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    Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere
    3.
    发明授权
    Thermal annealing method for preventing defects in doped silicon oxide surfaces during exposure to atmosphere 失效
    用于防止在暴露于大气中的掺杂氧化硅表面中的缺陷的热退火方法

    公开(公告)号：US07977246B2

    公开(公告)日：2011-07-12

    申请号：US12173279

    申请日：2008-07-15

    申请人： Haichun Yang ,  Chien-Teh Kao ,  Xinliang Lu ,  Mei Chang

    发明人： Haichun Yang ,  Chien-Teh Kao ,  Xinliang Lu ,  Mei Chang

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3105 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828

    摘要： A thermal anneal process for preventing formation of certain BPSG surface defects following an etch or silicon clean step using a fluorine and hydrogen chemistry. The thermal anneal process is carried out while protecting the wafer from moisture, by heating the wafer to a sufficiently high temperature for a sufficient duration of time to thermally diffuse boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer into the bulk of the layer. The thermal anneal process is completed by cooling the wafer to a sufficiently low temperature to fix the distribution of the boron and/or phosphorus materials in bulk of the doped glass layer.

    摘要翻译： 用于防止在使用氟和氢化学的蚀刻或硅清洁步骤之后形成某些BPSG表面缺陷的热退火工艺。 在保护晶片免受湿气的同时，通过将晶片加热到足够高的温度持续足够的时间以将从掺杂的玻璃层表面附近的硅分离的硼和/或磷材料热扩散到热，从而进行热退火处理，以将硼和/或磷材料热扩散到 大部分的层。 通过将晶片冷却到足够低的温度以固定硼和/或磷材料在掺杂的玻璃层的大部分中的分布来完成热退火工艺。

    THERMAL ANNEALING METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE
    4.
    发明申请
    THERMAL ANNEALING METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE 失效
    用于防止暴露于大气中的氧化铝表面缺陷的热退火方法

    公开(公告)号：US20090269930A1

    公开(公告)日：2009-10-29

    申请号：US12173279

    申请日：2008-07-15

    申请人： Haichun Yang ,  Chien-Teh Kao ,  Xinliang Lu ,  Mei Chang

    发明人： Haichun Yang ,  Chien-Teh Kao ,  Xinliang Lu ,  Mei Chang

    IPC分类号： H01L21/3105

    CPC分类号： H01L21/3105 ,  H01L21/02063 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76828

    摘要： A thermal anneal process for preventing formation of certain BPSG surface defects following an etch or silicon clean step using a fluorine and hydrogen chemistry. The thermal anneal process is carried out while protecting the wafer from moisture, by heating the wafer to a sufficiently high temperature for a sufficient duration of time to thermally diffuse boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer into the bulk of the layer. The thermal anneal process is completed by cooling the wafer to a sufficiently low temperature to fix the distribution of the boron and/or phosphorus materials in bulk of the doped glass layer.

    摘要翻译： 用于防止在使用氟和氢化学的蚀刻或硅清洁步骤之后形成某些BPSG表面缺陷的热退火工艺。 在保护晶片免受湿气的同时，通过将晶片加热到足够高的温度持续足够的时间以将从掺杂的玻璃层表面附近的硅分离的硼和/或磷材料热扩散到热，从而进行热退火处理，以将硼和/或磷材料热扩散到 大部分的层。 通过将晶片冷却到足够低的温度以固定硼和/或磷材料在掺杂的玻璃层的大部分中的分布来完成热退火工艺。

    Selective etching of silicon nitride
    6.
    发明授权
    Selective etching of silicon nitride 失效
    选择性蚀刻氮化硅

    公开(公告)号：US08252696B2

    公开(公告)日：2012-08-28

    申请号：US12247059

    申请日：2008-10-07

    申请人： Xinliang Lu ,  Haichun Yang ,  Zhenbin Ge ,  Nan Lu ,  David T. Or ,  Chien-Teh Kao ,  Mei Chang

    发明人： Xinliang Lu ,  Haichun Yang ,  Zhenbin Ge ,  Nan Lu ,  David T. Or ,  Chien-Teh Kao ,  Mei Chang

    IPC分类号： H01L21/302

    CPC分类号： H01L21/31116

    摘要： Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.

    摘要翻译： 本文提供了用于蚀刻包含硅和氮的电介质层的方法。 在一些实施例中，这样的方法可以包括提供具有介于其上的硅和氮的电介质层的衬底，使用远程等离子体从包括氢（H 2）和三氟化氮（NF 3）的工艺气体形成反应物种; 并使用反应性物质蚀刻介电层。 在一些实施例中，氧化物层邻近电介质层设置。 在一些实施方案中，可以调节处理气体的流速比，使得介电层与氧化物层或基底中的至少一个的蚀刻选择性在约0.8至约4之间。

    PASSIVATION LAYER FORMATION BY PLASMA CLEAN PROCESS TO REDUCE NATIVE OXIDE GROWTH
    9.
    发明申请
    PASSIVATION LAYER FORMATION BY PLASMA CLEAN PROCESS TO REDUCE NATIVE OXIDE GROWTH 有权
    通过等离子体清洗方法形成的钝化层减少原生氧化物生长

    公开(公告)号：US20080160210A1

    公开(公告)日：2008-07-03

    申请号：US11962791

    申请日：2007-12-21

    申请人： Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

    发明人： Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

    IPC分类号： C23F17/00 ,  C22F1/00

    CPC分类号： H01L21/02068 ,  H01L21/31116 ,  H01L21/76224 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/78

    摘要： Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80° C. or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100° C. or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.

    摘要翻译： 本文描述的实施例提供了用于去除衬底上的自然氧化物表面同时钝化下面的衬底表面的方法。 在一个实施例中，提供了一种方法，其包括将包含氧化物层的衬底定位在处理室内，将衬底的第一温度调节至约80℃或更低，从处理室内的气体混合物产生清洁等离子体 使得气体混合物含有NH 3/3N 3 N 3摩尔比为约10或更大的氨和三氟化氮，并将清洗等离子体冷凝到基底上。 含有六氟硅酸铵的薄膜在等离子体清洁过程中部分地由天然氧化物形成。 该方法还包括在处理室内加热衬底至约100℃或更高的第二温度，同时从衬底上移除薄膜并在其上形成钝化表面。

    Passivation layer formation by plasma clean process to reduce native oxide growth
    10.
    发明授权
    Passivation layer formation by plasma clean process to reduce native oxide growth 有权
    通过等离子体清洁工艺形成钝化层以减少自然氧化物生长

    公开(公告)号：US07780793B2

    公开(公告)日：2010-08-24

    申请号：US11962791

    申请日：2007-12-21

    申请人： Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

    发明人： Haichun Yang ,  Xinliang Lu ,  Chien-Teh Kao ,  Mei Chang

    IPC分类号： B08B6/00

    CPC分类号： H01L21/02068 ,  H01L21/31116 ,  H01L21/76224 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/78

    摘要： Embodiments described herein provide methods for removing native oxide surfaces on substrates while simultaneously passivating the underlying substrate surface. In one embodiment, a method is provided which includes positioning a substrate containing an oxide layer within a processing chamber, adjusting a first temperature of the substrate to about 80° C. or less, generating a cleaning plasma from a gas mixture within the processing chamber, such that the gas mixture contains ammonia and nitrogen trifluoride having an NH3/NF3 molar ratio of about 10 or greater, and condensing the cleaning plasma onto the substrate. A thin film, containing ammonium hexafluorosilicate, is formed in part, from the native oxide during a plasma clean process. The method further includes heating the substrate to a second temperature of about 100° C. or greater within the processing chamber while removing the thin film from the substrate and forming a passivation surface thereon.

    摘要翻译： 本文描述的实施例提供了用于去除衬底上的自然氧化物表面同时钝化下面的衬底表面的方法。 在一个实施例中，提供了一种方法，其包括将包含氧化物层的衬底定位在处理室内，将衬底的第一温度调节至约80℃或更低，从处理室内的气体混合物产生清洁等离子体 使得气体混合物含有NH 3 / NF 3摩尔比为约10或更大的氨和三氟化氮，并将清洗等离子体冷凝到基材上。 含有六氟硅酸铵的薄膜在等离子体清洁过程中部分地由天然氧化物形成。 该方法还包括在处理室内加热衬底至约100℃或更高的第二温度，同时从衬底上移除薄膜并在其上形成钝化表面。