , B81C2203/0735 , B81C2203/0771 , B81C2203/0792
Abstract: Integrated MEMS-CMOS devices and integrated circuits with MEMS devices and CMOS devices are provided. An exemplary integrated MEMS-CMOS device is vertically integrated and includes a substrate having a first side and a second side opposite the first side. Further, the exemplary vertically integrated MEMS-CMOS device includes a CMOS device located in and/or over the first side of the substrate. Also, the exemplary vertically integrated MEMS-CMOS device includes a MEMS device located in and/or under the second side of the substrate.
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公开(公告)号：US10184951B2
公开(公告)日：2019-01-22
申请号：US15040681
申请日：2016-02-10
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Aveek Nath Chatterjee , Siddharth Chakravarty , Ramachandramurthy Pradeep Yelehanka , Rakesh Kumar
IPC: G01P15/125 , G01P15/09 , G01P15/08 , G01P15/18
Abstract: Three-axis monolithic microelectromechanical system (MEMS) accelerometers and methods for fabricating integrated capacitive and piezo accelerometers are provided. In an embodiment, a three-axis MEMS accelerometer includes a first sensing structure for sensing acceleration in a first direction. Further, the three-axis MEMS accelerometer includes a second sensing structure for sensing acceleration in a second direction perpendicular to the first direction. Also, the three-axis MEMS accelerometer includes a third sensing structure for sensing acceleration in a third direction perpendicular to the first direction and perpendicular to the second direction. At least one sensing structure is a capacitive structure and at least one sensing structure is a piezo structure.
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公开(公告)号：US20170366107A1
公开(公告)日：2017-12-21
申请号：US15185642
申请日：2016-06-17
Applicant: Globalfoundries Singapore Pte. Ltd.
Inventor： Aveek Nath Chatterjee , Rakesh Kumar
CPC classification number: H02N2/188 , H02N2/22 , H03H3/0077 , H03H9/02338 , H03H9/17 , H03H2009/02165 , H03H2009/155
Abstract: Micro-Electro-Mechanical System (MEMS) devices for harvesting sound energy and methods for fabricating MEMS devices for harvesting sound energy are provided. In an embodiment, a method for fabricating a MEMS device for harvesting sound energy includes forming a pressure sensitive MEMS structure disposed over a semiconductor substrate and including a suspended structure in a cavity. Further, the method includes etching the semiconductor substrate to form an acoustic port through the semiconductor substrate configured to allow acoustic pressure to deflect the suspended structure.
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公开(公告)号：US20170227570A1
公开(公告)日：2017-08-10
申请号：US15040681
申请日：2016-02-10
Applicant: GLOBALFOUNDRIES Singapore Pte. Ltd.
Inventor： Aveek Nath Chatterjee , Siddharth Chakravarty , Ramachandramurthy Pradeep Yelehanka , Rakesh Kumar
IPC: G01P15/125 , G01P15/08 , G01P15/18 , G01P15/09
CPC classification number: G01P15/125 , B81B3/0062 , B81B2201/0235 , B81B2203/053 , B81B2203/055 , G01P15/0802 , G01P15/09 , G01P15/18
Abstract: Three-axis monolithic microelectromechanical system (MEMS) accelerometers and methods for fabricating integrated capacitive and piezo accelerometers are provided. In an embodiment, a three-axis MEMS accelerometer includes a first sensing structure for sensing acceleration in a first direction. Further, the three-axis MEMS accelerometer includes a second sensing structure for sensing acceleration in a second direction perpendicular to the first direction. Also, the three-axis MEMS accelerometer includes a third sensing structure for sensing acceleration in a third direction perpendicular to the first direction and perpendicular to the second direction. At least one sensing structure is a capacitive structure and at least one sensing structure is a piezo structure.
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