公开(公告)号：US20210254957A1

公开(公告)日：2021-08-19

申请号：US17161271

申请日：2021-01-28

Applicant: Applied Materials, Inc.

Inventor： Sathyendra GHANTASALA ,  Leonid DORF ,  Evgeny KAMENETSKIY ,  Peter MURAOKA ,  Denis M. KOOSAU ,  Rajinder DHINDSA ,  Andreas SCHMID

IPC: G01B7/06 ,  H01L21/67 ,  H01L21/687 ,  H01J37/32

Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.

公开(公告)号：US20200006039A1

公开(公告)日：2020-01-02

申请号：US16023963

申请日：2018-06-29

Applicant: Applied Materials, Inc.

Inventor： Sathyendra GHANTASALA ,  Hyun-Ho DOH ,  Vijayakumar C. VENUGOPAL

IPC: H01J37/32

Abstract: Methods of operating and assembling a plasma chamber are disclosed. An operating method includes tuning a match network of a plasma chamber while running a non-plasma discharge recipe. A hardware impedance of the plasma chamber is calculated from the match network settings from the tuning. A match loss for the plasma chamber is also calculated according to match network settings. A radio frequency (RF) power setting for the first plasma chamber is set according to the calculated hardware impedance and the calculated match loss. Such methods can be utilized to provide chamber-to-chamber performance matching across different plasma chambers. Certain disclosed methods of operating the plasma chamber can be utilized to identify hardware faults during operation and/or assembly processes.

公开(公告)号：US20230280150A1

公开(公告)日：2023-09-07

申请号：US18317776

申请日：2023-05-15

Applicant: Applied Materials, Inc.

Inventor： Sathyendra GHANTASALA ,  Leonid DORF ,  Evgeny KAMENETSKIY ,  Peter MURAOKA ,  Denis Martin KOOSAU ,  Rajinder DHINDSA ,  Andreas SCHMID

IPC: G01B7/06 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

CPC classification number: G01B7/08 ,  H01L21/67069 ,  H01J37/32642 ,  H01L21/68721 ,  H01J2237/24564

Abstract: Disclosed herein is a method and apparatus for controlling surface characteristics by measuring capacitance of a process kit ring. The method includes interfacing a ring with a jig assembly for measuring capacitance in at least a first location of the ring. The ring has that includes a top surface, a bottom surface, and an inner surface opposite an outer surface. At least the bottom surface has an external coating placed thereon. The method further includes contacting a measuring device to the first location on the outer surface proximate the bottom surface. The measuring device contacts an opening in the external coating to the body. The measuring device contacts a first conductive member that is electrically coupled to the ring. A capacitance is measured on the measuring device. The capacitance across the top surface is measured.