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公开(公告)号:US10964919B2
公开(公告)日:2021-03-30
申请号:US15413838
申请日:2017-01-24
Applicant: Flexterra, Inc.
Inventor: Viviana Biondo , Gianluca Generali , Andrea Stefani , Michele Muccini , Guido Turatti , Mitchell Denti , Hakan Usta , Xiaoyan Chen , Antonio Facchetti
IPC: H01L51/52 , H01L51/00 , C07D495/04 , H01L51/05 , H01L51/50
Abstract: The present teachings relate to an organic electroluminescent transistor with improved light-emission characteristics. More specifically, the present organic electroluminescent transistor has an emissive ambipolar channel including at least one layer of an n-type semiconductor material, at least one layer of a p-type semiconductor material, and at least one layer of an emissive material arranged between the layers of the p-type and n-type semiconductor materials, where the multilayer emissive ambipolar channel includes, among various layers, a layer of a p-type semiconductor material comprising a benzothieno-benzothiophene compound, and/or a layer of an emissive material comprising a blend material that includes an organic carbazole derivative as the host matrix compound and an iridium complex as the guest emitter.
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公开(公告)号:US10147895B2
公开(公告)日:2018-12-04
申请号:US15209710
申请日:2016-07-13
Applicant: Flexterra, Inc.
Inventor: Shaofeng Lu , Antonio Facchetti , Xiang Yu , Darwin Scott Bull , Karen K. Chan
IPC: C08G65/02 , C08G65/06 , H01L51/10 , H01L51/05 , C08G61/12 , H01L51/00 , C08G61/08 , H01L29/47 , H01L29/786 , H01L29/772
Abstract: The present teachings relate to curable linear polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include an organic semiconductor layer and a dielectric layer prepared from such curable linear polymers. In some embodiments, the device can include a passivation layer prepared from the linear polymers described herein. The present linear polymers can be solution-processed, then cured thermally (particularly, at relatively low temperatures) and/or photochemically into various thin film materials with desirable properties.
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公开(公告)号:US09812645B2
公开(公告)日:2017-11-07
申请号:US15043956
申请日:2016-02-15
Applicant: Flexterra, Inc.
Inventor: Antonio Facchetti , Mitchell Denti
IPC: C07D487/06 , H01L51/00 , H01L51/05 , H01L51/42 , H01L51/50
CPC classification number: H01L51/0053 , C07D487/06 , H01L51/0558 , H01L51/4253 , H01L51/5012
Abstract: The present invention relates to new semiconductor materials prepared from perylene-based compounds. Such compounds can exhibit high carrier mobility and/or good current modulation characteristics. In addition, the compounds of the present teachings can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
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公开(公告)号:US20170227846A1
公开(公告)日:2017-08-10
申请号:US15495928
申请日:2017-04-24
Applicant: Flexterra, Inc.
Inventor: Yan Zheng , Yan Hu , Wei Zhao , Antonio Facchetti
IPC: G03F7/038 , H01L21/02 , G03F7/16 , G03F7/42 , G03F7/20 , G03F7/32 , G03F7/075 , G03F7/40 , G03F7/004
Abstract: The present teachings relate to compositions for forming a negative-tone photopatternable dielectric material, where the compositions include, among other components, an organic filler and one or more photoactive compounds, and where the presence of the organic filler enables the effective removal of such photoactive compounds (after curing, and during or after the development step) which, if allowed to remain in the photopatterned dielectric material, would lead to deleterious effects on its dielectric properties.
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公开(公告)号:US20170155053A1
公开(公告)日:2017-06-01
申请号:US15430535
申请日:2017-02-12
Applicant: Flexterra, Inc.
Inventor: Antonio Facchetti , Zhihua Chen , Jennifer E. Brown
CPC classification number: H01L51/0036 , C07D285/14 , C07D417/14 , C07D495/04 , C07F7/0816 , C08G61/123 , C08G61/126 , C08G2261/12 , C08G2261/124 , C08G2261/1412 , C08G2261/1424 , C08G2261/146 , C08G2261/149 , C08G2261/228 , C08G2261/3223 , C08G2261/3243 , C08G2261/3246 , C08G2261/414 , C08G2261/91 , C08G2261/92 , C08K3/045 , C08L65/00 , H01L51/0043 , H01L51/0047 , H01L51/0541 , H01L51/0545 , H01L51/0558 , H01L51/4253 , Y02E10/549 , C08K3/04
Abstract: The present invention relates to new semiconducting compounds having at least one optionally substituted benzo[d][1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
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公开(公告)号:US20240400736A1
公开(公告)日:2024-12-05
申请号:US18686469
申请日:2022-04-21
Applicant: Flexterra, Inc.
Inventor: Antonio Facchetti , Yu Xia , Shaofeng Lu , Mark Seger , Zhihua Chen , Shiuan-Iou Lin , Liang-Je Lai , Hsiu-Chun Wu , Jing-Yun Chen
IPC: C08F218/10 , H01B3/44
Abstract: The present disclosure relates generally to colored dielectric polymer materials, methods of making them and uses thereof. In particular, the application concerns a colored dielectric polymer material comprising a crosslinked polymer and a dye dispersed in the crosslinked polymer.
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公开(公告)号:US20180323375A1
公开(公告)日:2018-11-08
申请号:US15772923
申请日:2017-01-09
Applicant: Flexterra, Inc. , RAYNERGY TEK INC.
Inventor: Antonio Facchetti , Zhihua Chen , Chuang-Yi Liao
IPC: H01L51/00 , C08G61/12 , C07D513/14
CPC classification number: H01L51/0036 , C07D513/14 , C08G61/12 , C08G61/123 , C08G61/126 , C08G2261/1412 , C08G2261/1424 , C08G2261/146 , C08G2261/149 , C08G2261/164 , C08G2261/226 , C08G2261/3223 , C08G2261/3225 , C08G2261/3243 , C08G2261/3246 , C08G2261/344 , C08G2261/364 , C08G2261/414 , C08G2261/91 , C08G2261/92 , C08K3/045 , H01L51/0071 , H01L51/0074 , H01L51/0525 , H01L51/0558 , Y02E10/549 , C08L65/00
Abstract: The present invention relates to new semiconducting compounds having at least one optionally substituted dithieno[1,2,3]thiadiazole moiety. The compounds disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions.
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公开(公告)号:US20240400834A1
公开(公告)日:2024-12-05
申请号:US18686476
申请日:2022-04-21
Applicant: Flexterra, Inc.
Inventor: Antonio Facchetti , Zhihua Chen , Shaofeng Lu , Yu Xia , Mark Seger , Shiuan-Iou Lin , Hsiu-Chun Wu , Liang-Je Lai , Jing-Yun Chen
IPC: C09B67/20 , C08J5/18 , C08K5/18 , C08K5/3437 , C08K5/375 , C08K5/378 , C08K5/45 , C09B1/32 , C09B1/58 , C09B57/08 , C09B69/10 , G02F1/1333 , G02F1/1339 , G02F1/1343
Abstract: The present disclosure relates generally to multimeric dyes, colored dielectric polymer materials, methods of making them and uses thereof. In particular, the application concerns a colored dielectric polymer material comprising a multimeric dye with structure wherein each D is independently a chromophoric unit; each L is independently absent or is a linking group comprising no more than 10 atoms in length as measured in the shortest path from D to A; A is a bridging group; and n is an integer in the range of 1 to 3.
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公开(公告)号:US20240363082A1
公开(公告)日:2024-10-31
申请号:US18686467
申请日:2022-04-21
Applicant: Flexterra, Inc.
Inventor: Antonio Facchetti , Yu Xia , Shaofeng Lu , Shiuan-Iou Lin , Liang-Je Lai
IPC: G09G3/34
CPC classification number: G09G3/348 , G09G2300/0426 , G09G2300/08 , G09G2330/04
Abstract: An active matrix fluidic droplet driver system comprising a plurality fluidic droplet pixels driver comprising organic thin-film transistors is described. Each fluidic droplet pixel driver includes an organic thin film transistor and a pixel electrode where the gate dielectric layer and the pixel dielectric layer comprise an organic polymer. The active matrix fluidic droplet driver system can be fabricated on plastic substrates at low temperature and operates at no more than 40 V.
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公开(公告)号:US11882710B2
公开(公告)日:2024-01-23
申请号:US17275547
申请日:2019-11-19
Applicant: Flexterra, Inc.
Inventor: Antonio Facchetti , Yu Xia , Zhihua Chen , Timothy Chiu , Shaofeng Lu
CPC classification number: H10K10/484 , H10K10/471 , H10K85/621
Abstract: This invention relates to a thin-film transistor including, a dielectric layer having a first side and an opposed second side; a source electrode, a drain electrode separated from the source electrode, and a semiconductor component disposed between and in contact with the source electrode and the drain electrode, the source electrode, the drain electrode and the semiconductor component being disposed adjacent the first side of the dielectric layer; and a gate electrode disposed adjacent the second side of the dielectric layer opposite the semiconductor component; wherein the semiconductor component comprises one or more n-type organic semiconductor materials based on arene-bis(dicarboximide)s, and wherein the thin-film transistor has a channel length, measured as the shortest path from the source electrode to the drain electrode, of no more than 20 μm.
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