公开(公告)号：US20090316119A1

公开(公告)日：2009-12-24

申请号：US12309202

申请日：2007-07-18

申请人： Bipin S. Parekh ,  Annie Xia ,  Michael Clarke ,  Joseph E. Smith

发明人： Bipin S. Parekh ,  Annie Xia ,  Michael Clarke ,  Joseph E. Smith

IPC分类号： G03B27/52 ,  G03B27/32

CPC分类号： G03F7/70341 ,  C02F1/32 ,  C02F1/42 ,  C02F1/444 ,  C02F9/00 ,  C02F2001/427 ,  C02F2101/30 ,  C02F2103/04 ,  C02F2103/346 ,  F28D2021/0077

摘要： The present invention includes apparatus and methods for producing a conditioned immersion fluid for use in an immersion lithography process. The conditioned immersion fluid protects the immersion system lens and reduces or eliminates deposition of contaminants onto the lens that can adversely affect the lens transmission and durability of an immersion lithography system.

摘要翻译： 本发明包括用于生产用于浸没式光刻工艺的调理浸渍液的设备和方法。 调理浸渍液保护浸没系统透镜，并减少或消除污染物沉积到透镜上，这可能不利地影响透镜透射和浸没式光刻系统的耐用性。

公开(公告)号：US20060065938A1

公开(公告)日：2006-03-30

申请号：US10954104

申请日：2004-09-30

申请人： Akiteru Ko ,  Annie Xia ,  Lee Chen

发明人： Akiteru Ko ,  Annie Xia ,  Lee Chen

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L21/0234 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31645 ,  H01L29/517

摘要： A method for plasma processing a high-k layer includes providing a substrate having a high-k layer formed thereon, on a substrate holder in a process chamber, and creating a plasma in the process chamber to thereby expose the high-k layer to the plasma. RF power is applied to the substrate holder, the RF power having a characteristic to reduce a rate of formation of an oxide interface layer located between the substrate and the high-k layer. A device includes a feature etched in a high-k layer. The etch profile of the device can include a reduced bird's beak, and a surface of the substrate in an etched region can be substantially coplanar with a substrate under a non-etched area.

摘要翻译： 用于等离子体处理高k层的方法包括在处理室中的衬底保持器上提供其上形成有高k层的衬底，并在处理室中产生等离子体，从而将高k层暴露于 等离子体。 RF功率施加到衬底保持器，RF功率具有降低位于衬底和高k层之间的氧化物界面层的形成速率的特性。 一种器件包括蚀刻在高k层中的特征。 器件的蚀刻轮廓可以包括缩小的鸟嘴，并且蚀刻区域中的衬底的表面可以在非蚀刻区域下与衬底基本上共面。

公开(公告)号：US07361608B2

公开(公告)日：2008-04-22

申请号：US10954104

申请日：2004-09-30

申请人： Akiteru Ko ,  Annie Xia ,  Lee Chen

发明人： Akiteru Ko ,  Annie Xia ,  Lee Chen

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/0234 ,  H01J37/32706 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31645 ,  H01L29/517

摘要： A method for plasma processing a high-k layer includes providing a substrate having a high-k layer formed thereon, on a substrate holder in a process chamber, and creating a plasma in the process chamber to thereby expose the high-k layer to the plasma. RF power is applied to the substrate holder, the RF power having a characteristic to reduce a rate of formation of an oxide interface layer located between the substrate and the high-k layer. A device includes a feature etched in a high-k layer. The etch profile of the device can include a reduced bird's beak, and a surface of the substrate in an etched region can be substantially coplanar with a substrate under a non-etched area.

摘要翻译： 用于等离子体处理高k层的方法包括在处理室中的衬底保持器上提供其上形成有高k层的衬底，并在处理室中产生等离子体，从而将高k层暴露于 等离子体。 RF功率施加到衬底保持器，RF功率具有降低位于衬底和高k层之间的氧化物界面层的形成速率的特性。 一种器件包括蚀刻在高k层中的特征。 器件的蚀刻轮廓可以包括缩小的鸟嘴，并且蚀刻区域中的衬底的表面可以在非蚀刻区域下与衬底基本上共面。

公开(公告)号：US07172969B2

公开(公告)日：2007-02-06

申请号：US10926403

申请日：2004-08-26

申请人： Annie Xia ,  Hiromasa Mochiki ,  Arpan P Mahorowala

发明人： Annie Xia ,  Hiromasa Mochiki ,  Arpan P Mahorowala

IPC分类号： H01L21/302

CPC分类号： H01L21/0338 ,  H01L21/0332 ,  H01L21/28123 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139

摘要： A method and system is described for preparing a film stack, and forming a feature in the film stack using a plurality of dry etching processes. The feature formed in the film stack can include a gate structure having a critical dimension of approximately 25 nm or less. This critical dimension can be formed in the polysilicon layer using four mask layers.

摘要翻译： 描述了一种制备薄膜叠层的方法和系统，并且使用多个干蚀刻工艺在薄膜叠层中形成特征。 形成在膜堆叠中的特征可以包括具有约25nm或更小的临界尺寸的栅极结构。 该临界尺寸可以使用四个掩模层在多晶硅层中形成。

公开(公告)号：US20060051964A1

公开(公告)日：2006-03-09

申请号：US10926403

申请日：2004-08-26

申请人： Annie Xia ,  Hiromasa Mochiki ,  Arpan Mahorowala

发明人： Annie Xia ,  Hiromasa Mochiki ,  Arpan Mahorowala

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/0338 ,  H01L21/0332 ,  H01L21/28123 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139

摘要： A method and system is described for preparing a film stack, and forming a feature in the film stack using a plurality of dry etching processes. The feature formed in the film stack can include a gate structure having a critical dimension of approximately 25 nm or less. This critical dimension can be formed in the polysilicon layer using four mask layers.

摘要翻译： 描述了一种制备薄膜叠层的方法和系统，并且使用多个干蚀刻工艺在薄膜叠层中形成特征。 形成在膜堆叠中的特征可以包括具有约25nm或更小的临界尺寸的栅极结构。 该临界尺寸可以使用四个掩模层在多晶硅层中形成。

公开(公告)号：US20060049139A1

公开(公告)日：2006-03-09

申请号：US10926404

申请日：2004-08-26

申请人： Annie Xia ,  Hiromasa Mochiki ,  Arpan Mahorowala

发明人： Annie Xia ,  Hiromasa Mochiki ,  Arpan Mahorowala

IPC分类号： C23F1/00 ,  B44C1/22

CPC分类号： H01L21/31116 ,  H01L21/32139

摘要： A method and system is described for etching a tunable etch resistant anti-reflective (TERA) coating. The TERA coating can be utilized, for example, as a hard mask, or as an anti-reflective coating for complementing a lithographic structure. The TERA coating can include a structural formula R:C:H:X, wherein R is selected from the group consisting of Si, Ge, B, Sn, Fe, Ti, and combinations thereof, and wherein X is not present or is selected from the group consisting of one or more of O, N, S, and F. During the formation of a structure in a film stack, a pattern is transferred to the TERA coating using dry plasma etching having a SF6-based etch chemistry.

摘要翻译： 描述了用于蚀刻可调蚀抗蚀抗反射（TERA）涂层的方法和系统。 TERA涂层可以用作例如硬掩模，或作为用于补充光刻结构的抗反射涂层。 TERA涂层可以包括结构式R：C：H：X，其中R选自Si，Ge，B，Sn，Fe，Ti及其组合，并且其中X不存在或被选择 从由O，N，S和F中的一种或多种组成的组中。在膜堆叠中形成结构期间，使用具有SF 6的干等离子体蚀刻将图案转移到TERA涂层， SUB>基蚀刻化学。