公开(公告)号：US3484312A

公开(公告)日：1969-12-16

申请号：US3484312D

申请日：1966-12-28

Applicant: BELL TELEPHONE LABOR INC

Inventor： ERMANIS FELIX ,  SCHWARTZ BERTRAM

IPC: H01L21/00 ,  H01L21/24 ,  H01L23/58 ,  H01L29/207 ,  H01L7/46

CPC classification number: H01L23/58 ,  H01L21/00 ,  H01L21/24 ,  H01L29/207 ,  H01L2924/0002 ,  Y10S148/018 ,  Y10S148/02 ,  H01L2924/00

公开(公告)号：US3929589A

公开(公告)日：1975-12-30

申请号：US44065774

申请日：1974-02-08

Applicant: BELL TELEPHONE LABOR INC

Inventor： ERMANIS FELIX ,  SCHWARTZ BERTRAM

IPC: C25D5/02 ,  C25D11/32 ,  H01L21/00 ,  H01L21/3063 ,  H01L21/316 ,  H01L29/00 ,  C23B11/02

CPC classification number: H01L21/00 ,  C25D5/02 ,  C25D11/32 ,  H01L21/30635 ,  H01L21/31654 ,  H01L29/00

Abstract: A method for selectively oxidizing the surface of a III-V compound semiconductor wafer. A photoresist mask is first formed on the surface of the semiconductor leaving exposed the areas to be oxidized. The semiconductor is then made the anode in an electrolytic cell wherein the electrolyte comprises water and a source of ions for adjusting the pH or providing conductivity to the solution. In a preferred embodiment, the wafer is a gallium containing compound semiconductor and in particular GaAs, and the electrolyte is water and an ammonium acid phosphate. The oxide is grown electrolytically only into the exposed areas of the wafer, and the photoresist may then be stripped off leaving the desired oxide pattern.

Abstract translation: 一种用于选择性氧化III-V族化合物半导体晶片表面的方法。 首先在半导体的表面上形成光致抗蚀剂掩模，从而暴露待氧化的区域。 然后将半导体制成电解池中的阳极，其中电解质包含水和用于调节pH或为溶液提供导电性的离子源。 在优选实施例中，晶片是含镓化合物半导体，特别是GaAs，电解质是水和磷酸铵。 氧化物仅电解生长到晶片的暴露区域中，然后可以剥离光致抗蚀剂，留下所需的氧化物图案。

公开(公告)号：US3898141A

公开(公告)日：1975-08-05

申请号：US44065674

申请日：1974-02-08

Applicant: BELL TELEPHONE LABOR INC

Inventor： ERMANIS FELIX ,  SCHWARTZ BERTRAM

IPC: H01L21/3063 ,  H01L21/316 ,  B23P1/00

CPC classification number: H01L21/02241 ,  H01L21/02258 ,  H01L21/30635 ,  H01L21/31679

Abstract: A method for oxidation and etching of a III-V compound semiconductor in a single solution. The semiconductor is made the anode in an electrolytic cell wherein the electrolyte is water raised to a pH of 8 or above by a source of hydroxyl ions such as NH4OH. When an appropriate electric field is established in the cell, an oxide is grown into the surface of the semiconductor. Then the field is lowered or turned off and the oxide dissolves faster than it is grown resulting in an etching of the semiconductor material previously consumed in forming the oxide. The method permits electrochemical thinning of a semiconductor layer for such uses as FETS and IMPATTS and further allows formation of passivating layers on etched surfaces in situ.

Abstract translation: 在单一溶液中氧化和蚀刻III-V化合物半导体的方法。 将半导体制成电解池中的阳极，其中电解质是通过羟基离子源如NH 4 OH将水升至pH8或更高的pH。 当在电池中建立适当的电场时，氧化物生长到半导体的表面中。 然后场被降低或关闭，并且氧化物比其生长更快地溶解，导致先前在形成氧化物中消耗的半导体材料的蚀刻。 该方法允许半导体层的电化学稀化用于诸如FETS和IMPATTS的用途，并且还允许在蚀刻表面上原位形成钝化层。