公开(公告)号：US20240282862A1

公开(公告)日：2024-08-22

申请号：US18024990

申请日：2022-03-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Fengjuan LIU ,  Jianye ZHANG ,  Yuhang LU ,  Hongda SUN ,  Pan XU

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78645

Abstract: A thin film transistor including: a base substrate, and an active layer and a gate on the base substrate, where the active layer includes a first part and a second part, a conductivity of the second part is greater than a conductivity of the first part; an orthographic projection of the gate on the base substrate covers an orthographic projection of the first part on the base substrate, and the orthographic projection of the gate on the base substrate does not overlap an orthographic projection of the second part on the base substrate; and the first part includes a plurality of first sub-parts, and two sides of any one first sub-part in a trend direction of the active layer are each connected to the second part.

公开(公告)号：US20240212773A1

公开(公告)日：2024-06-27

申请号：US17909129

申请日：2021-10-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fengjuan LIU ,  Ce NING ,  Wei LIU ,  Dini XIE ,  Yuhang LU

IPC: G11C19/28 ,  G09G3/20

CPC classification number: G11C19/28 ,  G09G3/2092 ,  G09G2300/0842 ,  G09G2310/0267 ,  G09G2310/0286

Abstract: The present disclosure provides a shift register unit, and driving method therefor, a gate drive circuit, and a display device, belonging to the field of display technologies. The shift register unit includes an input circuit, a compensation control circuit, and an output circuit. The input circuit can control a potential of a first node under control of an input signal provided by an input signal terminal and control a potential of a reference node under control of the input signal and an input control signal provided by an input control terminal. The compensation control circuit can adjust the potential of the first node based on the potential of the reference node under control of a first clock signal provided by a first clock signal terminal. In this way, the flexibility of controlling the first node is improved. Thus, the output circuit can flexibly output a drive signal to an output terminal coupled to a gate line under control of the first node.

公开(公告)号：US20250031465A1

公开(公告)日：2025-01-23

申请号：US18034094

申请日：2021-12-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Pengfei GU ,  Je HUANG ,  Feifei LI ,  Yuhang LU ,  Rui HUANG ,  Fengjuan LIU

IPC: H01L27/146

Abstract: A photoelectric sensor and a substrate are disclosed. The photoelectric sensor includes a photoelectric conversion layer, a first electrode and a second electrode, wherein the first electrode is arranged on a side of the photoelectric conversion layer, and the second electrode is arranged on a side of the photoelectric conversion layer and is spaced apart from the first electrode; wherein the first electrode and the second electrode are configured to drive the photoelectric conversion layer; and in a direction perpendicular to a surface of the photoelectric conversion layer, the first electrode and the second electrode are overlapped with the photoelectric conversion layer respectively, and the photoelectric conversion layer includes an oxide semiconductor material.

公开(公告)号：US20240371887A1

公开(公告)日：2024-11-07

申请号：US18773582

申请日：2024-07-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yuhang LU ,  Fengjuan LIU ,  Hehe HU ,  Zhengliang LI ,  Ce NING ,  Guangcai YUAN ,  Dandan ZHOU ,  Cheng XU

IPC: H01L27/12 ,  G02F1/1333 ,  G02F1/1362 ,  G02F1/1368 ,  H01L25/075 ,  H01L29/66 ,  H01L29/786 ,  H10K59/121

Abstract: A thin film transistor includes a first active layer, a second active layer, a first electrode, a second electrode and a third electrode. The first active layer includes a first surface away from a substrate. The second active layer includes a second surface in contact with the first surface. The first electrode, the first active layer and the second active layer have an overlapping region. The second electrode, the first active layer and the second active layer have an overlapping region. The third electrode, the first active layer and the second active layer have an overlapping region, and the third electrode is opposite to the second electrode. The second surface is located within the first surface, and a distance between at least part of a border of the second surface and a border of the first surface is less than or equal to 0.5 μm.

公开(公告)号：US20230317826A1

公开(公告)日：2023-10-05

申请号：US18022620

申请日：2022-03-09

Applicant: BOE Technology Group Co., Ltd.

Inventor： Fengjuan LIU ,  Dongfang WANG ,  Wei LIU ,  Yuhang LU ,  Hongda SUN ,  Ce NING ,  Guangcai YUAN

IPC: H01L29/66 ,  H01L29/786 ,  H01L29/40

CPC classification number: H01L29/66742 ,  H01L29/401 ,  H01L29/7869

Abstract: A method for manufacturing a thin film transistor, and a thin film transistor are provided. The method includes: forming an active layer on a substrate by a single patterning process; forming a gate insulating layer by deposition on a side of the active layer away from the substrate; forming a first via hole and a second via hole penetrating through the gate insulating layer by a single patterning process, the first and second via holes being located at two ends of the active layer respectively; and forming a first electrode, a gate electrode, and a second electrode on the gate insulating layer by a single patterning process, the first and second electrodes being connected to the active layer through the first and second via holes, respectively, and an orthographic projection of the gate electrode on the substrate at least partially overlapping that of the active layer on the substrate.