Electronics package for light emitting semiconductor devices and method of manufacturing thereof

    公开(公告)号:US10957832B2

    公开(公告)日:2021-03-23

    申请号:US16166313

    申请日:2018-10-22

    Abstract: A light emitting semiconductor (LES) device having desirable thermal performance characteristics is disclosed. The LES device includes an insulating substrate layer having a plurality of vias formed therein and at least one LES chip mounted on the insulating substrate layer, with each of the LES chips(s) including an active surface including a light emitting area configured to emit light therefrom and a back surface positioned on a top surface of the insulating substrate layer and including connection pads thereon. A conductor layer is positioned on a bottom surface of the insulating substrate layer and in the vias, the conductor layer in direct contact with the connection pads of the LES chip(s) so as to be electrically and thermally connected thereto. An encapsulant is positioned adjacent the top surface of the insulating substrate layer and surrounding at least part of the LES chip(s), the encapsulant comprising a light transmitting material.

    POWER OVERLAY STRUCTURE FOR A MULTI-CHIP SEMICONDUCTOR PACKAGE

    公开(公告)号:US20250062280A1

    公开(公告)日:2025-02-20

    申请号:US18234603

    申请日:2023-08-16

    Abstract: A multi-chip semiconductor package includes a dielectric interconnect layer having an upper surface and a bottom surface, at least one common source pad disposed on the upper surface of the interconnect layer, at least one common gate pad disposed on the upper surface of the interconnect layer, and a plurality of semiconductor devices each including a gate pad and at least one source pad adhered onto the interconnect layer, wherein the source pads of the plurality of semiconductor devices are electrically connected to the at least one common source pad, and wherein the source pads of the plurality of semiconductor devices are electrically connected in parallel with one another, and wherein the gate pads of the plurality of semiconductor devices are electrically connected to the common gate pad, and wherein the gate pads of the plurality of semiconductor devices are electrically connected in parallel with one another.

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