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1.发明授权公开(公告)号：US07972751B2
公开(公告)日：2011-07-05
申请号：US12097381
申请日：2006-12-04
摘要： The invention relates to an extreme ultraviolet photolithography mask, operating in reflection, the mask comprising a substrate, a mirror structure deposited uniformly on the substrate, and an absorbent layer which is absorbent at the operating wavelength of the mask and is deposited on top of the mirror structure and etched in a desired masking pattern. The absorbent layer contains indium among its principal constituents.
摘要翻译： 本发明涉及一种反射操作的极紫外光刻掩模，该掩模包括基底，均匀地沉积在基底上的反射镜结构，以及吸收层，该吸收层在掩模的工作波长处被吸收并沉积在掩模的顶部 反射镜结构并以期望的掩模图案蚀刻。 吸收层的主要成分含有铟。
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公开(公告)号：US20070292772A1
公开(公告)日：2007-12-20
申请号：US11665312
申请日：2005-10-19
IPC分类号： G03F1/14
摘要： The invention relates to a reflection lithography mask comprising, on a substrate (S), a reflector coating (RC) and a stack comprised of an etching barrier layer and an absorbing layer, said stack covering only a part of the reflector coating. The absorbing layer is made solely of dielectric material and constitutes the surface layer of the mask. Advantageously, this dielectric material is HfO2. Said material makes it possible to reduce the thickness of the mask pattern and as a result to decrease the shadow region (Z) during mask exposure. The invention applies to reflection lithography.
摘要翻译： 本发明涉及一种反射光刻掩模，其包括在基板（S）上，反射器涂层（RC）和由蚀刻阻挡层和吸收层组成的叠层，所述堆叠仅覆盖反射器涂层的一部分。 吸收层仅由电介质材料制成，并构成掩模的表面层。 有利地，该电介质材料是HfO 2。 所述材料使得可以减小掩模图案的厚度，并且因此在掩模曝光期间减少阴影区域（Z）。 本发明适用于反射光刻。
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3.发明申请公开(公告)号：US20130256776A1
公开(公告)日：2013-10-03
申请号：US13852504
申请日：2013-03-28
IPC分类号： H01L29/788 , H01L21/28
CPC分类号： H01L29/788 , G11C16/0425 , G11C16/0466 , H01L21/28273 , H01L21/28282 , H01L27/11568 , H01L29/42344 , H01L29/66833 , H01L29/7881
摘要： An electronic memory cell includes a first selection transistor gate surmounting a first part of the channel and a lateral spacer disposed against a lateral flank of the selection transistor gate, a part of the lateral spacer forming a memory transistor gate surmounting a second part of the channel. The memory transistor gate includes a stack of the ONO type and a conductive zone including a lateral face inclined at an angle α strictly between 0 and 90° with respect to the plane of the substrate.
摘要翻译： 电子存储单元包括跨越沟道的第一部分的第一选择晶体管栅极和抵靠选择晶体管栅极的侧面设置的横向间隔件，横向间隔物的形成存储晶体管栅极的一部分跨越通道的第二部分 。 存储晶体管栅极包括ONO类型的叠层和导电区域，该导电区域包括相对于衬底的平面以0至90°之间的α角倾斜的侧面。
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4.发明授权Method for making a reflection lithographic mask and mask obtained by said method 有权用于制造通过所述方法获得的反射光刻掩模和掩模的方法公开(公告)号：US07923177B2
公开(公告)日：2011-04-12
申请号：US12097362
申请日：2006-12-04
IPC分类号： G03F1/00
摘要： The invention relates to a process for fabricating an extreme ultraviolet photolithography mask operating in reflection, comprising a substrate, a mirror structure (uniformly deposited on the substrate, and an absorbent element forming a pattern deposited on the mirror structure, characterized in that the absorbent element is obtained by the irradiation and then development of an organometallic resist layer deposited on the mirror structure.
摘要翻译： 本发明涉及一种用于制造反射操作的极紫外光刻掩模的方法，其包括基底，反射镜结构（均匀地沉积在基底上，以及形成沉积在反射镜结构上的图案的吸收元件，其特征在于吸收元件 通过照射然后显影沉积在镜面结构上的有机金属抗蚀剂层获得。
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5.发明授权公开(公告)号：US08836014B2
公开(公告)日：2014-09-16
申请号：US13852504
申请日：2013-03-28
IPC分类号： H01L21/70 , H01L29/78 , H01L29/76 , H01L21/02 , H01L29/788 , H01L29/423 , H01L21/28 , G11C16/04 , H01L29/66 , H01L27/115
CPC分类号： H01L29/788 , G11C16/0425 , G11C16/0466 , H01L21/28273 , H01L21/28282 , H01L27/11568 , H01L29/42344 , H01L29/66833 , H01L29/7881
摘要： An electronic memory cell includes a first selection transistor gate surmounting a first part of the channel and a lateral spacer disposed against a lateral flank of the selection transistor gate, a part of the lateral spacer forming a memory transistor gate surmounting a second part of the channel. The memory transistor gate includes a stack of the ONO type and a conductive zone including a lateral face inclined at an angle α strictly between 0 and 90° with respect to the plane of the substrate.
摘要翻译： 电子存储单元包括跨越沟道的第一部分的第一选择晶体管栅极和抵靠选择晶体管栅极的侧面设置的横向间隔件，横向间隔物的形成存储晶体管栅极的一部分跨越通道的第二部分 。 存储晶体管栅极包括ONO型的叠层和导电区域，导电区域包括相对于衬底的平面严格地在0和90°之间的角度α倾斜的侧面。
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6.发明申请METHOD FOR MAKING A REFLECTION LITHOGRAPHIC MASK AND MASK OBTAINED BY SAID METHOD 有权用于制作反射光刻掩模的方法和由方法获得的掩模公开(公告)号：US20090269678A1
公开(公告)日：2009-10-29
申请号：US12097362
申请日：2006-12-04
IPC分类号： G03F1/00
摘要： The invention relates to a process for fabricating an extreme ultraviolet photolithography mask operating in reflection, comprising a substrate, a mirror structure (uniformly deposited on the substrate, and an absorbent element forming a pattern deposited on the mirror structure, characterized in that the absorbent element is obtained by the irradiation and then development of an organometallic resist layer deposited on the mirror structure.
摘要翻译： 本发明涉及一种用于制造反射操作的极紫外光刻掩模的方法，其包括基底，反射镜结构（均匀地沉积在基底上，以及形成沉积在反射镜结构上的图案的吸收元件，其特征在于吸收元件 通过照射然后显影沉积在镜面结构上的有机金属抗蚀剂层获得。
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7.发明申请公开(公告)号：US20090191469A1
公开(公告)日：2009-07-30
申请号：US12097381
申请日：2006-12-04
IPC分类号： G03F1/00
摘要： The invention relates to an extreme ultraviolet photolithography mask, operating in reflection, the mask comprising a substrate, a mirror structure deposited uniformly on the substrate, and an absorbent layer which is absorbent at the operating wavelength of the mask and is deposited on top of the mirror structure and etched in a desired masking pattern. The absorbent layer contains indium among its principal constituents.
摘要翻译： 本发明涉及一种反射操作的极紫外光刻掩模，该掩模包括基底，均匀地沉积在基底上的反射镜结构，以及吸收层，该吸收层在掩模的工作波长处被吸收并沉积在掩模的顶部 反射镜结构并以期望的掩模图案蚀刻。 吸收层的主要成分含有铟。
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公开(公告)号：US07745070B2
公开(公告)日：2010-06-29
申请号：US11665312
申请日：2005-10-19
IPC分类号： G03F1/00
摘要： The invention relates to a reflection lithography mask comprising, on a substrate (S), a reflector coating (RC) and a stack comprised of an etching barrier layer and an absorbing layer, said stack covering only a part of the reflector coating. The absorbing layer is made solely of dielectric material and constitutes the surface layer of the mask. Advantageously, this dielectric material is HfO2. Said material makes it possible to reduce the thickness of the mask pattern and as a result to decrease the shadow region (Z) during mask exposure. The invention applies to reflection lithography.
摘要翻译： 本发明涉及一种反射光刻掩模，其包括在基板（S）上，反射器涂层（RC）和由蚀刻阻挡层和吸收层组成的叠层，所述堆叠仅覆盖反射器涂层的一部分。 吸收层仅由电介质材料制成，并构成掩模的表面层。 有利地，该介电材料是HfO 2。 所述材料使得可以减小掩模图案的厚度，并且因此在掩模曝光期间减少阴影区域（Z）。 本发明适用于反射光刻。
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