Self-Contained Heating Element
    1.
    发明申请
    Self-Contained Heating Element 审中-公开
    自包含加热元件

    公开(公告)号:US20130164445A1

    公开(公告)日:2013-06-27

    申请号:US13720301

    申请日:2012-12-19

    Abstract: Provided are assemblies comprising an elongate enclosure comprising a material resistant to thermal expansion at temperatures experienced in a processing chamber. At least one heating element extends along a longitudinal axis of the elongate enclosure through an open interior region allowing a flow of gases to pass the heating element in a direction substantially perpendicular to the longitudinal axis. Methods of processing substrates using a heating element to excite gaseous precursor species are also described.

    Abstract translation: 提供了包括细长外壳的组件,其包括在处理室中经历的温度下耐受热膨胀的材料。 至少一个加热元件沿着细长外壳的纵向轴线延伸穿过开放的内部区域,允许气体流沿基本上垂直于纵向轴线的方向通过加热元件。 还描述了使用加热元件处理衬底以激发气态前体物质的方法。

    Multi-Component Film Deposition
    2.
    发明申请
    Multi-Component Film Deposition 审中-公开
    多组分膜沉积

    公开(公告)号:US20130143415A1

    公开(公告)日:2013-06-06

    申请号:US13308849

    申请日:2011-12-01

    CPC classification number: C23C16/45551

    Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising a plurality of elongate gas ports including at least one first reactive gas port in fluid communication with a first reactive gas and at least one second reactive gas port in fluid communication with a gas manifold. The gas manifold is in fluid communication with at least a second reactive gas different from the first reactive gas and a purge gas. Also provided are atomic layer deposition apparatus and methods including linear energy sources in one or more of region before the gas distribution plate and a region after the gas distribution plate.

    Abstract translation: 提供的是原子层沉积装置和方法,其包括气体分配板,其包括多个细长气体端口,该多个细长气体端口包括与第一反应气体流体连通的至少一个第一反应气体端口和与气体流体连通的至少一个第二反应气体端口 多数。 气体歧管与不同于第一反应气体和吹扫气体的至少第二反应气体流体连通。 还提供了原子层沉积装置和方法,其包括在气体分配板之前的区域中的一个或多个区域和气体分配板之后的区域中的线性能量源。

    Apparatus And Process For Atomic Layer Deposition
    6.
    发明申请
    Apparatus And Process For Atomic Layer Deposition 审中-公开
    用于原子层沉积的装置和工艺

    公开(公告)号:US20120225192A1

    公开(公告)日:2012-09-06

    申请号:US13189692

    申请日:2011-07-25

    CPC classification number: C23C16/45551 C23C16/45527

    Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.

    Abstract translation: 提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。 每个气体喷射器单元包括多个细长的气体喷射器,其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器,所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。 还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

    Apparatus and Process for Atomic Layer Deposition
    7.
    发明申请
    Apparatus and Process for Atomic Layer Deposition 审中-公开
    原子层沉积的装置和工艺

    公开(公告)号:US20120225191A1

    公开(公告)日:2012-09-06

    申请号:US13037992

    申请日:2011-03-01

    CPC classification number: C23C16/45551 C23C16/45527

    Abstract: Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.

    Abstract translation: 提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。 每个气体喷射器单元包括多个细长的气体喷射器,其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器,所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。 还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

    Reactant Delivery System For ALD/CVD Processes
    9.
    发明申请
    Reactant Delivery System For ALD/CVD Processes 审中-公开
    ALD / CVD工艺的反应物输送系统

    公开(公告)号:US20130019960A1

    公开(公告)日:2013-01-24

    申请号:US13554487

    申请日:2012-07-20

    Abstract: Provided are apparatus and methods for generating a chemical precursor. The apparatus comprises an inlet line to be connected to an ampoule and an outlet line to be connected to an ampoule. The inlet line having an inlet valve to control the flow of a carrier gas into the ampoule and the outlet line has an outlet valve to control the flow exiting the ampoule. A bypass valve allows carrier gas to bypass the ampoule and purge the outlet valve without flowing gas into the ampoule.

    Abstract translation: 提供了用于产生化学前体的装置和方法。 该装置包括要连接到安瓿的入口管线和要连接到安瓿的出口管线。 入口管线具有用于控制载气进入安瓿和出口管线的入口阀,其具有出口阀以控制离开安瓿的流量。 旁通阀允许载气旁路安瓿并吹扫出口阀,而不会使气体流入安瓿。

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