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公开(公告)号：US20240253354A1
公开(公告)日：2024-08-01
申请号：US18592824
申请日：2024-03-01
CPC分类号： B41J2/1433 , B41J2/162 , B41J2/1623 , B41J2/1642 , B41J2002/14362
摘要： A substrate joined body including: a first substrate; a second substrate; an organic film that comprises silicon and carbon and joins the first substrate and the second substrate; and a protective film that comprises an inorganic element and is formed over the organic film from at least a part of the surface of the first substrate and at least a part of the surface of the second substrate, wherein the protective film comprises a region in which the ratio of carbon to silicon based on atomic percentage is from 0.0 to 5.0 in a region within 50 nm in a thickness direction from a surface of the organic film on the protective film side, when the surface is measured by X-ray photoelectron spectroscopy.
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公开(公告)号：US20220388309A1
公开(公告)日：2022-12-08
申请号：US17751916
申请日：2022-05-24
摘要： A method for manufacturing a liquid discharge head comprising: a substrate, a protective layer covering at least a part of the substrate, and a laminate member formed on the protective layer, wherein the method comprises steps of: forming the protective layer on at least a part of the substrate; forming the laminate member on the protective layer with a part of the protective layer exposed, the protective layer comprises at least Si and C, a content of oxygen in a bulk of the protective layer is less than 20 atomic % in terms of an element composition ratio, a modified layer with a content of oxygen of 20 atomic % or more in terms of an element composition ratio is present on a surface of the protective layer, and a thickness of the modified layer between the protective layer and the laminate member is 3.40 nm or less.
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公开(公告)号：US20180281414A1
公开(公告)日：2018-10-04
申请号：US15937580
申请日：2018-03-27
CPC分类号： B41J2/1623 , B41J2/045 , B41J2/1603 , B41J2/1606 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1634 , B41J2/1642 , B41J2/1645 , B41J2/1646 , B41J2202/22 , B81B1/004 , B81B3/0072 , B81B2201/052 , B81C1/00666 , B81C1/00809 , B81C3/001 , B81C2201/016 , B81C2203/032 , C23C16/405 , C23C16/45525
摘要： A method for manufacturing a bonded substrate body in which an end portion of an adhesive is located at a position retreated in a direction to the inside of the bonded substrate body from an end surface of a bonding region of a first substrate and a second substrate includes forming a film on the end portion of the adhesive.
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4.发明授权Processing method of silicon substrate, fabricating method of substrate for liquid ejection head, and fabricating method of liquid ejection head 有权硅衬底的处理方法，液体喷射头用基板的制造方法以及液体喷射头的制造方法公开(公告)号：US09545793B2
公开(公告)日：2017-01-17
申请号：US14872384
申请日：2015-10-01
发明人： Ryoji Kanri , Atsunori Terasaki
IPC分类号： H01L21/00 , B41J2/16 , H01L21/3065 , H01L21/308
CPC分类号： B41J2/1628 , B41J2/1603 , B41J2/1623 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2/1646 , H01L21/3065 , H01L21/308
摘要： An object of the present invention is to provide a processing method of a silicon substrate, capable of suppressing breakage of thin silicon or a thin film structure of an intermediate layer in etching first and second silicon substrates. According to the present invention, a first silicon substrate and a second silicon substrate are bonded to each other while holding an intermediate layer having an opening between both of the silicon substrates in a bonding step. A closed space defined by at least one of the first and second silicon substrates and the opening at least partly embedded with a filler in a filling step. Furthermore, a liquid supply port is formed in such a manner as to penetrate the filler in the opening and the second silicon substrate from the first silicon substrate in an etching step.
摘要翻译： 本发明的目的是提供一种在蚀刻第一和第二硅衬底中能够抑制薄硅破坏或中间层的薄膜结构的硅衬底的处理方法。 根据本发明，第一硅衬底和第二硅衬底彼此接合，同时在接合步骤中保持在两个硅衬底之间具有开口的中间层。 在填充步骤中由至少一个第一硅衬底和第二硅衬底限定的封闭空间和至少部分地填充有填料的开口。 此外，在蚀刻步骤中，以从第一硅衬底穿透开口中的填料和第二硅衬底的方式形成液体供给口。
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公开(公告)号：US20160260601A1
公开(公告)日：2016-09-08
申请号：US15059084
申请日：2016-03-02
发明人： Hiroshi Higuchi , Masataka Kato , Yoshinao Ogata , Toshiyasu Sakai , Takayuki Kamimura , Tetsushi Ishikawa , Atsunori Terasaki , Masahiko Kubota , Ryoji Kanri , Yoshiyuki Fukumoto , Yasuaki Tominaga , Tamaki Sato , Masafumi Morisue
IPC分类号： H01L21/027 , H01L21/306 , H01L21/308 , H01L21/311
CPC分类号： B41J2/00 , B41J2/14 , B41J2/14072 , B41J2/1601 , B41J2/1628 , B41J2/1629 , B41J2/1631 , B41J2/1643 , H01L21/565 , H01L2924/01078 , H01L2924/01079
摘要： A method for manufacturing a structure having a substrate in which holes are formed and a photosensitive resin layer provided on the substrate in such a manner as to cover at least a part of the holes includes a process of preparing a substrate in which holes formed by a surface in which a wavelike shape is formed and a photosensitive resin layer provided on the substrate in such a manner as to cover at least a part of the holes and an exposure process of exposing the photosensitive resin layer on the substrate.
摘要翻译： 一种用于制造具有其中形成有孔的基板和以覆盖至少一部分孔的方式设置在基板上的感光性树脂层的结构的方法包括制备基板的工艺，其中由 形成波状形状的表面和以覆盖至少一部分孔的方式设置在基板上的感光性树脂层和曝光基板上的感光性树脂层的曝光工序。
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6.发明申请PROCESSING METHOD OF SUBSTRATE AND MANUFACTURING METHOD OF LIQUID EJECTION HEAD 有权液体喷射头基板和制造方法的处理方法公开(公告)号：US20160176193A1
公开(公告)日：2016-06-23
申请号：US14963493
申请日：2015-12-09
发明人： Atsushi Hiramoto , Atsunori Terasaki , Ryoji Kanri
CPC分类号： H01L21/0234 , B41J2/14016 , B41J2/14145 , B41J2/1603 , B41J2/1628 , B41J2/1631 , H01L21/0212
摘要： There are provided a processing method of a substrate in which in forming a trench on the substrate by etching, a side wall surrounding the trench is surely protected, and a manufacturing method of a liquid ejection head. The methods include: repeating sequentially a plurality of cycles of a trench forming step of forming the trench on a printing element substrate, a first protection layer forming step of forming a passivation layer, and a first protection layer removing step of removing a portion at which the trench is excavated in the passivation layer. A second protection layer forming step and a second protection layer removing step are performed between the trench forming step through the first protection layer removing step repeated in a plurality of cycles and the trench forming step through the first protection layer removing step repeated next.
摘要翻译： 提供了一种衬底的处理方法，其中通过蚀刻在衬底上形成沟槽，确保保护围绕沟槽的侧壁，以及液体喷射头的制造方法。 所述方法包括：在打印元件基板上顺序地重复形成沟槽的沟槽形成步骤的多个循环，形成钝化层的第一保护层形成步骤，以及去除部分的第一保护层去除步骤， 沟槽在钝化层中被挖掘出来。 在通过多个周期重复的第一保护层去除步骤的沟槽形成步骤和接下来重复的第一保护层去除步骤的沟槽形成步骤之间执行第二保护层形成步骤和第二保护层去除步骤。
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7.发明申请PROCESSING METHOD OF SILICON SUBSTRATE, FABRICATING METHOD OF SUBSTRATE FOR LIQUID EJECTION HEAD, AND FABRICATING METHOD OF LIQUID EJECTION HEAD 有权硅基板的加工方法，液体喷射头基板的制造方法和液体喷射头的制造方法公开(公告)号：US20160101623A1
公开(公告)日：2016-04-14
申请号：US14872384
申请日：2015-10-01
发明人： Ryoji Kanri , Atsunori Terasaki
IPC分类号： B41J2/16 , H01L21/308 , H01L21/3065
CPC分类号： B41J2/1628 , B41J2/1603 , B41J2/1623 , B41J2/1629 , B41J2/1631 , B41J2/1632 , B41J2/1642 , B41J2/1646 , H01L21/3065 , H01L21/308
摘要： An object of the present invention is to provide a processing method of a silicon substrate, capable of suppressing breakage of thin silicon or a thin film structure of an intermediate layer in etching first and second silicon substrates. According to the present invention, a first silicon substrate and a second silicon substrate are bonded to each other while holding an intermediate layer having an opening between both of the silicon substrates in a bonding step. A closed space defined by at least one of the first and second silicon substrates and the opening at least partly embedded with a filler in a filling step. Furthermore, a liquid supply port is formed in such a manner as to penetrate the filler in the opening and the second silicon substrate from the first silicon substrate in an etching step.
摘要翻译： 本发明的目的是提供一种在蚀刻第一和第二硅衬底中能够抑制薄硅破坏或中间层的薄膜结构的硅衬底的处理方法。 根据本发明，第一硅衬底和第二硅衬底彼此接合，同时在接合步骤中保持在两个硅衬底之间具有开口的中间层。 在填充步骤中由至少一个第一硅衬底和第二硅衬底限定的封闭空间和至少部分地填充有填料的开口。 此外，在蚀刻步骤中，以从第一硅衬底穿透开口中的填料和第二硅衬底的方式形成液体供给口。
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公开(公告)号：US10994540B2
公开(公告)日：2021-05-04
申请号：US16668340
申请日：2019-10-30
发明人： Atsunori Terasaki
摘要： A substrate having an obliquely running through hole is manufactured by arranging first and second masks each having an opening pattern on first and second surfaces, respectively, of the substrate, then forming cavities each facing an opening of the opening patterns from the respective surfaces by anisotropic dry etching, and making the cavities formed from the first surface and the cavities formed from the second surface communicate with each other to produce the through hole. The opening pattern of the first mask and the opening pattern of the second mask are arranged adjacently to or partially overlapping with each other as viewed from the direction orthogonal to the substrate. The opening area of at least one of the openings of the first and second masks are increased along the direction from the mask including the at least one opening toward the oppositely disposed mask.
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公开(公告)号：US20200227252A1
公开(公告)日：2020-07-16
申请号：US16268901
申请日：2019-02-06
发明人： Masaya Uyama , Souta Takeuchi , Taichi Yonemoto , Kazuaki Shibata , Atsushi Teranishi , Takeru Yasuda , Atsunori Terasaki
IPC分类号： H01L21/027 , H01L21/02
摘要： Provided is a method of forming a film on a substrate including: forming a protective member on a surface of the substrate; forming an organic structure on the surface of the substrate, at a distance from the protective member; removing the protective member after the formation of the organic structure; and forming a film by CVD in a region of the surface of the substrate from which the protective member is removed.
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公开(公告)号：US10669628B2
公开(公告)日：2020-06-02
申请号：US15960375
申请日：2018-04-23
摘要： A method for manufacturing a laminate has a process of forming a film on a substrate by an atomic layer deposition method and a process of forming a layer containing a compound polymerizable with acid and an acid generator, and then curing the layer to form resin layer on the film, in which the nitrogen atom atomic composition ratio of the film is 2.5% or less.
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