Embodiments described herein generally related to a substrate processing chamber and a method of processing substrate in a processing chamber. In one embodiment, a method of using a process kit for a substrate processing chamber disclosed herein. The method begins by positioning the substrate on a substrate support disposed in the substrate processing chamber. A plasma is formed above the substrate and a tilt and height of an edge ring is adjusted with a controller. The controller is coupled to a movement assembly having one of three linear actuators for tilting a sliding ring interfaced with the edge ring to change a direction of ions at one edge of the substrate.