WAFER EDGE PROFILE CONTROL USING CONNECTED EDGE RING HARDWARE

    公开(公告)号:US20250014878A1

    公开(公告)日:2025-01-09

    申请号:US18218579

    申请日:2023-07-05

    Abstract: Embodiments described herein generally related to a substrate processing apparatus. In one embodiment, a process kit for a substrate processing chamber disclosed herein. The process kit includes a ring having a first ring component and a second ring component, a sliding ring, and an actuating mechanism. The first ring component is interfaced with the second ring component such that the second ring component is movable relative to the first ring component forming a gap therebetween. The sliding ring is positioned beneath the ring and contacts a bottom surface of the second ring component. A top surface of the sliding ring contacts the second ring component. The actuating mechanism is interfaced with the bottom surface of the sliding ring. The actuating mechanism is configured to actuate the sliding ring such that the gap between the first ring component and the second ring component varies.

    APPARATUS AND METHOD FOR CONTROLLING EDGE RING VARIATION

    公开(公告)号:US20210254957A1

    公开(公告)日:2021-08-19

    申请号:US17161271

    申请日:2021-01-28

    Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.

    ADJUSTABLE EDGE RING TILT FOR EDGE OF WAFER SKEW COMPENSATION

    公开(公告)号:US20240429089A1

    公开(公告)日:2024-12-26

    申请号:US18212672

    申请日:2023-06-21

    Abstract: Embodiments described herein generally related to a substrate processing chamber and a method of processing substrate in a processing chamber. In one embodiment, a method of using a process kit for a substrate processing chamber disclosed herein. The method begins by positioning the substrate on a substrate support disposed in the substrate processing chamber. A plasma is formed above the substrate and a tilt and height of an edge ring is adjusted with a controller. The controller is coupled to a movement assembly having one of three linear actuators for tilting a sliding ring interfaced with the edge ring to change a direction of ions at one edge of the substrate.

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