公开(公告)号：US10262860B2

公开(公告)日：2019-04-16

申请号：US15741737

申请日：2017-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  South China University of Technology

Inventor： Liangchen Yan ,  Xiaoguang Xu ,  Linfeng Lan ,  Lei Wang ,  Junbiao Peng

IPC: H01L21/027 ,  H01L21/02 ,  H01L29/417 ,  H01L27/12 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: The present application discloses a method of fabricating a plurality of electrodes. The method includes forming a hydrophobic pattern containing a hydrophobic material on a base substrate, the hydrophobic pattern has a first ridge on a first edge of the hydrophobic pattern, the hydrophobic pattern has a thickness at the first ridge greater than that in a region outside a region corresponding to the first ridge; removing a portion of the hydrophobic pattern outside the region corresponding to the first ridge; and forming a first electrode on a first side of the first ridge and a second electrode on a second side of the first ridge.

公开(公告)号：US20180138037A1

公开(公告)日：2018-05-17

申请号：US15574154

申请日：2017-04-25

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  South China University of Technology

Inventor： Liangchen Yan ,  Guangcai Yuan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L21/02 ,  H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H01L21/443

CPC classification number: H01L21/02565 ,  G02F1/1368 ,  H01L21/02422 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/443 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869

Abstract: A method for manufacturing a thin film transistor is disclosed. The method includes: manufacturing a gate electrode, a gate insulation layer, an active layer, a source electrode and a drain electrode on a substrate. The active layer is formed from a zirconium indium oxide semiconductor material by a solution process. A thin film transistor, an array substrate, a method for manufacturing an array substrate, a display panel and a display device are also disclosed.

公开(公告)号：US10141340B2

公开(公告)日：2018-11-27

申请号：US15108678

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  South China University of Technology

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/14 ,  H01L27/15 ,  H01L27/12 ,  H01L21/28 ,  H01L29/786 ,  H01L29/49 ,  H01L29/66

Abstract: In accordance with some embodiments of the disclosed subject matter, a TFT, a related TFT array substrate, fabricating methods thereof, a display panel and a display device containing the same are provided. A method for fabricating a TFT is provided, the method comprising: forming an initial conductive layer on a base substrate; performing an oxidization process to partially oxidize the initial conductive layer to form an oxidized insulating sub-layer and a non-oxidized conductive sub-layer; and forming an active layer, a source electrode and a drain electrode over the oxidized insulating sub-layer.

公开(公告)号：US09806097B2

公开(公告)日：2017-10-31

申请号：US15038127

申请日：2015-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L29/10 ,  H01L29/12 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/045 ,  H01L29/26 ,  H01L29/66969 ,  H01L29/7869

Abstract: A metal oxide semiconductor thin film, a thin film transistor (TFT), methods for fabricating the metal oxide semiconductor thin film and the TFT, and a display apparatus are provided. In some embodiments, the metal oxide semiconductor comprises: a first metal element, a second metal element and a third metal element, wherein: the first metal element is at least one of scandium, yttrium, aluminum, indium, and a rare earth element; the second metal element is at least one of calcium, strontium, and barium; and the third metal element is at least one of titanium and tin.

公开(公告)号：US20180337201A1

公开(公告)日：2018-11-22

申请号：US15741737

申请日：2017-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  South China University of Technology

Inventor： Liangchen Yan ,  Xiaoguang Xu ,  Linfeng Lan ,  Lei Wang ,  Junbiao Peng

IPC: H01L27/12 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L27/1262 ,  H01L21/28 ,  H01L27/124 ,  H01L27/1292 ,  H01L29/06 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/786 ,  H01L29/7869

Abstract: The present application discloses a method of fabricating a plurality of electrodes. The method includes forming a hydrophobic pattern containing a hydrophobic material on a base substrate, the hydrophobic pattern has a first ridge on a first edge of the hydrophobic pattern, the hydrophobic pattern has a thickness at the first ridge greater than that in a region outside a region corresponding to the first ridge; removing a portion of the hydrophobic pattern outside the region corresponding to the first ridge; and forming a first electrode on a first side of the first ridge and a second electrode on a second side of the first ridge.

公开(公告)号：US09917205B2

公开(公告)日：2018-03-13

申请号：US15123177

申请日：2015-09-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L21/02 ,  H01L29/786 ,  H01L21/34 ,  H01L29/24 ,  H01L27/12 ,  H01L29/66

CPC classification number: H01L29/7869 ,  H01L21/02 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/02565 ,  H01L21/34 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78696

Abstract: This disclosure discloses an oxide semiconductor thin film, a thin film transistor, a manufacturing method and a device, belonging to the field of flat panel display. The oxide semiconductor thin film is made of an oxide containing zirconium and indium. A method of manufacturing the oxide semiconductor thin film comprises preparing a target using the oxide containing zirconium and indium, and sputtering the target to obtain the oxide semiconductor thin film.

公开(公告)号：US09917157B2

公开(公告)日：2018-03-13

申请号：US15303231

申请日：2015-10-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/24 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/66 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78681 ,  H01L29/7869 ,  H01L29/78696

Abstract: The present disclosure provides a TFT, an array substrate, their manufacturing method, and a display device. The method for manufacturing the TFT includes a step of forming a pattern of a semiconductor active layer on a transparent substrate through a patterning process, and the pattern of the semiconductor active layer includes a lanthanum boride pattern.

公开(公告)号：US20170154905A1

公开(公告)日：2017-06-01

申请号：US15122155

申请日：2015-10-09

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/10 ,  H01L29/423 ,  H01L21/324 ,  H01L29/66 ,  H01L29/417 ,  H01L29/786 ,  H01L21/3213

Abstract: This disclosure provides a thin film transistor and the preparation method thereof, an array substrate, and a display panel, so as to solve the problem that the active layer is prone to be corroded when a metal oxide thin film transistor is produced by a back channel etching process. The preparation method comprises: forming a gate electrode metal thin film on a base substrate, and allowing the gate electrode metal thin film to form a gate electrode metal layer comprising a gate electrode by a patterning process; forming a gate electrode insulating layer on the gate electrode metal layer; forming an active layer on the gate electrode insulating layer; preparing a metal nanoparticle layer on the active layer, said metal nanoparticle layer being used as an etching protection layer; forming a source and drain electrode metal thin film on the base substrate on which the above processes are finished, and allowing the source and drain electrode metal thin film to form a source and drain electrode metal layer comprising a source electrode and a drain electrode by a patterning process, wherein the source electrode and the drain electrode cover a part of the metal nanoparticle layer; removing or oxidizing the part of the metal nanoparticle layer which is not covered by the source electrode and the drain electrode in an oxygen-containing atmosphere; and forming a passivation layer on the source and drain electrode metal layer.

公开(公告)号：US10439070B2

公开(公告)日：2019-10-08

申请号：US15515004

申请日：2016-05-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Liangchen Yan ,  Guangcai Yuan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L29/786 ,  H01L29/51 ,  C23C14/18 ,  C23C14/20 ,  C23C14/58 ,  C25D11/02 ,  C25D11/04 ,  C25D11/26 ,  C25D11/34 ,  H01L21/02 ,  H01L21/443 ,  H01L29/24 ,  H01L29/49 ,  H01L29/66 ,  C23C14/16

Abstract: A thin-film transistor (TFT) and a manufacturing method thereof. The manufacturing method for the TFT includes: depositing metal film layers on a substrate by a direct current (DC) sputtering method; and forming a metal oxide film layer or metal oxide film layers by completely oxidizing or partially oxidizing the metal film layers. The TFT includes a gate electrode layer and a gate insulating layer which are tightly integrated.

公开(公告)号：US10204922B2

公开(公告)日：2019-02-12

申请号：US15303357

申请日：2016-01-13

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  SOUTH CHINA UNIVERSITY OF TECHNOLOGY

Inventor： Guangcai Yuan ,  Liangchen Yan ,  Xiaoguang Xu ,  Lei Wang ,  Junbiao Peng ,  Linfeng Lan

IPC: H01L27/12 ,  H01L29/786 ,  G02F1/1335 ,  H01L27/15 ,  H01L33/00

Abstract: A metal oxide thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are provided. The manufacturing method of the metal oxide thin film transistor includes forming a gate electrode (141), a gate insulating layer (130), an active layer (113) and source and drain electrodes (121, 122) of a thin film transistor on a base substrate. The active layer is prepared by using a metal oxide thin film, and an electrochemical oxidation process is performed on the metal oxide thin film during preparing the active layer, and the metal oxide thin film after the electrochemical oxidation process is patterned to form the active layer of the thin film transistor. By using the manufacturing method of the embodiment, oxygen vacancies of the metal oxide thin film can be reduced, a concentration of free carriers thereof can be controlled, the prepared thin film transistor has good stability, and it is not necessary to add additional photolithography process, slightly affecting the cost.