公开(公告)号：US08058100B2

公开(公告)日：2011-11-15

申请号：US12788772

申请日：2010-05-27

Applicant: Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

Inventor： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC: H01L21/60

CPC classification number: H01L21/561 ,  H01L21/568 ,  H01L23/3114 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/20 ,  H01L2224/97 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/18161 ,  H01L2924/18162 ,  H01L2924/351 ,  H01L2224/82 ,  H01L2924/00

Abstract: A chip scale package structure and a method for fabricating the same are disclosed. The method includes forming metal pads on a predetermined part of a carrier; mounting chips on the carrier, each of the chips having a plurality of conductive bumps soldered to the metal pads; forming an encapsulant on the carrier to encapsulate the chips and the conductive bumps; removing the carrier to expose the metal pads and even the metal pads with a surface of the encapsulant; forming on the encapsulant a plurality of first conductive traces electrically connected to the metal pads; applying a solder mask on the first conductive traces, and forming a plurality of openings on the solder mask to expose a predetermined part of the first conductive traces; forming a plurality of conductive elements on the predetermined part; and cutting the encapsulant to form a plurality of chip scale package structures.

Abstract translation: 公开了一种芯片级封装结构及其制造方法。 该方法包括在载体的预定部分上形成金属垫; 在载体上安装芯片，每个芯片具有焊接到金属焊盘的多个导电凸块; 在载体上形成密封剂以封装芯片和导电凸块; 移除载体以暴露金属垫和甚至具有密封剂表面的金属垫; 在所述密封剂上形成电连接到所述金属焊盘的多个第一导电迹线; 在所述第一导电迹线上施加焊接掩模，以及在所述焊接掩模上形成多个开口以暴露所述第一导电迹线的预定部分; 在所述预定部分上形成多个导电元件; 以及切割所述密封剂以形成多个芯片级封装结构。

公开(公告)号：US07993967B2

公开(公告)日：2011-08-09

申请号：US12616834

申请日：2009-11-12

Applicant: Yih-Jenn Jiang ,  Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

Inventor： Yih-Jenn Jiang ,  Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: H01L23/3121 ,  H01L21/561 ,  H01L21/6835 ,  H01L24/48 ,  H01L24/97 ,  H01L2221/68345 ,  H01L2224/16 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/351 ,  H01L2224/85 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2224/0401 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor package and a fabrication method are disclosed. The fabrication method includes applying a sacrificial layer on one surface of a metal carrier, applying an insulation layer on the sacrificial layer, and forming through holes in the sacrificial layer and the insulation layer to expose the metal carrier; forming a conductive metallic layer in each through hole; forming a patterned circuit layer on the insulation layer to be electrically connected to the conductive metallic layer; mounting at least a chip on the insulation layer and electrically connecting the chip to the patterned circuit layer; forming an encapsulant to encapsulate the chip and the patterned circuit layer; and removing the metal carrier and the sacrificial layer to expose the insulation layer and conductive metallic layer to allow the conductive metallic layer to protrude from the insulation layer. In the present invention, the distance between the semiconductor package and the external device is increased, and thermal stress caused by difference between the thermal expansion coefficients is reduced, so as to enhance the reliability of the product.

Abstract translation: 公开了半导体封装和制造方法。 制造方法包括在金属载体的一个表面上施加牺牲层，在牺牲层上施加绝缘层，以及在牺牲层和绝缘层中形成通孔以露出金属载体; 在每个通孔中形成导电金属层; 在所述绝缘层上形成图案化电路层，以电连接到所述导电金属层; 将至少一个芯片安装在所述绝缘层上并将所述芯片电连接到所述图案化电路层; 形成密封剂以封装所述芯片和所述图案化电路层; 并且去除金属载体和牺牲层以暴露绝缘层和导电金属层，以允许导电金属层从绝缘层突出。 在本发明中，半导体封装和外部器件之间的距离增加，由于热膨胀系数之差导致的热应力降低，从而提高了产品的可靠性。

公开(公告)号：US20100151631A1

公开(公告)日：2010-06-17

申请号：US12710450

申请日：2010-02-23

Applicant: Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

Inventor： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC: H01L21/60

CPC classification number: H01L23/473 ,  H01L21/563 ,  H01L23/3157 ,  H01L2224/16225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253

Abstract: A semiconductor package with a heat dissipating device and a fabrication method of the semiconductor package are provided. A chip is mounted on a substrate. The heat dissipating device is mounted on the chip, and includes an accommodating room, and a first opening and a second opening that communicate with the accommodating room. An encapsulant is formed between the heat dissipating device and the substrate to encapsulate the chip. A cutting process is performed to remove a non-electrical part of structure and expose the first and second openings from the encapsulant. A cooling fluid is received in the accommodating room to absorb and dissipate heat produced by the chip. The heat dissipating device covers the encapsulant and the chip to provide a maximum heat transfer area for the semiconductor package.

Abstract translation: 提供了具有散热装置的半导体封装和半导体封装的制造方法。 芯片安装在基板上。 散热装置安装在芯片上，并且包括容纳室，以及与容纳室连通的第一开口和第二开口。 在散热装置和衬底之间形成密封剂以封装芯片。 执行切割处理以去除结构的非电气部分并且从密封剂暴露第一和第二开口。 冷却流体容纳在容纳室中以吸收和散发由芯片产生的热量。 散热装置覆盖密封剂和芯片，以为半导体封装提供最大的传热面积。

公开(公告)号：US07671466B2

公开(公告)日：2010-03-02

申请号：US11647832

申请日：2006-12-29

Applicant: Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

Inventor： Han-Ping Pu ,  Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC: H01L23/34 ,  H05K7/20 ,  H01L21/00

CPC classification number: H01L23/473 ,  H01L21/563 ,  H01L23/3157 ,  H01L2224/16225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253

Abstract: A semiconductor package with a heat dissipating device and a fabrication method of the semiconductor package are provided. A chip is mounted on a substrate. The heat dissipating device is mounted on the chip, and includes an accommodating room, and a first opening and a second opening that communicate with the accommodating room. An encapsulant is formed between the heat dissipating device and the substrate to encapsulate the chip. A cutting process is performed to remove a non-electrical part of structure and expose the first and second openings from the encapsulant. A cooling fluid is received in the accommodating room to absorb and dissipate heat produced by the chip. The heat dissipating device covers the encapsulant and the chip to provide a maximum heat transfer area for the semiconductor package.

Abstract translation: 提供了具有散热装置的半导体封装和半导体封装的制造方法。 芯片安装在基板上。 散热装置安装在芯片上，并且包括容纳室，以及与容纳室连通的第一开口和第二开口。 在散热装置和衬底之间形成密封剂以封装芯片。 执行切割处理以去除结构的非电气部分，并使第一和第二开口与密封剂暴露。 冷却流体容纳在容纳室中以吸收和散发由芯片产生的热量。 散热装置覆盖密封剂和芯片，以为半导体封装提供最大的传热面积。

公开(公告)号：US20100041181A1

公开(公告)日：2010-02-18

申请号：US12567611

申请日：2009-09-25

Applicant: Chien-Ping Huang ,  Cheng-Hsu Hsiao

Inventor： Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC: H01L21/78

CPC classification number: H01L23/3675 ,  H01L21/4871 ,  H01L21/50 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3677 ,  H01L23/4334 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92147 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A heat dissipating package structure includes a chip carrier; a semiconductor chip mounted and electrically connected to the chip carrier; a heat spreader having a first surface, an opposed second surface and a hollow structure, the second surface of the heat spreader being mounted on the chip, wherein the chip is larger in size than the hollow structure such that the chip is partly exposed to the hollow structure; an encapsulant formed between the heat spreader and the chip carrier, for encapsulating the chip, wherein the first surface and sides of the heat spreader are exposed from the encapsulant to dissipate heat produced from the chip; and a plurality of conductive elements disposed on the chip carrier, for electrically connecting the chip to an external device. The present invention also provides a method for fabricating the heat dissipating package structure.

Abstract translation: 散热封装结构包括芯片载体; 安装并电连接到芯片载体的半导体芯片; 具有第一表面，相对的第二表面和中空结构的散热器，散热器的第二表面安装在芯片上，其中芯片的尺寸大于中空结构，使得芯片部分地暴露于 中空结构; 在散热器和芯片载体之间形成的用于封装芯片的密封剂，其中散热器的第一表面和侧面从密封剂暴露以散发从芯片产生的热量; 以及设置在芯片载体上的多个导电元件，用于将芯片电连接到外部设备。 本发明还提供一种制造散热封装结构的方法。

公开(公告)号：US07615862B2

公开(公告)日：2009-11-10

申请号：US11161882

申请日：2005-08-19

Applicant: Chien-Ping Huang ,  Cheng-Hsu Hsiao

Inventor： Chien-Ping Huang ,  Cheng-Hsu Hsiao

IPC: H01L23/34 ,  H01L23/10

CPC classification number: H01L23/3675 ,  H01L21/4871 ,  H01L21/50 ,  H01L21/561 ,  H01L21/6835 ,  H01L23/3107 ,  H01L23/3114 ,  H01L23/3677 ,  H01L23/4334 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/48247 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2224/92147 ,  H01L2224/81 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A heat dissipating package structure includes a chip carrier; a semiconductor chip mounted and electrically connected to the chip carrier; a heat spreader having a first surface, an opposed second surface and a hollow structure, the second surface of the heat spreader being mounted on the chip, wherein the chip is larger in size than the hollow structure such that the chip is partly exposed to the hollow structure; an encapsulant formed between the heat spreader and the chip carrier, for encapsulating the chip, wherein the first surface and sides of the heat spreader are exposed from the encapsulant to dissipate heat produced from the chip; and a plurality of conductive elements disposed on the chip carrier, for electrically connecting the chip to an external device. The present invention also provides a method for fabricating the heat dissipating package structure.

Abstract translation: 散热封装结构包括芯片载体; 安装并电连接到芯片载体的半导体芯片; 具有第一表面，相对的第二表面和中空结构的散热器，散热器的第二表面安装在芯片上，其中芯片的尺寸大于中空结构，使得芯片部分地暴露于 中空结构; 在散热器和芯片载体之间形成的用于封装芯片的密封剂，其中散热器的第一表面和侧面从密封剂暴露以散发从芯片产生的热量; 以及设置在芯片载体上的多个导电元件，用于将芯片电连接到外部设备。 本发明还提供一种制造散热封装结构的方法。

公开(公告)号：US20090057799A1

公开(公告)日：2009-03-05

申请号：US12229651

申请日：2008-08-26

Applicant: Chang-Yueh Chan ,  Chih-Ming Huang ,  Chien-Ping Huang ,  Chin-Huang Chang ,  Cheng-Hsu Hsiao

Inventor： Chang-Yueh Chan ,  Chih-Ming Huang ,  Chien-Ping Huang ,  Chin-Huang Chang ,  Cheng-Hsu Hsiao

IPC: H01L31/00 ,  H01L21/00

CPC classification number: H01L31/0203 ,  H01L31/02164 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/1815 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A sensor semiconductor device and a method for fabricating the same are provided. At least one sensor chip is mounted and electrically connected to a lead frame. A first and a second encapsulation molding processes are sequentially performed to form a transparent encapsulant for encapsulating the sensor chip and a part of the lead frame and to form a light-impervious encapsulant for encapsulating the transparent encapsulant. The transparent encapsulant has a light-pervious portion formed at a position corresponding to and above a sensor zone of the sensor chip. The light-pervious portion is exposed from the light-impervious encapsulant. Light may penetrate the light-pervious portion, without using an additional cover board, thereby reducing manufacturing steps and costs. The above arrangement avoids prior-art problems of poor reliability caused by a porous encapsulant and poor signal reception caused by interference of ambient light entering into a conventional chip only encapsulated by a transparent encapsulant.

Abstract translation: 提供一种传感器半导体器件及其制造方法。 至少一个传感器芯片被安装并电连接到引线框架。 依次执行第一和第二封装成型工艺以形成用于封装传感器芯片和引线框架的一部分的透明密封剂，并形成用于封装透明密封剂的不透光密封剂。 透明密封剂具有形成在对应于传感器芯片的传感器区域上方的位置处的透光部分。 透光部分从不透光的密封剂暴露出来。 光可以穿透透光部分，而不使用附加的盖板，从而减少制造步骤和成本。 上述布置避免了由多孔密封剂引起的可靠性差的现有技术问题，以及由仅通过透明密封剂封装的传统芯片的环境光的干扰引起的差信号接收。

公开(公告)号：US20080251910A1

公开(公告)日：2008-10-16

申请号：US12082718

申请日：2008-04-11

Applicant: Chih-Wei Chang ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chun-Ming Liao ,  Cheng-Hsu Hsiao

Inventor： Chih-Wei Chang ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chun-Ming Liao ,  Cheng-Hsu Hsiao

IPC: H01L23/36 ,  H01L21/56

CPC classification number: H01L21/56 ,  H01L23/4334 ,  H01L2224/73253 ,  H01L2924/01019 ,  H01L2924/01079

Abstract: A method for fabricating semiconductor packages is disclosed, including mounting and electrically connecting a semiconductor chip onto a chip carrier; mounting a heat-dissipating structure on the semiconductor chip; placing the heat-dissipating structure into a mold cavity for filling therein a packaging material to form an encapsulant, wherein the heat-dissipating structure has a heat spreader having a size larger than that of the predetermined size of the semiconductor package, a covering layer formed on the, and a plurality of protrusions formed on edges of the covering layer that are free from being corresponding in position to the semiconductor chip, such that the protrusions can abut against a top surface of the mold cavity to prevent the heat spreader from being warped; and finally performing a singulation process according to the predetermined size and removing the encapsulant formed on the covering layer to form the desired semiconductor package. Also, this invention discloses a heat-dissipating structure applicable to the method described above.

Abstract translation: 公开了一种用于制造半导体封装的方法，包括将半导体芯片安装并电连接到芯片载体上; 在半导体芯片上安装散热结构; 将散热结构放置在模腔中，用于在其中填充包装材料以形成密封剂，其中散热结构具有尺寸大于半导体封装的预定尺寸的散热器，形成覆盖层 以及在覆盖层的边缘上形成的多个突起，其不与半导体芯片的位置相对应，使得突起可抵靠模腔的顶表面以防止散热器翘曲 ; 最后按照规定的尺寸进行分割处理，除去覆盖层上形成的密封剂，形成所需的半导体封装。 此外，本发明公开了一种适用于上述方法的散热结构。

公开(公告)号：US20080122070A1

公开(公告)日：2008-05-29

申请号：US11986359

申请日：2007-11-21

Applicant: Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chih-Wei Chang ,  Cheng-Hsu Hsiao

Inventor： Wen-Tsung Tseng ,  Ho-Yi Tsai ,  Chien-Ping Huang ,  Chih-Wei Chang ,  Cheng-Hsu Hsiao

IPC: H01L23/373 ,  H01L21/58

CPC classification number: H01L23/3128 ,  H01L21/568 ,  H01L23/4334 ,  H01L24/16 ,  H01L2224/16 ,  H01L2224/73253 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01079 ,  H01L2924/16152 ,  H01L2224/0401

Abstract: A heat dissipating semiconductor package and a fabrication method therefor are provided. The fabrication method for the heat dissipating semiconductor package mainly includes steps of: containing a substrate having a chip mounted thereon in an aperture of a carrier; mounting a heat dissipating sheet having supporting portions on the carrier with the heat dissipating sheet being attached on the chip; forming an encapsulant to encapsulate the semiconductor chip and the heat dissipating structure; removing a part of the encapsulant above the heat dissipating sheet with a part of the heat dissipating sheet exposed from the encapsulant by lapping; and forming a cover layer on the part of heat dissipating sheet to prevent it from oxidation; and cutting along a predetermined size of the semiconductor package, thereby heat generated from an operation of the chip is dissipated via the heat dissipating structure.

Abstract translation: 提供一种散热半导体封装及其制造方法。 用于散热半导体封装的制造方法主要包括以下步骤：将载置有孔的芯片安装在其上; 将散热板安装在载体上，并将散热板安装在芯片上; 形成密封剂以封装半导体芯片和散热结构; 通过研磨从所述密封剂暴露出的部分所述散热片去除所述散热片上方的所述密封剂的一部分; 在散热片的一部分上形成覆盖层以防止其氧化; 并且沿着预定尺寸的半导体封装进行切割，由此从芯片的操作产生的热量经由散热结构消散。

公开(公告)号：US20070164386A1

公开(公告)日：2007-07-19

申请号：US11648045

申请日：2006-12-28

Applicant: Cheng-Yi Chang ,  Chien-Ping Huang ,  Yu-Po Wang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao

Inventor： Cheng-Yi Chang ,  Chien-Ping Huang ,  Yu-Po Wang ,  Chih-Ming Huang ,  Cheng-Hsu Hsiao

IPC: H01L31/0203 ,  H01L21/56

CPC classification number: H01L27/14687 ,  H01L24/97 ,  H01L27/14618 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/8592 ,  H01L2224/97 ,  H01L2924/01033 ,  H01L2924/15311 ,  H01L2924/16195 ,  H01L2224/85 ,  H01L2924/00014

Abstract: A semiconductor device and the fabrication method thereof are provided. The fabrication method includes providing a substrate module plate having a plurality of substrates; attaching at least one sensor chip to each of the substrates of the substrate module plate; electrically connecting each of the sensor chips to each of the substrates through bonding wires; forming an insulating layer between each sensor chip on the substrate module plate, wherein the height of the insulating layers are not greater than the thickness of the sensor chips so as to prevent flash from the insulating layers from contaminating the sensor chips; forming an adhesive lip on the insulating layer or forming a second insulating layer followed by forming the adhesive layer, wherein the adhesive layer or the second insulating layer is higher than the highest loop-height of the bonding wires; adhering a light transmitting cover to each adhesive layer to cover the sensor chip; and cutting the substrate module plate to separate the substrates to form a plurality of semiconductor devices each integrated with at least one sensor chip. As the adhesive layers are not in contact with the bonding wires, the problems of damaging or breaking the bonding wires can be prevented in the process of adhering the light transmitting cover.

Abstract translation: 提供半导体器件及其制造方法。 该制造方法包括提供具有多个基板的基板模块板; 将至少一个传感器芯片附接到所述基板模块板的每个基板; 通过接合线将每个传感器芯片电连接到每个基板; 在衬底模块板上的每个传感器芯片之间形成绝缘层，其中绝缘层的高度不大于传感器芯片的厚度，以防止来自绝缘层的闪光污染传感器芯片; 在所述绝缘层上形成粘合剂唇缘或形成第二绝缘层，接着形成所述粘合剂层，其中所述粘合剂层或所述第二绝缘层高于所述接合线的最高环高度; 将透光盖粘附到每个粘合剂层以覆盖传感器芯片; 以及切割所述基板模块板以分离所述基板以形成多个半导体器件，每个半导体器件与至少一个传感器芯片集成。 由于粘合层不与接合线接触，所以在粘接透光罩的过程中可以防止损坏或断裂接合线的问题。