公开(公告)号：US10410889B2

公开(公告)日：2019-09-10

申请号：US14755646

申请日：2015-06-30

Applicant: APPLIED MATERIALS, INC.

Inventor： S. M. Reza Sadjadi ,  Haitao Wang ,  Jie Zhou ,  Tza-Jing Gung ,  Chunlei Zhang ,  Fernando M. Silveira

IPC: C23C16/00 ,  H01L21/67 ,  C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/505 ,  H01J37/32 ,  C23C16/52

Abstract: In some embodiments, a plasma processing apparatus includes a processing chamber to process a substrate; a mounting surface defined within the processing chamber to support a substrate disposed within the processing chamber; a showerhead disposed within the processing chamber and aligned so as to face the mounting surface, the showerhead defining a plurality of orifices to introduce a process gas into the processing chamber toward a substrate disposed within the processing chamber; and one or more magnets supported by the showerhead and arranged so that a radial component of a magnetic field applied by each of the one or more magnets has a higher flux density proximate a first region corresponding to an edge surface region of a substrate when disposed within the processing chamber than at a second region corresponding to an interior surface region of a substrate when disposed within the processing chamber.

公开(公告)号：US10177050B2

公开(公告)日：2019-01-08

申请号：US15212938

申请日：2016-07-18

Applicant: Applied Materials, Inc.

Inventor： S. M. Reza Sadjadi ,  Dmitry Lubomirsky ,  Hamid Noorbakhsh ,  John Zheng Ye ,  David H. Quach ,  Sean S. Kang

IPC: C23C14/54 ,  C23C16/458 ,  C23C16/509 ,  H01L21/66 ,  H01L21/02 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/687 ,  H01L21/67 ,  H01L21/683 ,  C23C14/22 ,  C23C16/44

Abstract: A dynamically tunable process kit, a processing chamber having a dynamically tunable process kit, and a method for processing a substrate using a dynamically tunable process kit are provided. The dynamically tunable process kit allows one or both of the electrical and thermal state of the process kit to be changed without changing the physical construction of the process kit, thereby allowing plasma properties, and hence processing results, to be easily changed without replacing the process kit. The processing chamber having a dynamically tunable process kit includes a chamber body that includes a portion of a conductive side wall configured to be electrically controlled, and a process kit. The processing chamber includes a first control system operable to control one or both of an electrical and thermal state of the process kit and a second control system operable to control an electrical state of the portion of the side wall.

公开(公告)号：US09412579B2

公开(公告)日：2016-08-09

申请号：US13766238

申请日：2013-02-13

Applicant: Applied Materials, Inc.

Inventor： S. M. Reza Sadjadi ,  Dmitry Lubomirsky ,  Hamid Noorbakhsh ,  John Zheng Ye ,  David H. Quach ,  Sean S. Kang

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L22/20 ,  C23C14/22 ,  C23C16/44 ,  H01J37/32082 ,  H01J37/32467 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32605 ,  H01J37/32642 ,  H01J37/32697 ,  H01J2237/334 ,  H01L21/02104 ,  H01L21/02274 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/6833 ,  H01L21/68735

Abstract: A dynamically tunable process kit, a processing chamber having a dynamically tunable process kit, and a method for processing a substrate using a dynamically tunable process kit are provided. The dynamically tunable process kit allows one or both of the electrical and thermal state of the process kit to be changed without changing the physical construction of the process kit, thereby allowing plasma properties, and hence processing results, to be easily changed without replacing the process kit. The processing chamber having a dynamically tunable process kit includes a chamber body that includes a portion of a conductive side wall configured to be electrically controlled, and a process kit. The processing chamber includes a first control system operable to control one or both of an electrical and thermal state of the process kit and a second control system operable to control an electrical state of the portion of the side wall.

Abstract translation: 提供了一种动态可调工艺套件，具有动态可调工艺套件的处理室以及使用动态可调工艺套件处理衬底的方法。 动态可调工艺套件可以改变工艺套件的电气和热态，而不改变工艺套件的物理结构，从而可以容易地改变等离子体性能，从而使处理结果更换，而无需更换过程 套件 具有可动态调节的处理套件的处理室包括腔室主体，其包括被配置为电控制的导电侧壁的一部分，以及处理套件。 处理室包括可操作以控制处理套件的电气和热状态中的一个或两个的第一控制系统和可操作以控制侧壁部分的电气状态的第二控制系统。