Organic electroluminescent transistor

    公开(公告)号:US10964919B2

    公开(公告)日:2021-03-30

    申请号:US15413838

    申请日:2017-01-24

    Abstract: The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.

    Thin-film transistor comprising organic semiconductor materials

    公开(公告)号:US11882710B2

    公开(公告)日:2024-01-23

    申请号:US17275547

    申请日:2019-11-19

    CPC classification number: H10K10/484 H10K10/471 H10K85/621

    Abstract: This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.

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