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    Measuring in-situ UV intensity in UV cure tool
    1.
    发明授权
    Measuring in-situ UV intensity in UV cure tool 有权
    测量UV固化工具中的原位紫外线强度

    公开(公告)号：US08283644B2

    公开(公告)日：2012-10-09

    申请号：US13070306

    申请日：2011-03-23

    申请人： Eugene Smargiassi ,  Boaz Kenane ,  James Lee ,  Xiaolan Chen

    发明人： Eugene Smargiassi ,  Boaz Kenane ,  James Lee ,  Xiaolan Chen

    IPC分类号： H01L21/30 ,  G03F7/00

    CPC分类号： G01N21/33 ,  H01L21/67115 ,  H01L21/67248

    摘要： Provided are improved apparatus and methods for radiative treatment. In some embodiments, a semiconductor processing apparatus for radiative cure includes a process chamber and a radiation assembly external to the process chamber. The radiation assembly transmits radiation into the chamber on a substrate holder through a chamber window. A radiation detector measures radiation intensity from time to time. The assembly includes a gas inlet and exhaust operable to flow a radiation-activatable cooling gas through the radiation assembly.

    摘要翻译： 提供了用于辐射治疗的改进的装置和方法。 在一些实施例中，用于辐射固化的半导体处理装置包括处理室和处理室外部的辐射组件。 辐射组件通过腔室窗口将辐射传播到衬底保持器上的腔室中。 辐射探测器不时地测量辐射强度。 组件包括可操作以使可辐射致冷的冷却气体流过辐射组件的气体入口和排气口。

    MEASURING IN-SITU UV INTENSITY IN UV CURE TOOL
    2.
    发明申请
    MEASURING IN-SITU UV INTENSITY IN UV CURE TOOL 有权
    测量UV固化工具中的紫外线强度

    公开(公告)号：US20120161021A1

    公开(公告)日：2012-06-28

    申请号：US13070306

    申请日：2011-03-23

    申请人： Eugene Smargiassi ,  Boaz Kenane ,  James Lee ,  Xiaolan Chen

    发明人： Eugene Smargiassi ,  Boaz Kenane ,  James Lee ,  Xiaolan Chen

    IPC分类号： G01J1/42

    CPC分类号： G01N21/33 ,  H01L21/67115 ,  H01L21/67248

    摘要： Provided are improved apparatus and methods for radiative treatment. In some embodiments, a semiconductor processing apparatus for radiative cure includes a process chamber and a radiation assembly external to the process chamber. The radiation assembly transmits radiation into the chamber on a substrate holder through a chamber window. A radiation detector measures radiation intensity from time to time. The assembly includes a gas inlet and exhaust operable to flow a radiation-activatable cooling gas through the radiation assembly.

    摘要翻译： 提供了用于辐射治疗的改进的装置和方法。 在一些实施例中，用于辐射固化的半导体处理装置包括处理室和处理室外部的辐射组件。 辐射组件通过腔室窗口将辐射传播到衬底保持器上的腔室中。 辐射探测器不时地测量辐射强度。 组件包括可操作以使可辐射致冷的冷却气体流过辐射组件的气体入口和排气口。

    TESTING METHOD FOR LED WAFER
    3.
    发明申请
    TESTING METHOD FOR LED WAFER 审中-公开
    LED波形测试方法

    公开(公告)号：US20120326060A1

    公开(公告)日：2012-12-27

    申请号：US13526809

    申请日：2012-06-19

    申请人： Boaz Kenane ,  Xiaolan Chen

    发明人： Boaz Kenane ,  Xiaolan Chen

    IPC分类号： G01J1/04

    CPC分类号： G01J3/502 ,  G01J3/0216 ,  G01J3/513 ,  G01J2001/4252

    摘要： The current application is directed to an apparatus and a method for parallel testing and sorting of LED dies on a substrate wafer. The apparatus includes a moving stage and a chuck for the wafer, a wafer prober, collecting and imaging optics, sorting and separating optics, and a linear or rectangular array of light detectors. The method of testing includes moving an LED wafer or a test device on an XY stage, connecting the prober to a line of multiple LED dies or several lines of multiple LED dies, referred to as an “array of devices under test” (“ADUT”), measuring the electrical characteristics of the individual devices under test (“DUT”) in parallel, and collecting light from, and identifying the intensity and wavelength distribution of, the individual DUT in parallel.

    摘要翻译： 目前的应用涉及用于在衬底晶片上并行测试和分类LED管芯的装置和方法。 该装置包括用于晶片的移动台和卡盘，晶片探测器，收集和成像光学器件，分类和分离光学器件以及光检测器的线性或矩形阵列。 测试方法包括在XY平台上移动LED晶片或测试装置，将探测器连接到多个LED管芯或多条LED管的线路，称为被测设备阵列（ADUT），测量 被测设备（DUT）的并联电气特性，并且并行地收集来自各个DUT的光并识别各个DUT的强度和波长分布。

    Electron beam column using high numerical aperture photocathode source illumination
    4.
    发明授权
    Electron beam column using high numerical aperture photocathode source illumination 失效
    电子束柱采用高数值孔径光电阴极源照明

    公开(公告)号：US06448568B1

    公开(公告)日：2002-09-10

    申请号：US09365604

    申请日：1999-07-30

    申请人： Paul C. Allen ,  Xiaolan Chen ,  Douglas E. Holmgren ,  Samuel C. Howells

    发明人： Paul C. Allen ,  Xiaolan Chen ,  Douglas E. Holmgren ,  Samuel C. Howells

    IPC分类号： H01J4006

    CPC分类号： B82Y10/00 ,  G03F7/70325 ,  G03F7/70375 ,  G03F7/70808 ,  H01J37/073 ,  H01J2237/3175

    摘要： A lithography apparatus including both a laser beam source and an electron beam column, where the electron beam column has a support(in one embodiment a window in the column housing) having an index of refraction n. The support, having a photocathode source material disposed on its remote surface, is located in some embodiments such that the internal angle of the incident laser beam is &thgr; with respect to a line perpendicular to the remote surface. The numerical aperture of the substrate(equal to nsin &thgr;) is greater than one in one embodiment, resulting in a high resolution spot size diameter incident on the photocathode source material at the remote surface. Incident energy from the laser beam thereby emits a corresponding high resolution electron beam from the photocathode source material. Electromagnetic lens components are disposed downstream in the electron beam column to demagnify the electron beam. This apparatus allows the continuously decreasing minimum feature dimension sizes for semiconductor electron beam lithography.

    摘要翻译： 包括激光束源和电子束列的光刻设备，其中电子束柱具有折射率n的支撑（在一个实施例中为柱壳体中的窗口）。 具有设置在其远程表面上的光电阴极源材料的支撑件位于一些实施例中，使得入射激光束的内角相对于垂直于远程表面的线是θ。 在一个实施例中，衬底的数值孔径（等于nsinθ）大于一个，导致入射到远端表面的光电阴极源材料上的高分辨率光斑尺寸直径。 因此来自激光束的入射能量由此从光电阴极源材料发射出相应的高分辨率电子束。 电磁透镜部件设置在电子束列的下游，以使电子束缩小。 该装置允许连续减小用于半导体电子束光刻的最小特征尺寸尺寸。

    Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns
    5.
    发明授权
    Methods and apparatus for integrating optical and interferometric lithography to produce complex patterns 有权
    用于整合光学和干涉光刻以产生复杂图案的方法和装置

    公开(公告)号：US06233044B1

    公开(公告)日：2001-05-15

    申请号：US09273399

    申请日：1999-03-22

    申请人： Steven R. J. Brueck ,  Xiaolan Chen ,  Andrew Frauenglass ,  Saleem H. Zaidi ,  Janusz Wilczynski

    发明人： Steven R. J. Brueck ,  Xiaolan Chen ,  Andrew Frauenglass ,  Saleem H. Zaidi ,  Janusz Wilczynski

    IPC分类号： G03B2754

    CPC分类号： G03F7/70108 ,  G03F7/2022 ,  G03F7/70241 ,  G03F7/70308 ,  G03F7/70408 ,  G03F7/7045

    摘要： The present invention provides methods and apparatus for defining a single structure on a semiconductor wafer by spatial frequency components whereby some of the spatial frequency components are derived by optical lithography and some by interferometric lithographic techniques. Interferometric lithography images the high frequency components while optical lithography images the low frequency components. Optics collects many spatial frequencies and the interferometry shifts the spatial frequencies to high spatial frequencies. Thus, because the mask does not need to provide high spatial frequencies, the masks are configured to create only low frequency components, thereby allowing fabrication of simpler masks having larger structures. These methods and apparatus facilitate writing more complex repetitive as well as non-repetitive patterns in a single exposure with a resolution which is higher than that currently available using known optical lithography alone.

    摘要翻译： 本发明提供用于通过空间频率分量在半导体晶片上定义单个结构的方法和装置，由此通过光学光刻获得一些空间频率分量，而通过干涉光刻技术导出一些空间频率分量。 干涉光刻成像高频分量，而光刻成像低频分量。 光学收集许多空间频率，干涉测量将空间频率移动到高空间频率。 因此，由于掩模不需要提供高空间频率，所以掩模被配置为仅产生低频分量，从而允许制造具有较大结构的更简单的掩模。 这些方法和设备有助于在单次曝光中以比目前可用的已知光刻单独的分辨率更高的分辨率编写更复杂的重复和非重复图案。

    Kitchen rack
    10.
    外观设计
    Kitchen rack 有权

    公开(公告)号：USD1011809S1

    公开(公告)日：2024-01-23

    申请号：US29836961

    申请日：2022-04-29

    申请人： Xiaolan Chen

    设计人： Xiaolan Chen

    摘要： FIG. 1 is a front, left and top perspective view of a kitchen rack, showing my design.
    FIG. 2 is a front elevation view thereof.
    FIG. 3 is a front elevation view thereof.
    FIG. 4 is a rear elevation view thereof.
    FIG. 5 is a left side elevation view thereof.
    FIG. 6 is a right side elevation view thereof.
    FIG. 7 is a top plan view thereof.
    FIG. 8 is a front, left and top perspective view of a second embodiment of a kitchen rack.
    FIG. 9 is a front elevation view of the second embodiment of the kitchen rack of FIG. 8.
    FIG. 10 is a rear elevation view of the second embodiment of the kitchen rack of FIG. 8.
    FIG. 11 is a left side elevation view of the second embodiment of the kitchen rack of FIG. 8.
    FIG. 12 is a right side elevation view of the second embodiment of the kitchen rack of FIG. 8.
    FIG. 13 is a top plan elevation view of the second embodiment of the kitchen rack of FIG. 8; and,
    FIG. 14 is a bottom plan elevation view of the second embodiment of the kitchen rack of FIG. 8.
    The broken lines shown in the drawings are included for the purpose of illustrating portions of the kitchen rack that form no part of the claimed design.