公开(公告)号：US3737343A

公开(公告)日：1973-06-05

申请号：US3737343D

申请日：1971-04-19

Applicant: BELL TELEPHONE LABOR INC

Inventor： BASSECHES H ,  GERSTENBERG D ,  LEPSELTER M ,  MACRAE A ,  SCHOEN J

IPC: C23C14/14 ,  C23C14/48 ,  C23C14/58 ,  H01C17/12 ,  H01L21/70 ,  B44D1/50

CPC classification number: C23C14/14 ,  C23C14/48 ,  C23C14/58 ,  C23C14/5806 ,  C23C14/5833 ,  H01C17/12 ,  H01L21/707

Abstract: A TECHNIQUE FOR THE PREPARATION OF TANTALUM-ALUMINUM ALLOY FILMS MANIFESTING RESISTIVITIES WITHIN THE RANGE OF 10-**3 TO 10-**2 OHM-CENTIMETERS WHICH ARE STABLE AT TEMPERATURES OF THE ORDER OF 400*C. INVOLVES DEPOSITING TANTALUM-ALUMINUM ALLOY FILMS BY CONVENTIONAL CONDENSATION TECHNIQUES, IMPLANTING NITROGEN OR OXYGEN IONS IN THE DEPOSITED FILM AND ANNEALING THE RESULTANT ASSEMBLY. THE FILMS SO PRODUCED ARE THE FIRST HIGH RESISTIVITY FILMS TO BE MADE AVAILABLE FOR USE IN THE FABRICATION OF SEMICONDUCTOR DEVICES WHICH ARE NORMALLY SUBJECTED TO TEM-

PERATURES RANGING UP TO 100*V. DURING THE PROCESSING SEQUENCE WHICH MANIFEST SUPERIOR STABILITY CHARACTERISTICS.

公开(公告)号：US3717790A

公开(公告)日：1973-02-20

申请号：US3717790D

申请日：1971-06-24

Applicant: BELL TELEPHONE LABOR INC

Inventor： MATHEWS J ,  MOLINE R ,  DALTON J ,  MACRAE A ,  PICKAR K ,  SEIDEL H

IPC: H01J9/233 ,  H01L21/00 ,  H01L27/00 ,  H01L17/00 ,  H01L15/00

CPC classification number: H01L21/00 ,  H01J9/233 ,  H01L27/00

Abstract: The specification describes processes using ion implantation for preparing silicon diode array targets for video camera tubes. Bulk silicon prepared in the conventional way has sufficient nonuniformity over the target area to produce contrast patterns in the video output. This effect can be eliminated by initially preparing high resistivity bulk material and implanting the bulk impurities to obtain the desired bulk resistivity. Advantageous procedures for implanting the diodes are also described.

Abstract translation: 该说明书描述了使用离子注入来制备用于摄像机管的硅二极管阵列靶的工艺。 以常规方式制备的散装硅在目标区域上具有足够的不均匀性，以在视频输出中产生对比度图案。 通过初始制备高电阻率散装材料并植入大块杂质以获得所需的体电阻率，可以消除这种影响。 还描述了用于注入二极管的有利程序。