公开(公告)号：US09123548B1

公开(公告)日：2015-09-01

申请号：US14449028

申请日：2014-07-31

Applicant: Electronics and Telecommunications Research Institute

Inventor： Jin-Gun Koo ,  Jong Il Won ,  Hyun-cheol Bae ,  Sang Gi Kim ,  Yil Suk Yang

IPC: H01L29/06 ,  H01L29/10 ,  H01L21/8249

CPC classification number: H01L29/0634 ,  H01L21/76224 ,  H01L21/8249 ,  H01L27/0623 ,  H01L27/0922 ,  H01L29/0657 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/6625 ,  H01L29/735 ,  H01L29/7813 ,  H01L29/7835

Abstract: Provided is a semiconductor device. The semiconductor device includes: a first semiconductor layer having a first region with a first device and a second region with a second device; a device isolation pattern provided in the first semiconductor layer and electrically separating the first device and the second device from each other; a drain provided on a lower surface of the first region of the first semiconductor layer; and a second semiconductor layer provided on a lower surface of the second region of the first semiconductor layer.

Abstract translation: 提供一种半导体器件。 该半导体器件包括：第一半导体层，其具有带有第一器件的第一区域和具有第二器件的第二区域; 设置在所述第一半导体层中并将所述第一装置和所述第二装置彼此电分离的装置隔离图案; 设置在所述第一半导体层的所述第一区域的下表面上的漏极; 以及设置在所述第一半导体层的所述第二区域的下表面上的第二半导体层。

公开(公告)号：US08975692B2

公开(公告)日：2015-03-10

申请号：US14100780

申请日：2013-12-09

Applicant: Electronics and Telecommunications Research Institute

Inventor： Sang Gi Kim ,  Jin-Gun Koo ,  Seong Wook Yoo ,  Jong-Moon Park ,  Jin Ho Lee ,  Kyoung Il Na ,  Yil Suk Yang ,  Jongdae Kim

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/225 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L21/2255 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/1095 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7811

Abstract: Provided are a semiconductor device and a method of fabricating the same. The method includes: forming a trench in a semiconductor substrate of a first conductive type; forming a trench dopant containing layer including a dopant of a second conductive type on a sidewall and a bottom surface of the trench; forming a doping region by diffusing the dopant in the trench dopant containing layer into the semiconductor substrate; and removing the trench dopant containing layer.

Abstract translation: 提供半导体器件及其制造方法。 该方法包括：在第一导电类型的半导体衬底中形成沟槽; 在所述沟槽的侧壁和底表面上形成包含第二导电类型的掺杂剂的沟槽掺杂剂层; 通过将所述沟槽掺杂剂含量层中的掺杂剂扩散到所述半导体衬底中来形成掺杂区域; 并去除含沟槽掺杂剂层。