Gallium phosphide electroluminescent junction device
    9.
    发明授权
    Gallium phosphide electroluminescent junction device 失效
    磷灰石电致发光结点装置

    公开(公告)号:US3584267A

    公开(公告)日:1971-06-08

    申请号:US3584267D

    申请日:1969-04-15

    CPC classification number: H01L33/00

    Abstract: High efficiency gallium phosphide electroluminescent PN junction devices capable of emitting visible light at room temperature are prepared by depositing an epitaxial layer of N-type gallium phosphide by conventional techniques upon a solution grown P-type gallium phosphide crystal and annealing the resultant junction at temperatures ranging from 450*-725* C.

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