Abstract:
High efficiency gallium phosphide electroluminescent PN junction devices capable of emitting visible light at room temperature are prepared by depositing an epitaxial layer of N-type gallium phosphide by conventional techniques upon a solution grown P-type gallium phosphide crystal and annealing the resultant junction at temperatures ranging from 450*-725* C.
Abstract:
ELECTROLUMINESCENT P-N DIODES WHICH CONTAIN SULPHUR TO PRODUCE AN EXCESS DONOR CONCENTRATION OF 5 X 1016 TO 2X10**17 CM.-3 EXHIBIT EFFICIENCIES OF AT LEAST AN ORDER OF MAGNITUDE GREATER THAN FOR OTHER N-TYPE DOPANTS. WHEN THE DIODES ARE PRODUCED IN AN AMMONIA ATMOSPHERE, EFFICIENCY IS INCREASED STILL FURTHER.