公开(公告)号：US20180269150A1

公开(公告)日：2018-09-20

申请号：US15983168

申请日：2018-05-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sean Xuan LIN ,  Xunyuan ZHANG ,  Shao Beng LAW ,  James Jay McMahon

IPC: H01L23/522 ,  H01L21/768 ,  H01L23/532 ,  H01L23/528

CPC classification number: H01L23/5226 ,  H01L21/76816 ,  H01L21/76879 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53295

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to metal interconnect structures for super (skip) via integration and methods of manufacture. The structure includes: a first wiring layer with one or more wiring structures; a second wiring layer including an interconnect and wiring structure; and at least one upper wiring layer with one or more via interconnect and wiring structures located above the second wiring layer. The one or more via interconnect and wiring structures partially including a first metal material and remaining portions with a conductive material over the first metal material. A skip via passes through the second wiring layer and extends to the one or more wiring structures of the first wiring layer. The skip via partially includes the metal material and remaining portions of the skip via includes the conductive material over the first metal material.

公开(公告)号：US10026687B1

公开(公告)日：2018-07-17

申请号：US15437100

申请日：2017-02-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sean Xuan Lin ,  Xunyuan Zhang ,  Shao Beng Law ,  James Jay McMahon

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/522 ,  H01L23/532 ,  H01L23/528 ,  H01L21/768

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to metal interconnect structures for super (skip) via integration and methods of manufacture. The structure includes: a first wiring layer with one or more wiring structures; a second wiring layer including an interconnect and wiring structure; and at least one upper wiring layer with one or more via interconnect and wiring structures located above the second wiring layer. The one or more via interconnect and wiring structures partially including a first metal material and remaining portions with a conductive material over the first metal material. A skip via passes through the second wiring layer and extends to the one or more wiring structures of the first wiring layer. The skip via partially includes the metal material and remaining portions of the skip via includes the conductive material over the first metal material.

公开(公告)号：US09805972B1

公开(公告)日：2017-10-31

申请号：US15437065

申请日：2017-02-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xunyuan Zhang ,  Sean Xuan Lin ,  James Jay McMahon ,  Shao Beng Law

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L21/768 ,  H01L21/288 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76816 ,  H01L21/288 ,  H01L21/76813 ,  H01L21/7685 ,  H01L21/76879 ,  H01L23/5226 ,  H01L23/53209 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/53295 ,  H01L2924/14 ,  H01L2924/15787

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to skip via structures and methods of manufacture. The structure includes: a first wiring layer with one or more wiring structures; an upper wiring layer with one or more wiring structures, located above the first wiring layer; a blocking material which contacts at least one of the wiring structures of the upper wiring layer; a skip via with metallization, the skip via passes through the upper wiring layer and makes contact with the one or more wiring structures of the first wiring layer; and a conductive material in the skip via above the metallization and in a via interconnect above the blocking material.

公开(公告)号：US10573593B2

公开(公告)日：2020-02-25

申请号：US15983168

申请日：2018-05-18

Applicant: GLOBALFOUNDRIES INC.

Inventor： Sean Xuan Lin ,  Xunyuan Zhang ,  Shao Beng Law ,  James Jay McMahon

IPC: H01L21/4763 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

Abstract: The present disclosure relates to semiconductor structures and, more particularly, to metal interconnect structures for super (skip) via integration and methods of manufacture. The structure includes: a first wiring layer with one or more wiring structures; a second wiring layer including an interconnect and wiring structure; and at least one upper wiring layer with one or more via interconnect and wiring structures located above the second wiring layer. The one or more via interconnect and wiring structures partially including a first metal material and remaining portions with a conductive material over the first metal material. A skip via passes through the second wiring layer and extends to the one or more wiring structures of the first wiring layer. The skip via partially includes the metal material and remaining portions of the skip via includes the conductive material over the first metal material.