公开(公告)号：US20240371771A1

公开(公告)日：2024-11-07

申请号：US18423437

申请日：2024-01-26

Applicant: Applied Materials, Inc.

Inventor： Sahil Jaykumar PATEL ,  Wei LEI ,  Tuerxun AILIHUMAER ,  Joung Joo LEE ,  Rongjun WANG ,  Xianmin TANG

IPC: H01L23/532 ,  H01L21/768

Abstract: Embodiments of the disclosure include an apparatus and method of forming a semiconductor structure that includes metal contacts with a low resistance. In some embodiments, the semiconductor device generally includes an interconnect. The interconnect generally includes a dielectric layer with a tungsten (W) plug formed therein, a feature formed in the dielectric layer and over the W plug, a liner layer formed on an exposed surface of the W plug and on sidewalls of the feature, an interruption layer formed on the liner layer, and a conductive material substantially filling the feature. The liner layer includes molybdenum (Mo) or W, and the interruption layer includes Mo.

公开(公告)号：US20240355673A1

公开(公告)日：2024-10-24

申请号：US18136970

申请日：2023-04-20

Applicant: Applied Materials, Inc.

Inventor： Wei LEI ,  Sahil PATEL ,  Yixiong YANG ,  Yu LEI ,  Shiyu YUE ,  Yi XU ,  Tuerxun AILIHUMAER ,  Juhyun OH ,  Xianmin TANG ,  Rongjun WANG

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76843 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53266 ,  C23C14/18 ,  H01L21/02063 ,  H01L21/28568

Abstract: Semiconductor devices and methods for molybdenum fill in semiconductor devices are provided. In one aspect, a method for processing a semiconductor device substrate is provided. The method includes exposing at least one feature formed in a dielectric layer to a grain modification layer deposition process to deposit a grain modification layer over at least a portion of the at least one feature. The at least one feature is defined by sidewall surfaces formed in the dielectric layer and a bottom surface extending between the sidewall surfaces. The method further includes exposing the at least one feature to a molybdenum deposition process to form a molybdenum-fill layer on the grain modification layer, wherein the grain modification layer comprises a metal different from molybdenum.