-
公开(公告)号：US11232955B2
公开(公告)日：2022-01-25
申请号：US16831251
申请日：2020-03-26
发明人： Amrita B. Mullick , Abhijit Basu Mallick , Srinivas Gandikota , Susmit Singha Roy , Yingli Rao , Regina Freed , Uday Mitra
IPC分类号： H01L21/3213 , H01L21/311 , H01L21/02 , H01L21/306
摘要： Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
-
公开(公告)号：US20190189456A1
公开(公告)日：2019-06-20
申请号：US16219328
申请日：2018-12-13
发明人： Amrita B. Mullick , Abhijit Basu Mallick , Srinivas Gandikota , Susmit Singha Roy , Yingli Rao , Regina Freed , Uday Mitra
IPC分类号： H01L21/306 , H01L21/02
CPC分类号： H01L21/306 , H01L21/02068
摘要： Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
-
公开(公告)号：US11131015B2
公开(公告)日：2021-09-28
申请号：US16225240
申请日：2018-12-19
IPC分类号： H01L21/02 , H01L21/768 , C23C8/10 , C23C16/06 , C23C8/16 , C23C8/12 , H01L21/283 , H01L21/3105 , H01L21/762
摘要： Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.
-
公开(公告)号：US11515207B2
公开(公告)日：2022-11-29
申请号：US17512660
申请日：2021-10-27
IPC分类号： H01L21/3213 , C23C16/30 , C23C14/14 , C23C14/04 , C23C16/04 , C23C14/58 , H01L21/768 , C23C14/06 , H01L21/02 , H01L21/321
摘要： Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.
-
公开(公告)号：US20210404046A1
公开(公告)日：2021-12-30
申请号：US17473448
申请日：2021-09-13
IPC分类号： C23C8/10 , C23C16/06 , C23C8/16 , C23C8/12 , H01L21/02 , H01L21/283 , H01L21/3105 , H01L21/762 , H01L21/768
摘要： Methods of processing thin film by oxidation at high pressure are described. The methods are generally performed at pressures greater than 2 bar. The methods can be performed at lower temperatures and have shorter exposure times than similar methods performed at lower pressures. Some methods relate to oxidizing tungsten films to form self-aligned pillars.
-
公开(公告)号：US11189529B2
公开(公告)日：2021-11-30
申请号：US16294109
申请日：2019-03-06
IPC分类号： H01L21/768 , C23C16/30 , H01L21/321 , C23C14/14 , C23C14/04 , C23C16/04 , C23C14/58 , C23C14/06 , H01L21/02 , H01L21/3213
摘要： Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.
-
公开(公告)号：US20200279772A1
公开(公告)日：2020-09-03
申请号：US16647310
申请日：2018-09-14
IPC分类号： H01L21/768 , C23C16/04 , C23C16/44 , C23C16/42 , C23C16/56
摘要： Methods of producing a self-aligned structure are described. The methods comprise forming a metal-containing film in a substrate feature and silicidizing the metal-containing film to form a self-aligned structure comprising metal silicide. In some embodiments, the rate of formation of the self-aligned structure is controlled. In some embodiments, the amount of volumetric expansion of the metal-containing film to form the self-aligned structure is controlled. Methods of forming self-aligned vias are also described.
-
公开(公告)号：US11462438B2
公开(公告)日：2022-10-04
申请号：US16647310
申请日：2018-09-14
IPC分类号： H01L21/768 , C23C16/04 , C23C16/42 , C23C16/44 , C23C16/56
摘要： Methods of producing a self-aligned structure are described. The methods comprise forming a metal-containing film in a substrate feature and silicidizing the metal-containing film to form a self-aligned structure comprising metal silicide. In some embodiments, the rate of formation of the self-aligned structure is controlled. In some embodiments, the amount of volumetric expansion of the metal-containing film to form the self-aligned structure is controlled. Methods of forming self-aligned vias are also described.
-
公开(公告)号：US20200227275A1
公开(公告)日：2020-07-16
申请号：US16831251
申请日：2020-03-26
发明人： Amrita B. Mullick , Abhijit Basu Mallick , Srinivas Gandikota , Susmit Singha Roy , Yingli Rao , Regina Freed , Uday Mitra
IPC分类号： H01L21/3213 , H01L21/311 , H01L21/02 , H01L21/306
摘要： Processing methods to etch metal oxide films with less etch residue are described. The methods comprise etching a metal oxide film with a metal halide etchant, and exposing the etch residue to a reductant to remove the etch residue. Some embodiments relate to etching tungsten oxide films. Some embodiments utilize tungsten halides to etch metal oxide films. Some embodiments utilize hydrogen gas as a reductant to remove etch residues.
-
公开(公告)号：US20190279900A1
公开(公告)日：2019-09-12
申请号：US16294109
申请日：2019-03-06
IPC分类号： H01L21/768 , C23C16/30 , C23C14/06
摘要： Methods of producing a self-aligned structure comprising a metal chalcogenide are described. Some methods comprise forming a metal-containing film in a substrate feature and exposing the metal-containing film to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise forming a metal-containing film in a substrate feature, expanding the metal-containing film to form a pillar and exposing the pillar to a chalogen precursor to form a self-aligned structure comprising a metal chalcogenide. Some methods comprise directly forming a metal chalcogenide pillar in a substrate feature to form a self-aligned structure comprising a metal chalcogenide. Methods of forming self-aligned vias are also described.
-
-
-
-
-
-
-
-
-
搜索结果
11 条记录 (耗时 0.014 秒)
