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    Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
    1.
    发明授权
    Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory 有权
    具有垂直磁各向异性的磁性堆叠，用于自旋动量传递磁阻随机存取存储器

    公开(公告)号：US08866207B2

    公开(公告)日：2014-10-21

    申请号：US13602533

    申请日：2012-09-04

    申请人： Guohan Hu ,  Janusz J. Nowak ,  Philip L. Trouilloud ,  Daniel C. Worledge

    发明人： Guohan Hu ,  Janusz J. Nowak ,  Philip L. Trouilloud ,  Daniel C. Worledge

    IPC分类号： G11B5/39 ,  H01L43/08 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12

    CPC分类号： G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

    摘要： A magnetic tunnel junction (MTJ) includes a magnetic free layer, having a variable magnetization direction; an insulating tunnel barrier located adjacent to the free layer; a magnetic fixed layer having an invariable magnetization direction, the fixed layer disposed adjacent the tunnel barrier such that the tunnel barrier is located between the free layer and the fixed layer, wherein the free layer and the fixed layer have perpendicular magnetic anisotropy; and one or more of: a composite fixed layer, the composite fixed layer comprising a dusting layer, a spacer layer, and a reference layer; a synthetic antiferromagnetic (SAF) fixed layer structure, the SAF fixed layer structure comprising a SAF spacer located between the fixed layer and a second fixed magnetic layer; and a dipole layer, wherein the free layer is located between the dipole layer and the tunnel barrier.

    摘要翻译： 磁性隧道结（MTJ）包括具有可变磁化方向的无磁性层; 位于邻近自由层的绝缘隧道屏障; 具有不变磁化方向的磁性固定层，所述固定层邻近所述隧道势垒设置，使得所述隧道势垒位于所述自由层和所述固定层之间，其中所述自由层和所述固定层具有垂直的磁各向异性; 以及复合固定层中的一个或多个，所述复合固定层包括除尘层，间隔层和参考层; 合成反铁磁（SAF）固定层结构，SAF固定层结构包括位于固定层和第二固定磁性层之间的SAF间隔物; 和偶极子层，其中自由层位于偶极层和隧道势垒之间。

    Reference cells for spin torque based memory device
    4.
    发明授权
    Reference cells for spin torque based memory device 失效
    用于基于旋转扭矩的存储器件的参考单元

    公开(公告)号：US08370714B2

    公开(公告)日：2013-02-05

    申请号：US12684486

    申请日：2010-01-08

    申请人： John K. DeBrosse ,  Daniel C. Worledge

    发明人： John K. DeBrosse ,  Daniel C. Worledge

    IPC分类号： G11C29/00 ,  G11C11/00

    CPC分类号： G06F11/1048 ,  H03M13/13

    摘要： A method of reading and correcting data within a memory device that includes reading each data bit of a data word using a plurality of reference cells corresponding to each data bit, performing error detection on the read data bits, and correcting a read data bit when an error is detected using error correction code (ECC) and writing each corresponding reference cells to an original memory state thereof.

    摘要翻译： 一种在存储器件内读取和校正数据的方法，包括使用与每个数据位对应的多个参考单元读取数据字的每个数据位，对读取的数据位进行错误检测，以及当读取的数据位在 使用纠错码（ECC）检测错误，并将每个对应的参考单元写入其原始存储器状态。

    Data writing to scalable magnetic memory devices
    6.
    发明授权
    Data writing to scalable magnetic memory devices 失效
    数据写入可扩展磁存储器件

    公开(公告)号：US07907440B2

    公开(公告)日：2011-03-15

    申请号：US12119345

    申请日：2008-05-12

    申请人： Daniel C. Worledge

    发明人： Daniel C. Worledge

    IPC分类号： G11C11/00

    CPC分类号： G11C11/16

    摘要： A method is provided for writing data to an MRAM device having a plurality of magnetic memory cells configured in an array between a plurality of word lines and bit lines. At least one of the magnetic memory cells includes at least one fixed magnetic layer and a plurality of free magnetic layers, separated from the fixed magnetic layer by at least one barrier layer. The free magnetic layers include a first free magnetic layer adjacent to the barrier layer, a second free magnetic layer separated from the first free magnetic layer by at least one first parallel coupling layer, and a third free magnetic layer separated from the second free magnetic layer by at least one second parallel coupling layer. A magnetic moment of the second free magnetic layer is greater than both a magnetic moment of the first free magnetic layer and the third free magnetic layer.

    摘要翻译： 提供了一种用于将数据写入具有以多个字线和位线之间的阵列配置的多个磁存储单元的MRAM装置的方法。 至少一个磁存储单元包括至少一个固定磁性层和多个自由磁性层，它们通过至少一个阻挡层与固定磁性层分离。 自由磁性层包括与阻挡层相邻的第一自由磁性层，通过至少一个第一平行耦合层与第一自由磁性层分离的第二自由磁性层和与第二自由磁性层分离的第三自由磁性层 通过至少一个第二平行耦合层。 第二自由磁性层的磁矩大于第一自由磁性层和第三自由磁性层的磁矩。

    Techniques for coupling in semiconductor devices
    7.
    发明授权
    Techniques for coupling in semiconductor devices 有权
    半导体器件耦合技术

    公开(公告)号：US07893470B2

    公开(公告)日：2011-02-22

    申请号：US11338401

    申请日：2006-01-24

    申请人： Daniel C. Worledge

    发明人： Daniel C. Worledge

    IPC分类号： H01L29/94

    CPC分类号： B82Y25/00 ,  H01F10/3227 ,  H01L43/08

    摘要： Techniques for exchange coupling of magnetic layers in semiconductor devices are provided. In one aspect, a semiconductor device is provided. The device comprises at least two magnetic layers, and a spacer layer formed between the magnetic layers, the spacer layer being configured to provide ferromagnetic exchange coupling between the layers, the magnetic layers experiencing anti-ferromagnetic dipole coupling, such that a net coupling of the magnetic layers is anti-ferromagnetic in a zero applied magnetic field. The semiconductor device may comprise magnetic random access memory (MRAM). In another aspect, a method for coupling magnetic layers in a semiconductor device comprising at least two magnetic layers and a spacer layer therebetween, the method comprises the following step. Ferromagnetic exchange coupling is provided of the magnetic layers, the magnetic layers experiencing anti-ferromagnetic dipole coupling, such that a net coupling of the magnetic layers is anti-ferromagnetic in a zero applied magnetic field.

    摘要翻译： 提供了用于半导体器件中磁层的交换耦合的技术。 一方面，提供一种半导体器件。 所述器件包括至少两个磁性层和形成在所述磁性层之间的间隔层，所述间隔层被配置为在所述层之间提供铁磁交换耦合，所述磁层经历反铁磁偶极耦合，使得所述磁耦合 磁性层在零施加磁场中具有反铁磁性。 半导体器件可以包括磁随机存取存储器（MRAM）。 在另一方面，一种用于在包括至少两个磁性层和间隔层之间的半导体器件中耦合磁性层的方法，该方法包括以下步骤。 铁磁交换耦合由磁层提供，磁层经历反铁磁偶极耦合，使得磁层的网络耦合在零施加的磁场中具有反铁磁性。

    Scalable Magnetic Memory Devices
    8.
    发明申请
    Scalable Magnetic Memory Devices 有权
    可扩展磁存储器件

    公开(公告)号：US20080259674A1

    公开(公告)日：2008-10-23

    申请号：US12119326

    申请日：2008-05-12

    申请人： Daniel C. Worledge

    发明人： Daniel C. Worledge

    IPC分类号： G11C11/00 ,  H01L29/82

    CPC分类号： G11C11/16

    摘要： A magnetic memory cell is provided. The magnetic memory cell includes at least one fixed magnetic layer, and a plurality of free magnetic layers, separated from the at least one fixed magnetic layer by at least one barrier layer. The free magnetic layers include a first free magnetic layer adjacent to the barrier layer, a second free magnetic layer separated from the first free magnetic layer by at least one first parallel coupling layer, and a third free magnetic layer separated from the second free magnetic layer by at least one second parallel coupling layer. A magnetic moment of the second free magnetic layer is greater than both a magnetic moment of the first free magnetic layer and a magnetic moment of the third free magnetic layer. The magnetic memory cell may be used in conjunction with a magnetic random access memory device.

    摘要翻译： 提供磁存储单元。 磁存储单元包括至少一个固定磁性层和多个自由磁性层，它们通过至少一个阻挡层与至少一个固定磁性层分离。 自由磁性层包括与阻挡层相邻的第一自由磁性层，通过至少一个第一平行耦合层与第一自由磁性层分离的第二自由磁性层和与第二自由磁性层分离的第三自由磁性层 通过至少一个第二平行耦合层。 第二自由磁性层的磁矩大于第一自由磁性层的磁矩和第三自由磁性层的磁矩。 磁存储单元可以与磁性随机存取存储器件一起使用。

    Techniques for spin-flop switching with offset field
    9.
    发明授权
    Techniques for spin-flop switching with offset field 失效
    具有偏移场的自旋转换器切换技术

    公开(公告)号：US07274057B2

    公开(公告)日：2007-09-25

    申请号：US10831839

    申请日：2004-04-26

    申请人： Daniel C. Worledge

    发明人： Daniel C. Worledge

    IPC分类号： H01L29/76

    CPC分类号： B82Y25/00 ,  H01F10/3281 ,  H01F41/303 ,  H01L43/08

    摘要： Techniques for reducing switching fields in semiconductor devices are provided. In one aspect, a semiconductor device comprising at least a first magnetic layer and a second magnetic layer with a spacer layer therebetween is provided. The semiconductor device is configured such that a thickness of at least one of the first magnetic layer and the second magnetic layer maintains a desired activation energy of the semiconductor device in the presence of an applied offsetting magnetic field. A method of reducing a switching field of a semiconductor device having at least a first magnetic layer and a second magnetic layer with a spacer layer therebetween is also provided.

    摘要翻译： 提供了用于减少半导体器件中的开关场的技术。 在一个方面中，提供了包括至少第一磁性层和在其间具有间隔层的第二磁性层的半导体器件。 半导体器件被配置为使得在存在施加的偏移磁场的情况下，第一磁性层和第二磁性层中的至少一个的厚度保持半导体器件的期望的激活能。 还提供了一种减少具有至少第一磁性层的半导体器件的切换场和在其间具有间隔层的第二磁性层的方法。

    Magnetic tunnel junction devices having magnetic layers formed on composite, obliquely deposited seed layers
    10.
    发明授权
    Magnetic tunnel junction devices having magnetic layers formed on composite, obliquely deposited seed layers 有权
    具有形成在复合的倾斜沉积种子层上的磁性层的磁性隧道结装置

    公开(公告)号：US08912614B2

    公开(公告)日：2014-12-16

    申请号：US13294287

    申请日：2011-11-11

    申请人： Francesco A. Vetrò ,  Daniel C. Worledge

    发明人： Francesco A. Vetrò ,  Daniel C. Worledge

    IPC分类号： H01L29/82 ,  H01L21/00 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

    摘要： Semiconductor stack structures such as magnetic tunnel junction structures having a magnetic free layer that is grown on composite, obliquely deposited seed layers to induce an increased in-plane magnetic anisotropy Hk of the magnetic free layer. In one aspect, a semiconductor device includes a composite seed layer formed on a substrate, and a magnetic layer formed on the composite seed layer. The composite seed layer includes a first seed layer obliquely formed with an incident angle from a surface normal of the substrate along a first direction of the substrate, and a second seed layer obliquely formed with the incident angle on the first seed layer along a second direction of the substrate, opposite the first direction.

    摘要翻译： 半导体堆叠结构，例如具有磁性自由层的磁性隧道结结构，其生长在复合的倾斜沉积的种子层上，以引起磁性层的面内磁各向异性Hk的增加。 一方面，半导体器件包括形成在衬底上的复合晶种层和形成在复合晶种层上的磁性层。 所述复合种子层包括沿着所述基板的第一方向从所述基板的表面法线倾斜地形成的入射角的第一种子层，以及沿所述第一种子层沿着第二方向倾斜地形成有所述入射角的第二籽晶层 的基板，与第一方向相反。