发明申请
- 专利标题： Methods and Systems for Forming at Least One Dielectric Layer
- 专利标题（中）： 用于形成最少一层电介质层的方法和系统
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申请号： US11876649申请日： 2007-10-22
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公开(公告)号： US20090104764A1公开(公告)日： 2009-04-23
- 发明人: Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Derek R. Witty , Hichem M'Saad , Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
- 申请人： Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Derek R. Witty , Hichem M'Saad , Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; C23F1/00 ; H01L21/311
摘要：
A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.
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