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    Liquid ejection apparatus
    1.
    发明授权
    Liquid ejection apparatus 有权

    公开(公告)号：US11440326B2

    公开(公告)日：2022-09-13

    申请号：US17143963

    申请日：2021-01-07

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Yoshiyuki Fukumoto ,  Hiroshi Higuchi

    IPC: B41J2/175

    Abstract: A liquid ejection apparatus includes at least one ink tank which is ink-refillable from outside, a liquid ejection head that ejects an ink supplied from the ink tank, and a housing that contains the ink tank and the liquid ejection head inside. The at least one ink tank is fixed to a housing wall of at least one surface out of surfaces forming the housing. Moreover, one surface out of surfaces forming the ink tank, which is attached to the housing wall, is either a surface having the largest area of the ink tank or a surface opposed to the surface having the largest area.

    SUBSTRATE JOINED BODY
    4.
    发明公开
    SUBSTRATE JOINED BODY 审中-公开

    公开(公告)号：US20240253354A1

    公开(公告)日：2024-08-01

    申请号：US18592824

    申请日：2024-03-01

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Taichi Yonemoto ,  Yoshiyuki Fukumoto ,  Atsunori Terasaki

    IPC: B41J2/14 ,  B41J2/16

    CPC classification number: B41J2/1433 ,  B41J2/162 ,  B41J2/1623 ,  B41J2/1642 ,  B41J2002/14362

    Abstract: A substrate joined body including: a first substrate; a second substrate; an organic film that comprises silicon and carbon and joins the first substrate and the second substrate; and a protective film that comprises an inorganic element and is formed over the organic film from at least a part of the surface of the first substrate and at least a part of the surface of the second substrate, wherein the protective film comprises a region in which the ratio of carbon to silicon based on atomic percentage is from 0.0 to 5.0 in a region within 50 nm in a thickness direction from a surface of the organic film on the protective film side, when the surface is measured by X-ray photoelectron spectroscopy.

    Method for forming patterned film and method for producing liquid ejection head
    5.
    发明授权
    Method for forming patterned film and method for producing liquid ejection head 有权

    公开(公告)号：US10315426B2

    公开(公告)日：2019-06-11

    申请号：US15801525

    申请日：2017-11-02

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Atsushi Teranishi ,  Yoshiyuki Fukumoto

    IPC: B41J2/16 ,  B41J2/14

    Abstract: A method for forming a patterned film on a substrate includes: step of patterning a mask material on the substrate, thereby covering, with the mask material, the region except a patterned film forming region on a substrate surface on which the patterned film is to be formed; step of covering, with a protective member, at least a part of the surface of the mask material opposite to the substrate so as to allow the patterned film forming region to communicate with outside air, thereby forming a workpiece to be subjected to film formation in following step; step of forming a film on at least the patterned film forming region of the surface of the workpiece communicating with the outside air; step of releasing the protective member from the mask material; and step of removing the mask material and a part of the film on the mask material.

    METHOD FOR MACHINING SILICON SUBSTRATE, AND LIQUID EJECTION HEAD
    9.
    发明申请
    METHOD FOR MACHINING SILICON SUBSTRATE, AND LIQUID EJECTION HEAD 审中-公开
    加工硅基板和液体喷射头的方法

    公开(公告)号：US20160176192A1

    公开(公告)日：2016-06-23

    申请号：US14964409

    申请日：2015-12-09

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Yoshiyuki Fukumoto

    IPC: B41J2/16 ,  H01L21/62 ,  B41J2/14 ,  H01L21/027

    CPC classification number: B41J2/1628 ,  B41J2/1603 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2/1632 ,  B41J2/1639 ,  B41J2/1642 ,  B41J2/1645 ,  B41J2/1646 ,  H01L21/027

    Abstract: A method for machining a silicon substrate through which a through-hole is created in the silicon substrate and a structure of a liquid ejection head using this method, wherein first recesses are machined in a first surface of a silicon substrate, and a sidewall-protecting film is formed on the side walls of the first recesses. The bottom section of the first recesses is then etched. After that, cavities are created that have a larger cross-sectional area than the first recesses in the horizontal direction of the substrate, and an etching stopper film is formed on the inner walls of the cavities. A second recess is then machined from a second surface of the silicon substrate to make at least part of the etching stopper film exposed. Lastly, the etching stopper film is removed to make the first recesses communicate with the second recess, completing a through-hole.

    Abstract translation: 一种用于加工在硅衬底中形成通孔的硅衬底的方法和使用该方法的液体喷射头的结构，其中在硅衬底的第一表面中加工第一凹部，并且侧壁保护 膜形成在第一凹部的侧壁上。 然后蚀刻第一凹部的底部。 之后，形成具有比基板的水平方向上的第一凹部更大的横截面积的空腔，并且在空腔的内壁上形成蚀刻停止膜。 然后从硅衬底的第二表面加工第二凹槽，以使至少部分蚀刻停止膜暴露。 最后，去除蚀刻阻挡膜，使第一凹部与第二凹部连通，从而形成通孔。

    SUBSTRATE AND METHOD OF MANUFACTURING SUBSTRATE
    10.
    发明申请
    SUBSTRATE AND METHOD OF MANUFACTURING SUBSTRATE 有权

    公开(公告)号：US20230008405A1

    公开(公告)日：2023-01-12

    申请号：US17857332

    申请日：2022-07-05

    Applicant: CANON KABUSHIKI KAISHA

    Inventor： Mitsunori Toshishige ,  Yoshiyuki Fukumoto

    IPC: H01L23/544

    Abstract: Provided is a method of manufacturing a substrate including an alignment mark, including: forming the alignment mark and a recess portion on the substrate, the alignment mark not penetrating the substrate and including a bottom portion with a lower infrared transmittance than that of a first surface and a second surface of the substrate; and aligning the substrate by orthogonally arranging predetermined positions of the first surface and the second surface of the substrate in a horizontal direction and an infrared ray camera and by image-identifying the alignment mark formed on the substrate with transmitted light of infrared rays emitted from the infrared ray camera.

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