发明授权
- 专利标题： Methods and systems for forming at least one dielectric layer
- 专利标题（中）： 用于形成至少一个电介质层的方法和系统
-
申请号： US11876649申请日： 2007-10-22
-
公开(公告)号： US07871926B2公开(公告)日： 2011-01-18
- 发明人: Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Derek R. Witty , Hichem M'Saad , Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
- 申请人： Li-Qun Xia , Mihaela Balseanu , Victor Nguyen , Derek R. Witty , Hichem M'Saad , Haichun Yang , Xinliang Lu , Chien-Teh Kao , Mei Chang
- 申请人地址： US CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Townsend and Townsend and Crew
- 主分类号： H01L21/4763
- IPC分类号： H01L21/4763 ; H01L21/31
摘要：
A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.
公开/授权文献
信息查询
IPC分类:
