发明申请
- 专利标题： PROCESSING METHOD OF SILICON SUBSTRATE, FABRICATING METHOD OF SUBSTRATE FOR LIQUID EJECTION HEAD, AND FABRICATING METHOD OF LIQUID EJECTION HEAD
- 专利标题（中）： 硅基板的加工方法，液体喷射头基板的制造方法和液体喷射头的制造方法
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申请号： US14872384申请日： 2015-10-01
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公开(公告)号： US20160101623A1公开(公告)日： 2016-04-14
- 发明人: Ryoji Kanri , Atsunori Terasaki
- 申请人： CANON KABUSHIKI KAISHA
- 优先权： JP2014-209195 20141010
- 主分类号： B41J2/16
- IPC分类号： B41J2/16 ; H01L21/308 ; H01L21/3065
摘要：
An object of the present invention is to provide a processing method of a silicon substrate, capable of suppressing breakage of thin silicon or a thin film structure of an intermediate layer in etching first and second silicon substrates. According to the present invention, a first silicon substrate and a second silicon substrate are bonded to each other while holding an intermediate layer having an opening between both of the silicon substrates in a bonding step. A closed space defined by at least one of the first and second silicon substrates and the opening at least partly embedded with a filler in a filling step. Furthermore, a liquid supply port is formed in such a manner as to penetrate the filler in the opening and the second silicon substrate from the first silicon substrate in an etching step.
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