公开(公告)号：US3796932A

公开(公告)日：1974-03-12

申请号：US3796932D

申请日：1971-06-28

Applicant: BELL TELEPHONE LABOR INC

Inventor： AMELIO G ,  KRAMBECK R ,  PICKAR K

IPC: G11C19/28 ,  H01L29/10 ,  H01L29/768 ,  H01L11/14

CPC classification number: H01L29/1062 ,  G11C19/282 ,  H01L29/76833 ,  H01L29/76841 ,  H01L29/76866

Abstract: In Charge Coupled Apparatus laterally graded distributions of immobile charge are disposed under the electrodes and, optionally, between the electrodes to enhance the desired unidirectionality of charge transfer and, optionally, to enable the gap regions between electrodes to act as active storage sites in the information channel. A graded distribution of immobile charge under an electrode provides a built-in electric field in the desired direction of charge propagation so that fieldenhanced charge transfer, and concomitant improved speed, is effected. A graded distribution of immobile charge in a gap between electrodes provides a built-in, suitably asymmetric potential well in the gap. This built-in potential well in the gap can be used as a temporary storage site for charge carriers (much like any other potential well in a CCD) to enable one-phase operation and more compact devices.

公开(公告)号：US3717790A

公开(公告)日：1973-02-20

申请号：US3717790D

申请日：1971-06-24

Applicant: BELL TELEPHONE LABOR INC

Inventor： MATHEWS J ,  MOLINE R ,  DALTON J ,  MACRAE A ,  PICKAR K ,  SEIDEL H

IPC: H01J9/233 ,  H01L21/00 ,  H01L27/00 ,  H01L17/00 ,  H01L15/00

CPC classification number: H01L21/00 ,  H01J9/233 ,  H01L27/00

Abstract: The specification describes processes using ion implantation for preparing silicon diode array targets for video camera tubes. Bulk silicon prepared in the conventional way has sufficient nonuniformity over the target area to produce contrast patterns in the video output. This effect can be eliminated by initially preparing high resistivity bulk material and implanting the bulk impurities to obtain the desired bulk resistivity. Advantageous procedures for implanting the diodes are also described.

Abstract translation: 该说明书描述了使用离子注入来制备用于摄像机管的硅二极管阵列靶的工艺。 以常规方式制备的散装硅在目标区域上具有足够的不均匀性，以在视频输出中产生对比度图案。 通过初始制备高电阻率散装材料并植入大块杂质以获得所需的体电阻率，可以消除这种影响。 还描述了用于注入二极管的有利程序。