MEASUREMENT ILLUMINATION OPTICAL UNIT FOR GUIDING ILLUMINATION LIGHT INTO AN OBJECT FIELD OF A PROJECTION EXPOSURE SYSTEM FOR EUV LITHOGRAPHY

    公开(公告)号:US20220057717A1

    公开(公告)日:2022-02-24

    申请号:US17511234

    申请日:2021-10-26

    IPC分类号: G03F7/20

    摘要: A measurement illumination optical unit guides illumination light into an object field of a projection exposure apparatus for EUV lithography. The illumination optical unit has a field facet mirror with a plurality of field facets and a pupil facet mirror with a plurality of pupil facets. The latter serve for overlaid imaging in the object field of field facet images of the field facets. A field facet imaging channel of the illumination light is guided via any one field facet and any one pupil facet. A field stop specifies a field boundary of an illumination field in the object plane. The illumination field has a greater extent along one field dimension than any one of the field facet images. At least some of the field facets include tilt actuators which help guide the illumination light into the illumination field via various field facets and one and the same pupil facet.

    EUV Lithography System
    5.
    发明申请
    EUV Lithography System 有权
    EUV光刻系统

    公开(公告)号:US20130265560A1

    公开(公告)日:2013-10-10

    申请号:US13910912

    申请日:2013-06-05

    IPC分类号: G03F7/20

    摘要: An EUV lithography system 1 comprises an EUV beam path and a monitor beam path 51.The EUV beam path comprises a mirror system 13, which has a base and a multiplicity of mirror elements 17 having concave mirror surfaces, the orientation of which relative to the base is respectively adjustable.The monitor beam path 51 comprises at least one monitor radiation source 53, a screen 71, the mirror system 13, which is arranged in the monitor beam path 51 between the monitor radiation source 53 and the screen 71, and a spatially resolving detector 77.In this case, each of a plurality of the mirror elements generates an image of the monitor radiation source in an image plane assigned to the respective mirror elements, distances B between the image planes assigned to the mirror elements and the screen have a maximum distance, distances A between each of the plurality of mirror elements and the image plane assigned to it have a minimum distance, and the maximum distance B is less than half of the minimum distance A.

    摘要翻译: EUV光刻系统1包括EUV光束路径和监视器光束路径51. EUV光束路径包括镜子系统13,镜子系统13具有底座和多个具有凹面镜面的镜子元件17,镜子表面的取向相对于 基座分别可调。 监视器光路51包括至少一个监视器辐射源53,屏幕71,布置在监视器射线源53和屏幕71之间的监视器光路51中的镜子系统13以及空间分辨检测器77。 在这种情况下,多个镜像元件中的每一个在分配给各个镜像元件的图像平面中产生监视器辐射源的图像,分配给镜像元件的图像平面与屏幕之间的距离B具有最大距离, 多个镜像元件中的每一个与分配给它的图像平面之间的距离A具有最小距离,并且最大距离B小于最小距离A的一半。

    Measurement illumination optical unit for guiding illumination light into an object field of a projection exposure system for EUV lithography

    公开(公告)号:US11720028B2

    公开(公告)日:2023-08-08

    申请号:US17511234

    申请日:2021-10-26

    IPC分类号: G03F7/20 G03F7/00

    CPC分类号: G03F7/7015 G03F7/70133

    摘要: A measurement illumination optical unit guides illumination light into an object field of a projection exposure apparatus for EUV lithography. The illumination optical unit has a field facet mirror with a plurality of field facets and a pupil facet mirror with a plurality of pupil facets. The latter serve for overlaid imaging in the object field of field facet images of the field facets. A field facet imaging channel of the illumination light is guided via any one field facet and any one pupil facet. A field stop specifies a field boundary of an illumination field in the object plane. The illumination field has a greater extent along one field dimension than any one of the field facet images. At least some of the field facets include tilt actuators which help guide the illumination light into the illumination field via various field facets and one and the same pupil facet.

    EUV lithography system
    8.
    发明授权
    EUV lithography system 有权
    EUV光刻系统

    公开(公告)号:US09448490B2

    公开(公告)日:2016-09-20

    申请号:US13910912

    申请日:2013-06-05

    IPC分类号: G03B27/52 G03B27/42 G03F7/20

    摘要: An EUV lithography system 1 comprises an EUV beam path and a monitor beam path 51. The EUV beam path comprises a mirror system 13, which has a base and a multiplicity of mirror elements 17 having concave mirror surfaces, the orientation of which relative to the base is respectively adjustable.The monitor beam path 51 comprises at least one monitor radiation source 53, a screen 71, the mirror system 13, which is arranged in the monitor beam path 51 between the monitor radiation source 53 and the screen 71, and a spatially resolving detector 77. In this case, each of a plurality of the mirror elements generates an image of the monitor radiation source in an image plane assigned to the respective mirror elements, distances B between the image planes assigned to the mirror elements and the screen have a maximum distance, distances A between each of the plurality of mirror elements and the image plane assigned to it have a minimum distance, and the maximum distance B is less than half of the minimum distance A.

    摘要翻译: 在这种情况下,多个镜像元件中的每一个在分配给各个镜像元件的图像平面中产生监视器辐射源的图像,分配给镜像元件的图像平面与屏幕之间的距离B具有最大距离, 多个镜像元件中的每一个与分配给它的图像平面之间的距离A具有最小距离,并且最大距离B小于最小距离A的一半。