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公开(公告)号：US10791295B2
公开(公告)日：2020-09-29
申请号：US16254901
申请日：2019-01-23
发明人： Shoji Kono , Toru Koizumi , Hiroo Akabori , Yusuke Yamashita
IPC分类号： H04N5/378 , H04N5/355 , H04N5/343 , H04N5/369 , H01L27/146
摘要： A photoelectric conversion apparatus includes first and second signal lines, first and second circuits, and a switch. Signals based on electric charges generated in first and second photoelectric conversion portions are to be read out to the first and second signal lines, respectively. The first circuit includes a first input unit to which the first signal line is connected. The first circuit is configured to perform processing of a signal input to the first input unit, with a first gain. The second circuit includes a second input unit to which the second signal line is connected. The second circuit is configured to perform processing of a signal input to the second input unit. The switch is configured to perform switching between a connected state and a disconnected state between the first signal line and the second signal line.
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公开(公告)号：US20180145108A1
公开(公告)日：2018-05-24
申请号：US15876697
申请日：2018-01-22
发明人： Masahiro Kobayashi , Yusuke Onuki , Toru Koizumi
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14656 , H04N5/3592 , H04N5/37452
摘要： A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.
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3.发明申请公开(公告)号：US20180102386A1
公开(公告)日：2018-04-12
申请号：US15712611
申请日：2017-09-22
发明人： Daisuke Kobayashi , Toru Koizumi , Kazuhiro Saito
IPC分类号： H01L27/146 , H04N5/235 , H04N5/353
CPC分类号： H01L27/14609 , H04N5/2353 , H04N5/3532 , H04N5/355 , H04N5/3559 , H04N5/3742 , H04N5/37452
摘要： A solid-state imaging device includes pixels each of which includes a photoelectric converter configured to generate charges by photoelectric conversion, a holding unit configured to hold charges generated by the photoelectric converter, and a transfer unit configured to transfer charges from the photoelectric converter to the holding unit, and outputs a signal based on charges in the holding unit, a transfer control unit configured to control the transfer unit to transfer charges generated by the photoelectric converter during one exposure period to the holding unit by a variable number, which is one or greater, of transfer operations, an amplifier unit configured to amplify the signal, and a control unit configured to control a gain of the amplifier unit to be a first gain when the number of transfer operations is first number and to be a second gain when the number of transfer operations is a second number.
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公开(公告)号：US20170345857A1
公开(公告)日：2017-11-30
申请号：US15599140
申请日：2017-05-18
发明人： Tatsuya Suzuki , Toru Koizumi , Masanori Ogura , Takanori Suzuki , Jun Iba
IPC分类号： H01L27/146 , H04N1/028
CPC分类号： H01L27/14605 , H01L27/1463 , H01L27/14643 , H04N1/02805
摘要： A photoelectric conversion apparatus includes a semiconductor substrate having one principle surface including recessed portions, and insulation bodies in the recessed portions. The semiconductor substrate includes photoelectric conversion elements each of which includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the second conductivity type which has at least a portion disposed nearer to the principle surface relative to the second semiconductor region. The second semiconductor region has a polarity of signal charge. The second semiconductor region is in contact with the first and third semiconductor regions. Signal charge paths are disposed between the recessed portions in a cross section perpendicular to the principle surface. At least one of the second and third semiconductor regions is positioned in directions of at least two of the signal charge paths.
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公开(公告)号：US09761626B2
公开(公告)日：2017-09-12
申请号：US15498197
申请日：2017-04-26
发明人： Masahiro Kobayashi , Yusuke Onuki , Toru Koizumi
IPC分类号： H01L21/00 , H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14656 , H04N5/3592 , H04N5/37452
摘要： A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.
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公开(公告)号：US20160240577A1
公开(公告)日：2016-08-18
申请号：US15040727
申请日：2016-02-10
发明人： Masahiro Kobayashi , Yusuke Onuki , Toru Koizumi
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14612 , H01L27/1463 , H01L27/14656 , H04N5/3592 , H04N5/37452
摘要： A solid-state image pickup device is provided which can inhibit degradation of image quality which may occur when a global electronic shutter operation is performed. A gate drive line for a first transistor of gate drive lines for pixel transistors is positioned in proximity to a converting unit.
摘要翻译： 提供固态图像拾取装置，其可以抑制当执行全局电子快门操作时可能发生的图像质量的劣化。 用于像素晶体管的栅极驱动线的第一晶体管的栅极驱动线位于转换单元附近。
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公开(公告)号：US09257479B2
公开(公告)日：2016-02-09
申请号：US14138277
申请日：2013-12-23
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tetsunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/146 , H01L27/148 , H01L31/0352
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： A method of manufacturing an active pixel sensor having a plurality of pixels, each of the pixels having a photodiode formed by a part of a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type, and a transfer transistor for transferring a charge carrier from the photodiode, includes the steps of preparing a substrate on which the first semiconductor region of the first conductive type is formed, forming a mask to form the second semiconductor region on the substrate, forming the second semiconductor region using the mask, and forming a gate of the transferring transistor after forming the second semiconductor region. The gate of the transferring transistor overlaps the second semiconductor region in a planar view.
摘要翻译： 一种制造具有多个像素的有源像素传感器的方法，每个像素具有由第一导电类型的第一半导体区域和第二导电类型的第二半导体区域的一部分形成的光电二极管，以及转移晶体管 用于从光电二极管传输电荷载体的步骤包括以下步骤：制备其上形成有第一导电类型的第一半导体区域的衬底，形成掩模以在衬底上形成第二半导体区域，使用 掩模，并且在形成第二半导体区域之后形成转移晶体管的栅极。 转移晶体管的栅极在平面图中与第二半导体区域重叠。
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公开(公告)号：US20150264244A1
公开(公告)日：2015-09-17
申请号：US14645295
申请日：2015-03-11
IPC分类号： H04N5/235 , H04N5/3745 , H04N5/378 , H04N5/353 , H04N5/374
CPC分类号： H04N5/378 , H01L27/14609 , H01L27/14623 , H01L27/14643 , H01L27/14656 , H04N5/3532 , H04N5/35581 , H04N5/3765
摘要： An image capturing apparatus performs a global electronic shutter operation in which a plurality of pixels are exposed during the same exposure period. In a first period, charge is accumulated by a photoelectric conversion unit. In a second period, accumulation units of a plurality of pixels accumulate charge. A ratio of saturation charge quantity of the photoelectric conversion unit to saturation charge quantity of the accumulation unit has a certain relationship with a ratio of a length of the first period to the sum of the length of the first period and the length of the second period.
摘要翻译： 图像捕获装置执行在同一曝光期间多个像素曝光的全局电子快门操作。 在第一时段中，电荷由光电转换单元累积。 在第二时段中，多个像素的累加单元累积电荷。 光电转换单元的饱和电荷量与累积单元的饱和电荷量的比率与第一期间的长度与第一期间的长度和第二期间的长度的比率有一定关系 。
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公开(公告)号：US20150092095A1
公开(公告)日：2015-04-02
申请号：US14567226
申请日：2014-12-11
发明人： Takashi Matsuda , Shin Kikuchi , Toru Koizumi
IPC分类号： H04N5/378 , H01L27/146
CPC分类号： H04N5/378 , H01L27/14609 , H01L27/14623 , H01L27/14636 , H01L27/14643 , H01L27/14663 , H04N5/32 , H04N5/3415 , H04N5/3745
摘要： A solid-state imaging apparatus includes a pixel array in which a plurality of pixels are arranged, wherein the pixel array has a region formed from one of an electrical conductor and a semiconductor to which a fixed electric potential is supplied, each pixel includes a photoelectric converter, a charge-voltage converter which converts charges generated by the photoelectric converter into a voltage, and an amplification unit which amplifies a signal generated by the charge-voltage converter by a positive gain and outputs the amplified signal to an output line, and the output line comprising a shielding portion arranged to shield at least part of the charge-voltage converter with respect to the region.
摘要翻译： 固态成像装置包括其中布置有多个像素的像素阵列，其中像素阵列具有由电导体和提供固定电位的半导体中的一个形成的区域，每个像素包括光电 转换器，将由光电转换器产生的电荷转换为电压的电荷 - 电压转换器，以及放大单元，其通过正增益放大由电荷 - 电压转换器产生的信号，并将放大的信号输出到输出线， 输出线包括屏蔽部分，其布置成相对于该区域屏蔽电荷 - 电压转换器的至少一部分。
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公开(公告)号：US08896029B2
公开(公告)日：2014-11-25
申请号：US13752732
申请日：2013-01-29
发明人： Toru Koizumi , Akira Okita , Masanori Ogura , Shin Kikuchi , Tetsuya Itano
IPC分类号： H01L27/146 , H04N9/04 , H04N5/355 , H01L27/148
CPC分类号： H01L27/14603 , H01L27/14625 , H01L27/14645 , H01L27/14656 , H01L27/14806 , H04N5/3559 , H04N9/045
摘要： A solid state image pickup device which can prevent color mixture by using a layout of a capacitor region provided separately from a floating diffusion region and a camera using such a device are provided. A photodiode region is a rectangular region including a photodiode. A capacitor region includes a carrier holding unit and is arranged on one side of the rectangle of the photodiode region as a region having a side longer than the one side. In a MOS unit region, an output unit region including an output unit having a side longer than the other side which crosses the one side of the rectangle of the photodiode region is arranged on the other side. A gate region and the FD region are arranged between the photodiode region and the capacitor region.
摘要翻译： 提供一种可以通过使用与浮动扩散区域分开设置的电容器区域的布局来防止混色的固态图像拾取装置和使用这种装置的相机。 光电二极管区域是包括光电二极管的矩形区域。 电容器区域包括载体保持单元，并且布置在作为具有比一侧更长的一侧的区域的光电二极管区域的矩形的一侧。 在MOS单元区域中，在另一侧设置包括具有比另一侧长的方向的输出单元的输出单元区域，该另一侧与光电二极管区域的矩形的一侧相交。 栅极区域和FD区域布置在光电二极管区域和电容器区域之间。
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