公开(公告)号：US3591840A

公开(公告)日：1971-07-06

申请号：US3591840D

申请日：1969-10-27

Applicant: BELL TELEPHONE LABOR INC

Inventor： GLINSKI VINCENT J

IPC: H01L21/82 ,  H01L27/06 ,  H01L29/8605 ,  H01L19/00

CPC classification number: H01L29/8605 ,  H01L21/82 ,  H01L27/0647 ,  Y10S148/036 ,  Y10S148/049 ,  Y10S148/085 ,  Y10S148/151

Abstract: A self-isolating, gate-controllable, space-charge-limited impedance device is provided for use advantageously in combination with other devices in semiconductor integrated circuits. In the impedance device, space-charge-limited current between a plurality of spaced surface zones is controlled by applying a potential to a surface layer through one or more electrodes.

公开(公告)号：US3701198A

公开(公告)日：1972-10-31

申请号：US3701198D

申请日：1970-08-14

Applicant: BELL TELEPHONE LABOR INC

Inventor： GLINSKI VINCENT J

IPC: H01L21/765 ,  H01L27/00 ,  B01J17/00

CPC classification number: H01L21/765 ,  H01L27/00

Abstract: An annular PN junction in conjunction with a relatively high resistivity substrate enables improved means for isolating functional elements in a monolithic semiconductor integrated circuit. In a semiconductor wafer, localized emitter zones and collector zones extend to a common depth from the surface of the wafer. The collector zone is annular in shape and encloses laterally the emitter zone. The resistivities and spacings of the regions in the wafer are such that with the annular PN junction reverse-biased, the depletion region therefrom extends completely underneath the material enclosed by the annular zone and thereby provides electrical isolation for a functional element in the enclosed material.

Abstract translation: 结合相对高电阻率的衬底的环形PN结使得能够改进用于隔离单片半导体集成电路中的功能元件的装置。 在半导体晶片中，局部发射区和集电区延伸到与晶片表面相同的深度。 收集器区域是环形的，并且侧向包围发射区。 晶片中的区域的电阻率和间距是这样的，即环形PN结反向偏置，其耗尽区完全在由环形区域包围的材料下方延伸，从而为封闭材料中的功能元件提供电气隔离。

公开(公告)号：US3653988A

公开(公告)日：1972-04-04

申请号：US3653988D

申请日：1969-04-03

Applicant: BELL TELEPHONE LABOR INC

Inventor： GLINSKI VINCENT J ,  MURPHY BERNARD T

IPC: H01L21/74 ,  H01L21/761 ,  H01L21/765 ,  H01L27/07 ,  H01L29/00 ,  H01L7/44 ,  B01J17/00 ,  H01L3/00

CPC classification number: H01L27/0716 ,  H01L21/74 ,  H01L21/761 ,  H01L21/765 ,  H01L29/00 ,  Y10S148/036 ,  Y10S148/037 ,  Y10S148/085 ,  Y10S438/919 ,  Y10S438/921

Abstract: This method of fabricating junction-isolated semiconductor integrated circuit devices eliminates the photolithographic masking operation associated with a base diffusion by performing a non-selective P-type base diffusion into the entire surface of a thin N-type epitaxial layer. The lateral extent of base zones and resistor zones is defined by selectively diffusing low resistivity N-type deep contact zones completely through the epitaxial layer to intersect the entire perimeter of a buried Nlayer. Junction isolation, consisting of either back-to-back diodes or junction field-effect transistors, may be used.

Abstract translation: 制造结隔离半导体集成电路器件的这种方法通过对薄N型外延层的整个表面进行非选择性P型基极扩散来消除与基极扩散相关的光刻掩模操作。 通过选择性地将低电阻率的N型深接触区域完全扩散通过外延层与掩埋的N层的整个周边相交，来限定基极区域和电阻器区域的横向范围。 可以使用由背对背二极管或结型场效应晶体管组成的结隔离。

公开(公告)号：US3614555A

公开(公告)日：1971-10-19

申请号：US3614555D

申请日：1968-12-23

Applicant: BELL TELEPHONE LABOR INC

Inventor： GLINSKI VINCENT J

IPC: H01L21/765 ,  H01L21/82 ,  H01L27/00 ,  H01L29/00 ,  H01L11/00 ,  H01L19/00

CPC classification number: H01L27/00 ,  H01L21/765 ,  H01L21/82 ,  H01L29/00 ,  Y10S148/036 ,  Y10S148/037 ,  Y10S148/145

Abstract: An annular PN junction in conjunction with a relatively high resistivity substrate enables improved means for isolating functional elements in a monolithic semiconductor integrated circuit. In a semiconductor wafer, localized emitter zones and collector zones extend to a common depth from the surface of the wafer. The collector zone is annular in shape and encloses laterally the emitter zone. The resistivities and spacings of the regions in the wafer are such that with the annular PN junction reverse-biased, the depletion region therefrom extends completely underneath the material enclosed by the annular zone and thereby provides electrical isolation for a functional element in the enclosed material.