Selective etching of silicon nitride
    2.
    发明授权
    Selective etching of silicon nitride 失效
    选择性蚀刻氮化硅

    公开(公告)号:US08252696B2

    公开(公告)日:2012-08-28

    申请号:US12247059

    申请日:2008-10-07

    IPC分类号: H01L21/302

    CPC分类号: H01L21/31116

    摘要: Methods for etching dielectric layers comprising silicon and nitrogen are provided herein. In some embodiments, such methods may include providing a substrate having a dielectric layer comprising silicon and nitrogen disposed thereon, forming reactive species from a process gas comprising hydrogen (H2) and nitrogen trifluoride (NF3) using a remote plasma; and etching the dielectric layer using the reactive species. In some embodiments, an oxide layer is disposed adjacent to the dielectric layer. In some embodiments, the flow rate ratio of the process gas can be adjusted such that an etch selectivity of the dielectric layer to at least one of the oxide layer or the substrate is between about 0.8 to about 4.

    摘要翻译: 本文提供了用于蚀刻包含硅和氮的电介质层的方法。 在一些实施例中,这样的方法可以包括提供具有介于其上的硅和氮的电介质层的衬底,使用远程等离子体从包括氢(H 2)和三氟化氮(NF 3)的工艺气体形成反应物种; 并使用反应性物质蚀刻介电层。 在一些实施例中,氧化物层邻近电介质层设置。 在一些实施方案中,可以调节处理气体的流速比,使得介电层与氧化物层或基底中的至少一个的蚀刻选择性在约0.8至约4之间。

    Integration sequences with top surface profile modification
    5.
    发明授权
    Integration sequences with top surface profile modification 失效
    具有顶面轮廓修改的积分序列

    公开(公告)号:US08043933B2

    公开(公告)日:2011-10-25

    申请号:US12620806

    申请日:2009-11-18

    IPC分类号: H01L21/76

    摘要: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.

    摘要翻译: 本发明的实施例一般涉及用于处理半导体衬底的装置和方法。 特别地,本发明的实施例涉及用于形成具有具有圆形底部的凹部的浅沟槽隔离的装置和方法。 本发明的一个实施例包括通过从填充的沟槽结构中去除一部分材料并且使凹部的圆角底部倒圆,在填充的沟槽结构中形成凹陷。 通过将填充在沟槽结构中的相同材料的共形层沉积在衬底上并且从凹部的侧壁去除材料的共形层来进行圆角底角。

    Method and apparatus for trench and via profile modification
    6.
    发明授权
    Method and apparatus for trench and via profile modification 有权
    沟槽和通孔型材修改的方法和装置

    公开(公告)号:US07994002B2

    公开(公告)日:2011-08-09

    申请号:US12620799

    申请日:2009-11-18

    IPC分类号: H01L21/00

    摘要: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for trench and via profile modification prior to filling the trench and via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a trench structure by exposing the trench structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer.

    摘要翻译: 本发明的实施例一般涉及用于处理半导体衬底的装置和方法。 特别地,本发明的实施例涉及在填充沟槽和通孔之前进行沟槽和通孔轮廓修改的方法和装置。 本发明的一个实施例包括通过将沟槽结构暴露于蚀刻剂来形成牺牲层以压缩沟槽结构的顶部开口。 在一个实施方案中,蚀刻剂被配置为通过与第一材料反应并产生形成牺牲层的副产物来除去第一材料。

    INTEGRATION SEQUENCES WITH TOP SURFACE PROFILE MODIFICATION
    7.
    发明申请
    INTEGRATION SEQUENCES WITH TOP SURFACE PROFILE MODIFICATION 失效
    具有顶部表面轮廓修改的集成序列

    公开(公告)号:US20100129982A1

    公开(公告)日:2010-05-27

    申请号:US12620806

    申请日:2009-11-18

    IPC分类号: H01L21/28 H01L21/762

    摘要: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to apparatus and methods for forming shallow trench isolations having recesses with rounded bottoms. One embodiment of the present invention comprises forming a recess in a filled trench structure by removing a portion of a material from the filled trench structure and rounding bottom corners of the recess. Rounding bottom corners is performed by depositing a conformal layer of the same material filled in the trench structure over the substrate and removing the conformal layer of the material from sidewalls of the recess.

    摘要翻译: 本发明的实施例一般涉及用于处理半导体衬底的装置和方法。 特别地,本发明的实施例涉及用于形成具有具有圆形底部的凹部的浅沟槽隔离的装置和方法。 本发明的一个实施例包括通过从填充的沟槽结构中去除一部分材料并且使凹部的圆角底部倒圆,在填充的沟槽结构中形成凹陷。 通过将填充在沟槽结构中的相同材料的共形层沉积在衬底上并且从凹部的侧壁去除材料的共形层来进行圆角底角。

    Method and apparatus for trench and via profile modification
    8.
    发明授权
    Method and apparatus for trench and via profile modification 有权
    沟槽和通孔型材修改的方法和装置

    公开(公告)号:US08268684B2

    公开(公告)日:2012-09-18

    申请号:US13205379

    申请日:2011-08-08

    IPC分类号: H01L21/00

    摘要: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for profile modification prior to filling a structure, such as a trench or a via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a structure by exposing the structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer.

    摘要翻译: 本发明的实施例一般涉及用于处理半导体衬底的装置和方法。 特别地,本发明的实施例涉及用于在填充诸如沟槽或通孔之类的结构之前的轮廓修改的方法和装置。 本发明的一个实施例包括通过将结构暴露于蚀刻剂来形成牺牲层以夹住结构的顶部开口。 在一个实施方案中,蚀刻剂被配置为通过与第一材料反应并产生形成牺牲层的副产物来除去第一材料。

    METHOD AND APPARATUS FOR TRENCH AND VIA PROFILE MODIFICATION
    10.
    发明申请
    METHOD AND APPARATUS FOR TRENCH AND VIA PROFILE MODIFICATION 有权
    通过轮廓修改的方法和装置

    公开(公告)号:US20100129958A1

    公开(公告)日:2010-05-27

    申请号:US12620799

    申请日:2009-11-18

    摘要: Embodiments of the present invention generally relates to an apparatus and a method for processing semiconductor substrates. Particularly, embodiments of the present invention relates to methods and apparatus for trench and via profile modification prior to filling the trench and via. One embodiment of the present invention comprises forming a sacrifice layer to pinch off a top opening of a trench structure by exposing the trench structure to an etchant. In one embodiment, the etchant is configured to remove the first material by reacting with the first material and generating a by-product, which forms the sacrifice layer.

    摘要翻译: 本发明的实施例一般涉及用于处理半导体衬底的装置和方法。 特别地,本发明的实施例涉及在填充沟槽和通孔之前进行沟槽和通孔轮廓修改的方法和装置。 本发明的一个实施例包括通过将沟槽结构暴露于蚀刻剂来形成牺牲层以压缩沟槽结构的顶部开口。 在一个实施方案中,蚀刻剂被配置为通过与第一材料反应并产生形成牺牲层的副产物来除去第一材料。