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公开(公告)号：US09891520B2
公开(公告)日：2018-02-13
申请号：US14904018
申请日：2014-07-08
Applicant: BASF SE
Inventor： Andreas Klipp , Andrei Honciuc , Chu-Ya Yang
CPC classification number: G03F1/82 , C11D1/004 , G03F1/22 , G03F1/24 , G03F1/68 , G03F7/20 , G03F7/32
Abstract: In a method for cleaning photo masks having patterns with smallest line-space dimensions below 200 nm, a surfactant composition A is used, wherein A contains at least three short-chain perfluorinated groups Rf selected from the group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, and pentafluorosulfanyl and wherein A exhibits, at a 1% by weight aqueous solution, a static surface tension below 25 mN/m.
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2.发明授权Use of compositions comprising a surfactant and a hydrophobizer for avoiding anti pattern collapse when treating patterned materials with line-space dimensions of 50 nm or below 有权使用包含表面活性剂和疏水化剂的组合物，用于在线空间尺寸为50nm或以下时处理图案化材料时避免抗图案塌陷公开(公告)号：US09557652B2
公开(公告)日：2017-01-31
申请号：US14652120
申请日：2013-12-04
Applicant: BASF SE
Inventor： Andreas Klipp , Andrei Honciuc , Günter Oetter , Christian Bittner
CPC classification number: G03F7/422 , C11D1/835 , C11D1/94 , C11D11/0047 , G03F7/2041 , G03F7/405 , H01L21/02057 , H01L21/0273
Abstract: In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95° compared to the contact angle of water to the substrate before such contacting.
Abstract translation: 在处理包括线空间尺寸为50nm或更小的图案的基材的方法中，通过包含至少一种非离子表面活性剂A和至少一种疏水化剂B的水性组合物漂洗基材。至少一种表面活性剂A 具有10mN / m至35mN / m的平衡表面张力，其由临界胶束浓度的至少一种表面活性剂A在水中的溶液测定。 疏水化剂B被选择为使得水与基底的接触角通过使接触基底与水分散体B在水中的溶液相比在接触之前与水接触角相接触而增加5-95°。
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3.发明申请USE OF COMPOSITIONS COMPRISING A SURFACTANT AND A HYDROPHOBIZER FOR AVOIDING ANTI PATTERN COLLAPSE WHEN TREATING PATTERNED MATERIALS WITH LINE-SPACE DIMENSIONS OF 50 NM OR BELOW 有权使用包含表面活性剂和疏水剂的组合物，用于避免在50nm或以下的线空间处理图案的材料时避免图案皱褶公开(公告)号：US20150323871A1
公开(公告)日：2015-11-12
申请号：US14652120
申请日：2013-12-04
Applicant: BASF SE
Inventor： Andreas Klipp , Andrei Honciuc , Günter Oetter , Christian Bittner
IPC: G03F7/42
CPC classification number: G03F7/422 , C11D1/835 , C11D1/94 , C11D11/0047 , G03F7/2041 , G03F7/405 , H01L21/02057 , H01L21/0273
Abstract: In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95° compared to the contact angle of water to the substrate before such contacting.
Abstract translation: 在处理包括线空间尺寸为50nm或更小的图案的基材的方法中，通过包含至少一种非离子表面活性剂A和至少一种疏水化剂B的水性组合物漂洗基材。至少一种表面活性剂A 具有10mN / m至35mN / m的平衡表面张力，其由临界胶束浓度的至少一种表面活性剂A在水中的溶液测定。 疏水化剂B被选择为使得水与基底的接触角通过使接触基底与水分散体B在水中的溶液相比在接触之前与水接触角相接触而增加5-95°。
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公开(公告)号：US20180201885A1
公开(公告)日：2018-07-19
申请号：US15743848
申请日：2016-07-01
Applicant: BASF SE
Inventor： Christian Bittner , Guenter Oetter , Andrei Honciuc , Andreas Klipp , Simon Braun
CPC classification number: C11D11/0047 , C11D1/123 , G03F7/40 , G03F7/425 , G03F7/426
Abstract: The present invention relates to the use of a composition comprising one or more ammonium salt(s) of one or more compounds selected from the group consisting of sulfobutanedioic acid diester(s), (sulfomethyl)-butanedioic acid diester(s), methyl-sulfobutanedioic acid diester(s), sulfoglutaric acid diester(s), and sulfotricarballic acid triester(s), for cleaning or rinsing a product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm and below. The invention also relates to a corresponding method of making a cleaned or rinsed product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below. The invention also relates to a solution with color of HAZEN number below 1000 and/or a turbidity in the range of from 0.08 to 10 NTU, wherein the solution comprises water and one or more ammonium salt(s) and optionally one or more organic solvent compounds. The invention also relates to a method of making a corresponding solution.
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5.发明申请COMPOSITIONS FOR ANTI PATTERN COLLAPSE TREATMENT COMPRISING GEMINI ADDITIVES 审中-公开用于包含GEMINI添加剂的抗皱纹治疗组合物公开(公告)号：US20150159123A1
公开(公告)日：2015-06-11
申请号：US14412737
申请日：2013-07-01
Applicant: BASF SE
Inventor： Andreas Klipp , Andrei Honciuc , Guenter Oetter , Christian Bittner
CPC classification number: C11D11/0047 , C11D1/008 , C11D1/40 , C11D1/62 , G03F7/2041 , G03F7/322 , G03F7/40
Abstract: A method of reducing defects of a semiconductor substrate whereby the substrate is rinsed with an aqueous composition containing a gemini additive of the general formula I after the development of a photoresist or a photolithographic mask wherein X is a divalent group, R1, R2, R3 and R4 are substituted or unsubstituted monovalent groups, n is an integer from 1 to 5, or 1 to 10000 depending on R3 and R4, z is an integer, which is chosen so that the overall surfactant is electrically uncharged, and Z is a counter-ion.
Abstract translation: 一种降低半导体衬底的缺陷的方法，其中在开发光致抗蚀剂或光刻掩模之后，用包含通式I的双子添加剂的水性组合物漂洗衬底，其中X是二价基团，R1，R2，R3和 R4是取代或未取代的单价基团，n是1至5的整数，或1至10000个取决于R3和R4，z是整数，其被选择为使得整个表面活性剂是电不带电的，Z是反 - 离子。
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Patent Agency Ranking
公开(公告)号：US10538724B2
公开(公告)日：2020-01-21
申请号：US15743848
申请日：2016-07-01
Applicant: BASF SE
Inventor： Christian Bittner , Guenter Oetter , Andrei Honciuc , Andreas Klipp , Simon Braun
Abstract: The present invention relates to the use of a composition comprising one or more ammonium salt(s) of one or more compounds selected from the group consisting of sulfobutanedioic acid diester(s), (sulfomethyl)-butanedioic acid diester(s), methyl-sulfobutanedioic acid diester(s), sulfoglutaric acid diester(s), and sulfotricarballic acid triester(s), for cleaning or rinsing a product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm and below. The invention also relates to a corresponding method of making a cleaned or rinsed product comprising a substrate and supported thereon a patterned material layer having line-space structures with a line width of 50 nm or below. The invention also relates to a solution with color of HAZEN number below 1000 and/or a turbidity in the range of from 0.08 to 10 NTU, wherein the solution comprises water and one or more ammonium salt(s) and optionally one or more organic solvent compounds. The invention also relates to a method of making a corresponding solution.
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公开(公告)号：US10385295B2
公开(公告)日：2019-08-20
申请号：US14412737
申请日：2013-07-01
Applicant: BASF SE
Inventor： Andreas Klipp , Andrei Honciuc , Guenter Oetter , Christian Bittner
Abstract: A method of reducing defects of a semiconductor substrate whereby the substrate is rinsed with an aqueous composition containing a gemini additive of the general formula I after the development of a photoresist or a photolithographic mask wherein X is a divalent group, R1, R2, R3 and R4 are substituted or unsubstituted monovalent groups, n is an integer from 1 to 5, or 1 to 10000 depending on R3 and R4, z is an integer, which is chosen so that the overall surfactant is electrically uncharged, and Z is a counter-ion.
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公开(公告)号：US20160238944A9
公开(公告)日：2016-08-18
申请号：US14652120
申请日：2013-12-04
Applicant: BASF SE
Inventor： Andreas Klipp , Andrei Honciuc , Günter Oetter , Christian Bittner
IPC: G03F7/42
CPC classification number: G03F7/422 , C11D1/835 , C11D1/94 , C11D11/0047 , G03F7/2041 , G03F7/405 , H01L21/02057 , H01L21/0273
Abstract: In a method of treating a substrate including patterns having line-space dimensions of 50 nm or below, the substrate is rinsed by an aqueous composition including at least one non-ionic surfactant A and at least one hydrophobizer B. The at least one surfactant A has an equilibrium surface tension of 10 mN/m to 35 mN/m, determined from a solution of the at least one surfactant A in water at the critical micelle concentration. The hydrophobizer B is selected so that the contact angle of water to the substrate is increased by contacting the substrate with a solution of the hydrophobizer B in water by 5-95° compared to the contact angle of water to the substrate before such contacting.
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9.发明申请THE USE OF SURFACTANTS HAVING AT LEAST THREE SHORT-CHAIN PERFLUORINATED GROUPS IN FORMULATIONS FOR PHOTO MASK CLEANING 有权具有至少三个短链全氟化合物组合的表面活性剂在照相胶片清洁剂中的应用公开(公告)号：US20160161846A1
公开(公告)日：2016-06-09
申请号：US14904018
申请日：2014-07-08
Applicant: BASF SE
Inventor： Andreas Klipp , Andrei Honciuc , Chu-Ya Yang
CPC classification number: G03F1/82 , C11D1/004 , G03F1/22 , G03F1/24 , G03F1/68 , G03F7/20 , G03F7/32
Abstract: In a method for cleaning photo masks having patterns with smallest line-space dimensions below 200 nm, a surfactant composition A is used, wherein A contains at least three short-chain perfluorinated groups Rf selected from the group consisting of trifluoromethyl, pentafluoroethyl, 1-heptafluoropropyl, 2-heptafluoropropyl, and pentafluorosulfanyl and wherein A exhibits, at a 1% by weight aqueous solution, a static surface tension below 25 mN/m.
Abstract translation: 在具有小于200nm的线间距尺寸最小的图案的光掩模的方法中，使用表面活性剂组合物A，其中A包含至少三个短链全氟化基团，Rf选自三氟甲基，五氟乙基， 七氟丙基，2-七氟丙基和五氟硫烷基，其中A在1重量％的水溶液中表现出低于25mN / m的静态表面张力。
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10.发明申请COMPOSITION FOR MANUFACTURING INTEGRATED CIRCUIT DEVICES, OPTICAL DEVICES, MICROMACHINES AND MECHANICAL PRECISION DEVICES 审中-公开用于制造集成电路装置，光学装置，微型计算机和机械精密装置的组合物公开(公告)号：US20150192854A1
公开(公告)日：2015-07-09
申请号：US14413252
申请日：2013-07-12
Applicant: BASF SE
Inventor： Andreas Klipp , Andrei Honciuc , Sabrina Montero Pancera , Zoltan Baan
CPC classification number: G03F7/32 , G03F7/2002 , G03F7/2041 , G03F7/322
Abstract: A composition comprising a quaternary ammonium compound for developing photoresists applied to semiconductor substrates is provided. A method for manufacturing integrated circuit devices, optical devices, micromachines and mechanical precision devices is also provided. The pattern collapse can be avoided by prevent swelling of the photoresist by using the improved composition.
Abstract translation: 提供一种包含用于显影应用于半导体衬底的光致抗蚀剂的季铵化合物的组合物。 还提供了一种用于制造集成电路器件，光学器件，微机械和机械精密器件的方法。 可以通过使用改进的组合物防止光致抗蚀剂的溶胀来避免图案塌陷。
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