Film thickness monitor
    1.
    发明授权
    Film thickness monitor 有权
    胶片厚度监视器

    公开(公告)号:US09360302B2

    公开(公告)日:2016-06-07

    申请号:US13679128

    申请日:2012-11-16

    IPC分类号: G01N21/00 G01B11/06 G01B9/02

    摘要: A measurement unit comprising a light source and a photodetector may be formed in a cavity in a substrate. The light source produces light that impinges a material layer and is reflected back to the photodetector. Through methods such as interferometry and ellipsometry, the thickness of the material layer may be calculated from the light intensity data measured by the photodetector. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译: 包括光源和光电检测器的测量单元可以形成在基板中的空腔中。 光源产生照射材料层并被反射回光电检测器的光。 通过诸如干涉测量和椭偏仪的方法,材料层的厚度可以由光电检测器测量的光强度数据计算。 要强调的是,该摘要被提供以符合要求抽象的规则,允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是,它不会用于解释或限制权利要求的范围或含义。

    PROCESS CONDITION SENSING DEVICE AND METHOD FOR PLASMA CHAMBER
    2.
    发明申请
    PROCESS CONDITION SENSING DEVICE AND METHOD FOR PLASMA CHAMBER 有权
    过程状态感测装置和等离子体室的方法

    公开(公告)号:US20110174777A1

    公开(公告)日:2011-07-21

    申请号:US12691695

    申请日:2010-01-21

    申请人: Earl Jensen Mei Sun

    发明人: Earl Jensen Mei Sun

    IPC分类号: C23F1/00 C23F1/08

    摘要: A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

    摘要翻译: 用于测量用于处理工件的等离子体室中的等离子体工艺参数的感测装置可以包括具有嵌入在衬底中的一个或多个传感器的衬底。 基板可以具有由在等离子体室中等离子体处理的与工件基本相同的材料制成的表面。 每个传感器可以包括由与基底表面基本相同的材料制成的收集器部分。 集电器部分包括与衬底的表面平齐的表面。 传感器电子器件嵌入基板并耦合到收集器部分。 当衬底表面暴露于等离子体时,可以用传感器测量由等离子体产生的一个或多个信号。

    Process condition measuring device (PCMD) and method for measuring process conditions in a workpiece processing tool configured to process production workpieces
    4.
    发明授权
    Process condition measuring device (PCMD) and method for measuring process conditions in a workpiece processing tool configured to process production workpieces 有权
    工艺条件测量装置(PCMD)和用于测量工件处理工具中的工艺条件的方法,该工件处理工具被配置为处理生产工件

    公开(公告)号:US09134186B2

    公开(公告)日:2015-09-15

    申请号:US13020770

    申请日:2011-02-03

    IPC分类号: G01K17/00 G01K1/16 H01L21/67

    CPC分类号: G01K17/00 H01L21/67248

    摘要: A process condition measuring device (PCMD) may include first and second substrate components. One or more temperature sensors are embedded within each substrate component. The first and second substrate components are sandwiched together such that each temperature sensor in the second substrate component is aligned in tandem with a corresponding temperature sensor located in the first substrate component. Alternatively first and second temperature sensors may be positioned in parallel in the same substrate. Temperature differences may be measured between pairs of corresponding temperature sensors when the PCMD is subjected to process conditions in a workpiece processing tool. Process conditions in the tool may be calculated from the temperature differences.

    摘要翻译: 工艺条件测量装置(PCMD)可以包括第一和第二衬底部件。 一个或多个温度传感器嵌入每个基板部件内。 将第一和第二基板部件夹在一起,使得第二基板部件中的每个温度传感器与位于第一基板部件中的对应的温度传感器串联对准。 或者,第一和第二温度传感器可以在同一衬底中平行定位。 当PCMD在工件处理工具中经受工艺条件时,可以在成对的相应温度传感器之间测量温差。 工具中的工艺条件可以根据温差计算。

    HIGH TEMPERATURE SENSOR WAFER FOR IN-SITU MEASUREMENTS IN ACTIVE PLASMA
    5.
    发明申请
    HIGH TEMPERATURE SENSOR WAFER FOR IN-SITU MEASUREMENTS IN ACTIVE PLASMA 有权
    高温传感器用于现场等离子体测量

    公开(公告)号:US20140192840A1

    公开(公告)日:2014-07-10

    申请号:US13787178

    申请日:2013-03-06

    IPC分类号: G01K1/14

    CPC分类号: G01K1/14 G01K1/12 G01K2215/00

    摘要: Aspects of the present disclosure disclose a component module in a process condition measuring device comprises a support for supporting a component, one or more legs configured to suspend the support in a spaced-apart relationship with respect to a substrate. An electrically conductive or low-resistivity semiconductor enclosure is configured to enclose the component, the support and the legs between the substrate and the enclosure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译: 本公开的方面公开了一种处理状态测量装置中的部件模块,包括用于支撑部件的支撑件,一个或多个腿部,其配置成以相对于基板间隔开的关系悬挂支撑件。 导电或低电阻率半导体外壳被配置为将部件,支撑件和支脚封闭在基板和外壳之间。 要强调的是,该摘要被提供以符合要求抽象的规则,允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是,它不会用于解释或限制权利要求的范围或含义。

    WAFER LEVEL SPECTROMETER
    6.
    发明申请

    公开(公告)号:US20120318966A1

    公开(公告)日:2012-12-20

    申请号:US13491442

    申请日:2012-06-07

    IPC分类号: G01J3/50 B82Y15/00

    摘要: A sensor apparatus for measuring characteristics of optical radiation has a substrate and a low profile spectrally selective detection system located within the substrate at one or more spatially separated locations. The spectrally selective detection system includes a generally laminar array of wavelength selectors optically coupled to a corresponding array of optical detectors. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译: 用于测量光辐射特性的传感器装置具有位于一个或多个空间分离位置的衬底内的衬底和低剖面光谱选择性检测系统。 光谱选择性检测系统包括光学耦合到相应阵列的光学检测器的波长选择器的大体层流阵列。 要强调的是,该摘要被提供以符合要求抽象的规则,允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是,它不会用于解释或限制权利要求的范围或含义。

    PROCESS CONDITION MEASURING DEVICE (PCMD) AND METHOD FOR MEASURING PROCESS CONDITIONS IN A WORKPIECE PROCESSING TOOL CONFIGURED TO PROCESS PRODUCTION WORKPIECES
    7.
    发明申请
    PROCESS CONDITION MEASURING DEVICE (PCMD) AND METHOD FOR MEASURING PROCESS CONDITIONS IN A WORKPIECE PROCESSING TOOL CONFIGURED TO PROCESS PRODUCTION WORKPIECES 有权
    工艺条件测量装置(PCMD)和方法,用于在配置加工生产工作的工件加工工具中测量工艺条件

    公开(公告)号:US20120203495A1

    公开(公告)日:2012-08-09

    申请号:US13020770

    申请日:2011-02-03

    IPC分类号: G01K17/00 G06F15/00

    CPC分类号: G01K17/00 H01L21/67248

    摘要: A process condition measuring device (PCMD) may include first and second substrate components. One or more temperature sensors are embedded within each substrate component. The first and second substrate components are sandwiched together such that each temperature sensor in the second substrate component is aligned in tandem with a corresponding temperature sensor located in the first substrate component. Alternatively first and second temperature sensors may be positioned in parallel in the same substrate. Temperature differences may be measured between pairs of corresponding temperature sensors when the PCMD is subjected to process conditions in a workpiece processing tool. Process conditions in the tool may be calculated from the temperature differences.

    摘要翻译: 工艺条件测量装置(PCMD)可以包括第一和第二衬底部件。 一个或多个温度传感器嵌入每个基板部件内。 将第一和第二基板部件夹在一起,使得第二基板部件中的每个温度传感器与位于第一基板部件中的对应的温度传感器串联对准。 或者,第一和第二温度传感器可以在同一衬底中平行定位。 当PCMD在工件处理工具中经受工艺条件时,可以在成对的相应温度传感器之间测量温差。 工具中的工艺条件可以根据温差计算。

    High temperature sensor wafer for in-situ measurements in active plasma
    8.
    发明授权
    High temperature sensor wafer for in-situ measurements in active plasma 有权
    用于在有源等离子体中进行原位测量的高温传感器晶圆

    公开(公告)号:US09222842B2

    公开(公告)日:2015-12-29

    申请号:US13787178

    申请日:2013-03-06

    IPC分类号: H01L21/00 G01K1/14 G01K1/12

    CPC分类号: G01K1/14 G01K1/12 G01K2215/00

    摘要: Aspects of the present disclosure disclose a component module in a process condition measuring device comprises a support for supporting a component, one or more legs configured to suspend the support in a spaced-apart relationship with respect to a substrate. An electrically conductive or low-resistivity semiconductor enclosure is configured to enclose the component, the support and the legs between the substrate and the enclosure. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译: 本公开的方面公开了一种处理状态测量装置中的部件模块,包括用于支撑部件的支撑件,一个或多个腿部,其配置成以相对于基板间隔开的关系悬挂支撑件。 导电或低电阻率半导体外壳被配置为将部件,支撑件和支脚封闭在基板和外壳之间。 要强调的是,该摘要被提供以符合要求抽象的规则,允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是,它不会用于解释或限制权利要求的范围或含义。

    Wafer level spectrometer
    9.
    发明授权
    Wafer level spectrometer 有权
    晶圆级光谱仪

    公开(公告)号:US09140604B2

    公开(公告)日:2015-09-22

    申请号:US13491442

    申请日:2012-06-07

    摘要: A sensor apparatus for measuring characteristics of optical radiation has a substrate and a low profile spectrally selective detection system located within the substrate at one or more spatially separated locations. The spectrally selective detection system includes a generally laminar array of wavelength selectors optically coupled to a corresponding array of optical detectors. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

    摘要翻译: 用于测量光辐射特性的传感器装置具有位于一个或多个空间分离位置的衬底内的衬底和低剖面光谱选择性检测系统。 光谱选择性检测系统包括光学耦合到相应阵列的光学检测器的波长选择器的大体层流阵列。 要强调的是,该摘要被提供以符合要求抽象的规则,允许搜索者或其他读者快速确定技术公开内容的主题。 提交它的理解是,它不会用于解释或限制权利要求的范围或含义。

    Process condition sensing device and method for plasma chamber
    10.
    发明授权
    Process condition sensing device and method for plasma chamber 有权
    等离子体室的工艺条件检测装置和方法

    公开(公告)号:US08889021B2

    公开(公告)日:2014-11-18

    申请号:US12691695

    申请日:2010-01-21

    申请人: Earl Jensen Mei Sun

    发明人: Earl Jensen Mei Sun

    摘要: A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).

    摘要翻译: 用于测量用于处理工件的等离子体室中的等离子体工艺参数的感测装置可以包括具有嵌入在衬底中的一个或多个传感器的衬底。 基板可以具有由在等离子体室中等离子体处理的与工件基本相同的材料制成的表面。 每个传感器可以包括由与基底表面基本相同的材料制成的收集器部分。 集电器部分包括与衬底的表面平齐的表面。 传感器电子器件嵌入基板并耦合到收集器部分。 当衬底表面暴露于等离子体时,可以用传感器测量由等离子体产生的一个或多个信号。