公开(公告)号：US20200227275A1

公开(公告)日：2020-07-16

申请号：US16831251

申请日：2020-03-26

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Susmit Singha Roy ,  Yingli Rao ,  Regina Freed ,  Uday Mitra

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/02 ,  H01L21/306

Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.

公开(公告)号：US10510547B2

公开(公告)日：2019-12-17

申请号：US16120800

申请日：2018-09-04

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yingli Rao ,  Srinivas Gandikota

IPC: H01L21/285 ,  H01L21/321 ,  C23C16/34 ,  C23C16/06 ,  H01L27/115

Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.

公开(公告)号：US11702751B2

公开(公告)日：2023-07-18

申请号：US16989167

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： Bo Qi ,  Huiyuan Wang ,  Yingli Rao ,  Abhijit Basu Mallick

IPC: C23C16/30 ,  C23C16/56 ,  C23C16/455 ,  H10B12/00 ,  H10B41/20 ,  H10B41/35

CPC classification number: C23C16/56 ,  C23C16/30 ,  C23C16/45529 ,  H10B12/02 ,  H10B12/30 ,  H10B41/20 ,  H10B41/35

Abstract: A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.

公开(公告)号：US10998195B2

公开(公告)日：2021-05-04

申请号：US16682154

申请日：2019-11-13

Applicant: Applied Materials, Inc.

Inventor： Susmit Singha Roy ,  Yingli Rao ,  Srinivas Gandikota

IPC: H01L21/285 ,  H01L27/11578 ,  H01L21/321 ,  C23C16/34 ,  C23C16/06 ,  C23C28/00 ,  H01L21/3205 ,  C23C16/50 ,  C23C16/40 ,  C23C16/455 ,  H01L27/115

Abstract: Embodiments described herein relate to methods and materials for fabricating semiconductor device structures. In one example, a metal film stack includes a plurality of metal containing films and a plurality of metal derived films arranged in an alternating manner. In another example, a metal film stack includes a plurality of metal containing films which are modified into metal derived films. In certain embodiments, the metal film stacks are used in oxide/metal/oxide/metal (OMOM) structures for memory devices.

公开(公告)号：US11232955B2

公开(公告)日：2022-01-25

申请号：US16831251

申请日：2020-03-26

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Susmit Singha Roy ,  Yingli Rao ,  Regina Freed ,  Uday Mitra

IPC: H01L21/3213 ,  H01L21/311 ,  H01L21/02 ,  H01L21/306

Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.

公开(公告)号：US20210047733A1

公开(公告)日：2021-02-18

申请号：US16989167

申请日：2020-08-10

Applicant: Applied Materials, Inc.

Inventor： Bo Qi ,  Huiyuan Wang ,  Yingli Rao ,  Abhijit Basu Mallick

IPC: C23C16/56 ,  C23C16/30 ,  C23C16/455 ,  H01L27/11551 ,  H01L27/11524 ,  H01L27/108

Abstract: A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.

公开(公告)号：US20190189456A1

公开(公告)日：2019-06-20

申请号：US16219328

申请日：2018-12-13

Applicant: Applied Materials, Inc.

Inventor： Amrita B. Mullick ,  Abhijit Basu Mallick ,  Srinivas Gandikota ,  Susmit Singha Roy ,  Yingli Rao ,  Regina Freed ,  Uday Mitra

IPC: H01L21/306 ,  H01L21/02

CPC classification number: H01L21/306 ,  H01L21/02068

Abstract: Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.