Abstract:
A heat pipe includes a step pipe, a mesh, and a supporting component. The step pipe has an evaporating section and two condensing sections. The condensing sections are on the two ends of the step pipe, respectively. The evaporating section lies between the two condensing sections. The inner spaces of the two condensing sections and the evaporating section are interconnected. The peripheral dimension of the evaporating section is larger than the peripheral dimension of each of the condensing sections. The mesh is contained in the step pipe and located inside the evaporating section. The supporting component is contained in the step pipe and wrapped in the mesh. The combination of these structures increases air's flow rate inside the heat pipe and improves the heat pipe's heat conduction efficiency.
Abstract:
The heat pipe of the invention includes an evaporation section and two condensation sections. The evaporation section is located at a part of the heat pipe. The two condensation sections are separately located at two opposite sides of the evaporation section. The evaporation section and the two condensation sections communicate with each other, and a peripheral size of the evaporation section is larger than that of each of the condensation sections.
Abstract:
A heat pipe includes a step pipe, a mesh, and a supporting component. The step pipe has an evaporating section and two condensing sections. The condensing sections are on the two ends of the step pipe, respectively. The evaporating section lies between the two condensing sections. The inner spaces of the two condensing sections and the evaporating section are interconnected. The peripheral dimension of the evaporating section is larger than the peripheral dimension of each of the condensing sections. The mesh is contained in the step pipe and located inside the evaporating section and the condensing sections. The supporting component is contained in the step pipe and wrapped in the mesh. The combination of these structures increases air's flow rate inside the heat pipe and improves the heat pipe's heat conduction efficiency.
Abstract:
A heat pipe includes a step pipe and a sintered powder structure. The inner wall of the step pipe has a plurality of grooves. The step pipe has an evaporating section and two condensing sections. The condensing sections are on the two ends of the step pipe, respectively. The evaporating section lies between the two condensing sections. The inner spaces of the two condensing sections and the evaporating section are interconnected. The peripheral dimension of the evaporating section is larger than the peripheral dimension of each of the condensing sections. The sintered powder structure is bounded inside each of the condensing sections, improving the heat pipe's inner air flow rate and heat conduction efficiency.
Abstract:
A method for enclosing a heat pipe with metal is disclosed. The method includes the steps of: a) providing a tube made of a metal; b) putting the heat pipe in a hollow of the tube; and c) stretching the tube to shrink an inner diameter of the tube for tightly enclosing the heat pipe.
Abstract:
A method includes forming a gate stack over a semiconductor substrate, wherein the gate stack includes a gate dielectric and a gate electrode over the gate dielectric. A portion of the semiconductor substrate adjacent to the gate stack is recessed to form a recess. A semiconductor region is epitaxially grown in the recess. The semiconductor region is implanted with a p-type impurity or an n-type impurity. A dry treatment is performed on the semiconductor region.
Abstract:
The flattened heat pipe includes a flattened tube, a first wick structure, a second wick structure and a working fluid. The flattened tube has an annular wall and a chamber formed within the annular wall. The first wick structure is disposed on a portion of the annular wall. The second wick structure is disposed on another portion of the annular wall, and not overlapping with each other. The working fluid is filled in the chamber.
Abstract:
A method includes forming a gate stack over a semiconductor substrate, wherein the gate stack includes a gate dielectric and a gate electrode over the gate dielectric. A portion of the semiconductor substrate adjacent to the gate stack is recessed to form a recess. A semiconductor region is epitaxially grown in the recess. The semiconductor region is implanted with a p-type impurity or an n-type impurity. A dry treatment is performed on the semiconductor region.
Abstract:
A folding vapor chamber includes folding boards engaged and covered with one another, a folding edge formed between the adjacent folding boards and provided for connecting the folding boards integrally, and the adjacent folding boards being bent and folded by the corresponding folding edge and engaged with one another, and a capillary tissue installed at an internal surface between the folding boards. The casing is formed by the folding edge to reduce the length of the sealing edge of the vapor chamber, so as to achieve the effects of lowering the defective rate of the edge sealing operation, and preventing the sealing edge from being cracked easily.