Abstract:
The current output amplitude of a charge storage diode in its reverse conducting condition is absolutely limited by detecting the attainment of a predetermined output level and in response thereto applying an aiding feedback to the diode to terminate the current rapidly by purging the remaining carriers at a much faster rate. This mode of diode operation is employed with current detection in a memory drive circuit. One aspect of the fast diode discharge mode is also employed in a time shared sample and hold circuit.
Abstract:
The output of a charge storage diode in its reverse conducting spike discharge mode utilized to impose a fixed supplemental charge on a capacitor in each of plural sample and hold circuits just after a signal sample charge has been placed in the capacitor. Isolating diodes couple a common signal source to the respective capacitors, and each diode is reversely biased by the total of the sample and supplemental charges in its holding capacitor to prevent crosstalk among the various holding capacitors. A memory drive circuit and a single sample and hold circuit are also shown to demonstrate the mentioned spike discharge mode of charge storage diode operation.
Abstract:
The two sets of rail circuits of a selective switching matrix are arranged in parallel arrays extending colinearly in substantially the same plane. Their cross-point interconnecting circuits are each coupled between points of their respective rail circuits which are spaced from the driving points of such rail circuits by complementary distances totaling a predetermined magnitude which is the same for all of the interconnecting circuits. Such interconnecting circuits are also of equal extent so that equal circuit path lengths are included between any pair of driving points for said first and second sets of rail circuits. Particular matrix configurations utilizing integrated circuit techniques to advantage are also shown.
Abstract:
A cross-point matrix memory including, in each cross-point circuit, a memory cell having a charge storage diode and a metal semiconductor diode in a series aiding circuit arrangement. An information bit is written into any selected memory cell by forward biasing both diodes of the selected cell thereby generating minority carrier charge in the charge storage diode. Thereafter the charge is stored in the cell by applying reverse bias to the two diodes for transferring the charge to the junction capacitance of the metal semiconductor diode. The information bit stored in the selected cell is read out by applying a forward bias voltage ramp function to the cell.
Abstract:
A series of charge-storage diodes having different minoritycarrier lifetimes are connected between power supply lines and are arranged so that a normally nonconducting signal branch is in parallel with the shortest minority-carrier-lifetime chargestorage diode. The charge-storage diodes and the signal branch respond to a short circuit condition across the power supply lines by switching reverse polarity minority-carrier current, conducted through the charge-storage diodes, from the short minority-carrier-lifetime diode to the signal branch. A signal then is developed in the signal branch for enabling a protection device to short circuit the power supply lines or for taking other desired action.
Abstract:
A diode characterized by a long minority carrier lifetime and supplied with a charging current is connected in parallel with a pair of electrical contacts. When the contacts are opened the diode provides, in effect, a short circuit across the contacts thereby preventing arcing for a predetermined period until the accumulated charge in the diode is depleted.
Abstract:
A GROUP OF DIRECT COUPLING ARRANGEMENTS FOR A MAGNETIC MEMORY PROVIDE DESIGN ALTERNATIVES WHICH REDUCE MAGNETIC MEMORY CYCLE TIME AND FABRICATION COST. IN EACH ARRANGEMENT, BALANCED DIGIT LINES, WHICH ARE ARRANGED IN TWO SYMMETRICAL MODULES, ARE DIRECT CURRENT COUPLED TO BOTH A DIGIT DRIVE CIRCUIT AND AN AMPLIFIER-DETECTOR CIRCUIT. WORD SELECTION CIRCUITS ARE ARRANGED SYMMETRICALLY TO COUPLE SIMILAR SPURIOUS NOISE SIGNALS INTO THE FIGIT LINES OF BOTH SYMMETRICAL MODULES. THE AMPLIFIER-DETECTOR CIRCUIT IS ARRANGED TO OPERATE IN ITS REGION OF LINEAR CONDUCTION IN RESPONSE TO DIGIT DRIVE SIGNALS AND TO CONVERT INFORMATION SIGNALS FROM THE DIGIT LINES INTO COMPLEMENTARY LEVEL OUTPUT SIGNALS WITHOUT REFLECTING AN IMPEDANCE UNBALANCE ONTO THE DIGIT LINES. IN EACH ARRANGEMENT, A DIRECT CURRENT COUPLINE CIRCUIT IS DESIGNED SO THAT THE DIGIT DRIVE SIGNALS AND THE NOISE SIGNALS ARE REJECTED AND INFORMATION SIGNALS ARE DETECTED.