Field emission type backlight device
    1.
    发明授权
    Field emission type backlight device 失效
    场发射型背光装置

    公开(公告)号:US07525244B2

    公开(公告)日:2009-04-28

    申请号:US11037230

    申请日:2005-01-19

    IPC分类号: H01J1/62

    摘要: A field emission type backlight device with high light efficiency may include a front substrate, a reflective substrate on the front substrate, a rear substrate separated from the front substrate by a predetermined gap, anode electrodes provided with a predetermined gap between them on the rear substrate, a light-emitting layer on the anode electrode, a cathode electrode and a gate electrode spaced apart on the rear substrate between the anode electrodes, and an electron emission source emitting electrons by electric field on the cathode electrode.

    摘要翻译: 具有高光效率的场发射型背光装置可以包括前基板,前基板上的反射基板,与前基板隔开预定间隙的后基板,在后基板上设置有预定间隙的阳极电极 在阳极电极上的发光层,在阳极电极之间的后基板上间隔开的阴极电极和栅极电极以及通过阴极上的电场发射电子的电子发射源。

    Field emission type backlight device
    2.
    发明申请
    Field emission type backlight device 失效
    场发射型背光装置

    公开(公告)号:US20050156506A1

    公开(公告)日:2005-07-21

    申请号:US11037230

    申请日:2005-01-19

    摘要: A field emission type backlight device with high light efficiency may include a front substrate, a reflective substrate on the front substrate, a rear substrate separated from the front substrate by a predetermined gap, anode electrodes provided with a predetermined gap between them on the rear substrate, a light-emitting layer on the anode electrode, a cathode electrode and a gate electrode spaced apart on the rear substrate between the anode electrodes, and an electron emission source emitting electrons by electric field on the cathode electrode.

    摘要翻译: 具有高光效率的场发射型背光装置可以包括前基板,前基板上的反射基板,与前基板隔开预定间隙的后基板,在后基板上设置有预定间隙的阳极电极 在阳极电极上的发光层,在阳极电极之间的后基板上间隔开的阴极电极和栅极电极以及通过阴极上的电场发射电子的电子发射源。

    Method of fabricating field emission array type light emitting unit
    3.
    发明授权
    Method of fabricating field emission array type light emitting unit 有权
    场致发射阵列型发光单元的制造方法

    公开(公告)号:US07851231B2

    公开(公告)日:2010-12-14

    申请号:US11907942

    申请日:2007-10-18

    IPC分类号: H01L21/00

    摘要: A method of fabricating a field emission array type light emitting unit that includes a rear substrate including a plurality of cathodes and a plurality of carbon nanotube emitters on a front side, a front substrate including a plurality of anodes and a phosphor layer on a rear side, wherein the rear substrate and the front substrate are arranged at a distance apart from each other and a plurality of spacers are arranged between the rear substrate and the front substrate, the plurality of spacers being adapted to maintain constant the distance, the method includes producing a diffusion pattern by wet etching a front side of the front substrate.

    摘要翻译: 一种制造场发射阵列型发光单元的方法,该发光阵列型发光单元包括:前表面上包括多个阴极和多个碳纳米管发射体的后基板,包括多个阳极的前基板和背面的荧光体层 其特征在于,所述后基板和所述前基板被配置成彼此间隔开,并且在所述后基板与所述前基板之间配置有多个间隔件,所述多个间隔件适于保持距离恒定,所述方法包括: 通过湿法蚀刻前基板的前侧的扩散图案。

    Method of fabricating field emission array type light emitting unit
    4.
    发明申请
    Method of fabricating field emission array type light emitting unit 有权
    场致发射阵列型发光单元的制造方法

    公开(公告)号:US20080102547A1

    公开(公告)日:2008-05-01

    申请号:US11907942

    申请日:2007-10-18

    IPC分类号: H01L33/00

    摘要: A method of fabricating a field emission array type light emitting unit that includes a rear substrate including a plurality of cathodes and a plurality of carbon nanotube emitters on a front side, a front substrate including a plurality of anodes and a phosphor layer on a rear side, wherein the rear substrate and the front substrate are arranged at a distance apart from each other and a plurality of spacers are arranged between the rear substrate and the front substrate, the plurality of spacers being adapted to maintain constant the distance, the method includes producing a diffusion pattern by wet etching a front side of the front substrate.

    摘要翻译: 一种制造场发射阵列型发光单元的方法,该发光阵列型发光单元包括:前表面上包括多个阴极和多个碳纳米管发射体的后基板,包括多个阳极的前基板和背面的荧光体层 其特征在于,所述后基板和所述前基板被配置成彼此间隔开,并且在所述后基板与所述前基板之间配置有多个间隔件,所述多个间隔件适于保持距离恒定,所述方法包括: 通过湿法蚀刻前基板的前侧的扩散图案。

    GaN film structure, method of fabricating the same, and semiconductor device including the same
    7.
    发明授权
    GaN film structure, method of fabricating the same, and semiconductor device including the same 有权
    GaN膜结构,其制造方法和包括该GaN膜结构的半导体器件

    公开(公告)号:US08791468B2

    公开(公告)日:2014-07-29

    申请号:US13270569

    申请日:2011-10-11

    IPC分类号: H01L27/15

    摘要: A method of fabricating a gallium nitride (GaN) thin layer, by which a high-quality GaN layer may be grown on a large-area substrate using an electrode layer suspended above a substrate, a GaN film structure fabricated using the method, and a semiconductor device including the GaN film structure. The method includes forming a sacrificial layer on a substrate, forming a first buffer layer on the sacrificial layer, forming an electrode layer on the first buffer layer, forming a second buffer layer on the electrode layer, partially etching the sacrificial layer to form at least two support members configured to support the first buffer layer and form at least one air cavity between the substrate and the first buffer layer, and forming a GaN thin layer on the second buffer layer.

    摘要翻译: 一种制造氮化镓(GaN)薄层的方法,通过该方法可以使用悬浮在衬底上的电极层在大面积衬底上生长高质量的GaN层,使用该方法制造的GaN膜结构和 包括GaN膜结构的半导体器件。 该方法包括在衬底上形成牺牲层,在牺牲层上形成第一缓冲层,在第一缓冲层上形成电极层,在电极层上形成第二缓冲层,部分蚀刻牺牲层以形成至少 两个支撑构件被构造成支撑第一缓冲层并在衬底和第一缓冲层之间形成至少一个空气腔,并在第二缓冲层上形成GaN薄层。

    Method of fabricating organic light emitting device
    8.
    发明申请
    Method of fabricating organic light emitting device 审中-公开
    制造有机发光装置的方法

    公开(公告)号:US20090186148A1

    公开(公告)日:2009-07-23

    申请号:US12219219

    申请日:2008-07-17

    IPC分类号: B05D5/12

    摘要: In a method of forming a pattern of an organic light emitting device (OLED), an organic material is evaporated in a predetermined pattern by using a pre-patterned heating element, and the evaporated organic material is transferred to a substrate where the OLED is formed. The method includes preparing a template having a heating element in a pattern corresponding to a multilayered structure of an OLED including a plurality of functional layers; forming an organic layer on the heating element; drawing a substrate for the OLED near to the heating element of the template; and transferring the organic layer on the heating element to the substrate by evaporating the organic layer using the heating element.

    摘要翻译: 在形成有机发光器件(OLED)的图案的方法中,通过使用预先图案化的加热元件以预定图案蒸发有机材料,并将蒸发的有机材料转移到形成有OLED的基板 。 该方法包括制备具有对应于包括多个功能层的OLED的多层结构的图案的加热元件的模板; 在加热元件上形成有机层; 在模板的加热元件附近绘制用于OLED的衬底; 并且通过使用加热元件蒸发有机层,将加热元件上的有机层转移到基板。

    Field emission device
    9.
    发明授权
    Field emission device 失效
    场发射装置

    公开(公告)号:US06927534B2

    公开(公告)日:2005-08-09

    申请号:US10635647

    申请日:2003-08-07

    摘要: A field emission device (FED) and a method for fabricating the FED are provided. The FED includes micro-tips with nano-sized surface features, and a focus gate electrode over a gate electrode, wherein one or more gates of the gate electrode is exposed through a single opening of the focus gate electrode. In the FED, occurrence of arcing is suppressed. Although an arcing occurs in the FED, damage of a cathode and a resistor layer is prevented, so that a higher working voltage can be applied to the anode. Also, due to the micro-tips with nano-sized surface features, the emission current density of the FED increases, so that a high-brightness display can be achieved with the FED. The gate turn-on voltage can be lowered due to the micro-tip as a collection of nano-sized tips, thereby reducing power consumption.

    摘要翻译: 提供场发射装置(FED)和制造FED的方法。 FED包括具有纳米尺寸表面特征的微型尖端以及栅电极上的聚焦栅电极,其中栅电极的一个或多个栅极通过聚焦栅电极的单个开口露出。 在FED中,电弧的发生被抑制。 虽然在FED中发生电弧,但是可以防止阴极和电阻层的损坏,从而可以向阳极施加较高的工作电压。 此外,由于具有纳米尺寸表面特征的微尖端,FED的发射电流密度增加,从而可以用FED实现高亮度显示。 由于微型尖端作为纳米级尖端的集合,可以降低栅极导通电压,从而降低功耗。

    Electronic device, field effect transistor including the electronic device, and method of manufacturing the electronic device and the field effect transistor
    10.
    发明授权
    Electronic device, field effect transistor including the electronic device, and method of manufacturing the electronic device and the field effect transistor 有权
    包括电子器件的电子器件,场效应晶体管,以及制造电子器件和场效应晶体管的方法

    公开(公告)号:US07576355B2

    公开(公告)日:2009-08-18

    申请号:US11896910

    申请日:2007-09-06

    IPC分类号: H01L29/06

    摘要: Provided is an electronic device, a field effect transistor having the electronic device, and a method of manufacturing the electronic device and the field effect transistor. The electronic device includes: a substrate; a first electrode and a second electrode which are formed in parallel to each other on the substrate, each of the first electrode and the second electrode comprising two electrode pads separated from each other and a heating element that connect the two electrode pads; a catalyst metal layer formed on the heating element of the first electrode; and a carbon nanotube connected to the second electrode by horizontally growing from the catalyst metal layer; wherein the heating elements are separated from the substrate by etching the substrate under the heating elements of the first and the second electrodes.

    摘要翻译: 提供一种具有电子器件的电子器件,场效应晶体管,以及制造该电子器件和场效应晶体管的方法。 电子装置包括:基板; 在所述基板上彼此平行地形成的第一电极和第二电极,所述第一电极和所述第二电极中的每一个包括彼此分离的两个电极焊盘和连接所述两个电极焊盘的加热元件; 形成在第一电极的加热元件上的催化剂金属层; 以及通过从所述催化剂金属层水平生长而与所述第二电极连接的碳纳米管; 其中所述加热元件通过在所述第一和第二电极的加热元件下蚀刻所述基板而与所述基板分离。