公开(公告)号：US20180292745A1

公开(公告)日：2018-10-11

申请号：US16008573

申请日：2018-06-14

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Kiet A. Chau ,  Son T. Chau

IPC: G03F1/80 ,  H01L21/265 ,  G03F1/82 ,  H01J37/05 ,  H01J37/147 ,  H01J37/317 ,  H01L21/02 ,  H05H3/02 ,  H01L21/311 ,  B24B37/04 ,  H01L29/36

Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

公开(公告)号：US10670960B2

公开(公告)日：2020-06-02

申请号：US16008573

申请日：2018-06-14

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Kiet A. Chau ,  Son T. Chau

IPC: H01J37/00 ,  G03F1/80 ,  H01J37/317 ,  H01L21/311 ,  H01L21/265 ,  H01L21/02 ,  G03F1/82 ,  H05H3/02 ,  H01J37/147 ,  H01J37/05 ,  H01J37/32 ,  H01L29/36 ,  B24B37/04

Abstract: A method of processing a trench, via, hole, recess, void, or other feature that extends a depth into a substrate to a base or bottom and has an opening with high aspect ratio (into depth from opening to base or bottom divided by minimum space of the trench therebetween) by irradiation with an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials at the base or bottom of the opening.

公开(公告)号：US11735432B2

公开(公告)日：2023-08-22

申请号：US17225272

申请日：2021-04-08

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Kiet A. Chau ,  Thy Yam ,  Michael J. Walsh

IPC: H01L21/311 ,  C03C15/02 ,  H01L21/306 ,  H01L21/3213 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3105 ,  C03C15/00 ,  H01L21/265 ,  H01L21/308

CPC classification number: H01L21/32134 ,  C03C15/00 ,  C03C15/025 ,  H01L21/0234 ,  H01L21/02115 ,  H01L21/02167 ,  H01L21/02227 ,  H01L21/02238 ,  H01L21/02252 ,  H01L21/02274 ,  H01L21/02326 ,  H01L21/26566 ,  H01L21/3065 ,  H01L21/3086 ,  H01L21/30604 ,  H01L21/3105 ,  H01L21/31105 ,  H01L21/31111 ,  H01L21/31116 ,  H01J2237/061 ,  H01J2237/0812

Abstract: A method for removing amorphous regions from a surface of a crystal substrate uses an accelerated neutral beam including reactive gas species for removing or reactively modifying material surfaces without sputtering. Accelerated neutral atom beam enabled surface reactions remove surface contaminants from substrate surfaces to create an interface region with exposed crystal lattice in preparation for next phase processing.

公开(公告)号：US20210225661A1

公开(公告)日：2021-07-22

申请号：US17225272

申请日：2021-04-08

Applicant: Exogenesis Corporation

Inventor： Sean R. Kirkpatrick ,  Kiet A. Chau ,  Thy Yam ,  Michael J. Walsh

IPC: H01L21/3213 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3105 ,  C03C15/00 ,  H01L21/265 ,  H01L21/308 ,  C03C15/02

Abstract: A method for removing amorphous regions from a surface of a crystal substrate uses an accelerated neutral beam including reactive gas species for removing or reactively modifying material surfaces without sputtering. Accelerated neutral atom beam enabled surface reactions remove surface contaminants from substrate surfaces to create an interface region with exposed crystal lattice in preparation for next phase processing.